Login or REGISTER
    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    FET, MOSFET Arrays

    制造商 Series Package/Case Packaging Part Status Technology Configuration Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs FET Feature Input Capacitance (Ciss) (Max) @ Vds Power - Max Supplier Device Package Operating Temperature Mounting Style Grade Qualification





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Part Status Technology Configuration Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs FET Feature Input Capacitance (Ciss) (Max) @ Vds Power - Max Supplier Device Package Operating Temperature Mounting Style Grade Qualification
    NXH007F120M3F2PTHG

    NXH007F120M3F2PTHG

    MOSFET 4N-CH 1200V 149A 34PIM

    onsemi

    6
    RFQ
    NXH007F120M3F2PTHG

    Datasheet

    - Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) 1200V (1.2kV) 149A (Tc) 10mOhm @ 120A, 18V 4.4V @ 60mA 407nC @ 18V Silicon Carbide (SiC) 9090pF @ 800V 353W (Tj) 34-PIM (56.7x42.5) -40°C ~ 175°C (TJ) Chassis Mount - -
    MSCSM170HRM451AG

    MSCSM170HRM451AG

    MOSFET 4N-CH 1700V/1200V 64A

    Microchip Technology

    10
    RFQ
    MSCSM170HRM451AG

    Datasheet

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) 1700V (1.7kV), 1200V (1.2kV) 64A (Tc), 89A (Tc) 45mOhm @ 30A, 20V, 31mOhm @ 40A, 20V 3.2V @ 2.5mA, 2.8V @ 3mA 178nC @ 20V, 232nC @ 20V - 3300pF @ 1000V, 3020pF @ 1000V 319W (Tc), 395W (Tc) - -40°C ~ 175°C (TJ) Chassis Mount - -
    NXH008T120M3F2PTHG

    NXH008T120M3F2PTHG

    MOSFET 4N-CH 1200V 129A 29PIM

    onsemi

    18
    RFQ
    NXH008T120M3F2PTHG

    Datasheet

    - Module Tray Active Silicon Carbide (SiC) 4 N-Channel 1200V (1.2kV) 129A (Tc) 11.5mOhm @ 100A, 18V 4.4V @ 60mA 454nC @ 20V - 9129pF @ 800V 371W (Tj) 29-PIM (56.7x42.5) -40°C ~ 175°C (TJ) Chassis Mount - -
    MSCSM120HRM311AG

    MSCSM120HRM311AG

    MOSFET 4N-CH 1200V/700V 89A

    Microchip Technology

    10
    RFQ
    MSCSM120HRM311AG

    Datasheet

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) 1200V (1.2kV), 700V 89A (Tc), 124A (Tc) 31mOhm @ 40A, 20V, 19mOhm @ 40A, 20V 2.8V @ 3mA, 2.4V @ 4mA 232nC @ 20V, 215nC @ 20V - 3020pF @ 1000V, 4500pF @ 700V 395W (Tc), 365W (Tc) - -40°C ~ 175°C (TJ) Chassis Mount - -
    FF6MR12W2M1HPB11BPSA1

    FF6MR12W2M1HPB11BPSA1

    MOSFET 2N-CH 1200V 200A MODULE

    Infineon Technologies

    18
    RFQ
    FF6MR12W2M1HPB11BPSA1

    Datasheet

    HEXFET® Module Tray Active Silicon Carbide (SiC) 2 N-Channel 1200V (1.2kV) 200A (Tj) 5.63mOhm @ 200A, 15V 5.55V @ 80mA 496nC @ 15V - 14700pF @ 800V - Module -40°C ~ 150°C (TJ) Chassis Mount - -
    FF6MR12W2M1HB11BPSA1

    FF6MR12W2M1HB11BPSA1

    MOSFET 2N-CH 1200V 145A MODULE

    Infineon Technologies

    18
    RFQ
    FF6MR12W2M1HB11BPSA1

    Datasheet

    CoolSiC™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) 1200V (1.2kV) 145A (Tj) 5.4mOhm @ 150A, 18V 5.15V @ 60mA 446nC @ 18V - 13200pF @ 800V - Module -40°C ~ 175°C (TJ) Chassis Mount - -
    GCMX005A120B3B1P

    GCMX005A120B3B1P

    MOSFET 4N-CH 1200V 383A

    SemiQ

    2
    RFQ
    GCMX005A120B3B1P

    Datasheet

    - Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Half Bridge) 1200V (1.2kV) 383A (Tc) 7mOhm @ 200A, 20V 4V @ 80mA 927nC @ 20V - 23500pF @ 800V 1.154kW (Tc) - -40°C ~ 175°C (TJ) Chassis Mount - -
    NXH004P120M3F2PNG

    NXH004P120M3F2PNG

    MOSFET 2N-CH 1200V 338A 36PIM

    onsemi

    20
    RFQ
    NXH004P120M3F2PNG

    Datasheet

    - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) 1200V (1.2kV) 338A (Tc) 5.5mOhm @ 200A, 18V 4.4V @ 120mA 876nC @ 20V Silicon Carbide (SiC) 16410pF @ 800V 1.098W (Tc) 36-PIM (56.7x62.8) -40°C ~ 175°C (TJ) Chassis Mount - -
    GCMX005A120S7B1

    GCMX005A120S7B1

    MOSFET 2N-CH 1200V 348A

    SemiQ

    20
    RFQ
    GCMX005A120S7B1

    Datasheet

    - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) 1200V (1.2kV) 348A (Tc) 7mOhm @ 200A, 20V 4V @ 80mA 978nC @ 20V - 29300pF @ 800V 1.042kW (Tc) - -40°C ~ 175°C (TJ) Chassis Mount - -
    FS13MR12W2M1HPB11BPSA1

    FS13MR12W2M1HPB11BPSA1

    MOSFET

    Infineon Technologies

    18
    RFQ
    FS13MR12W2M1HPB11BPSA1

    Datasheet

    - - Tray Active - - - - - - - - - - - - - - -
    CHB011M12GM4

    CHB011M12GM4

    SIC, MODULE, 11M, 1200V, 48 MM,

    Wolfspeed, Inc.

    18
    RFQ
    CHB011M12GM4

    Datasheet

    * - Box Active - - - - - - - - - - - - - - -
    CBB011M12GM4

    CBB011M12GM4

    SIC, MODULE, 11M, 1200V, 48 MM,

    Wolfspeed, Inc.

    16
    RFQ
    CBB011M12GM4

    Datasheet

    * - Box Active - - - - - - - - - - - - - - -
    CBB011M12GM4T

    CBB011M12GM4T

    SIC, MODULE, 11M, 1200V, 48 MM,

    Wolfspeed, Inc.

    8
    RFQ
    CBB011M12GM4T

    Datasheet

    * - Box Active - - - - - - - - - - - - - - -
    CHB011M12GM4T

    CHB011M12GM4T

    SIC, MODULE, 11M, 1200V, 48 MM,

    Wolfspeed, Inc.

    3
    RFQ
    CHB011M12GM4T

    Datasheet

    * - Box Active - - - - - - - - - - - - - - -
    CAB011A12GM3T

    CAB011A12GM3T

    MOSFET 2N-CH 1200V 141A MODULE

    Wolfspeed, Inc.

    5
    RFQ
    CAB011A12GM3T

    Datasheet

    - Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) 1200V (1.2kV) 141A (Tj) 13.9mOhm @ 150A, 15V 3.9V @ 34mA 354nC @ 15V - 11000pF @ 1000V 10mW Module -40°C ~ 150°C (TJ) Chassis Mount - -
    FF4MR12W2M1HPB11BPSA1

    FF4MR12W2M1HPB11BPSA1

    MOSFET 2N-CH 1200V AG-EASY2B

    Infineon Technologies

    17
    RFQ
    FF4MR12W2M1HPB11BPSA1

    Datasheet

    - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) 1200V (1.2kV) 170A 4mOhm @ 200A, 18V 5.15V @ 80mA 594nC @ 18V - 17600pF @ 800V 20mW AG-EASY2B -40°C ~ 175°C (TJ) Chassis Mount - -
    F411MR12W2M1HPB76BPSA1

    F411MR12W2M1HPB76BPSA1

    MOSFET

    Infineon Technologies

    9
    RFQ
    F411MR12W2M1HPB76BPSA1

    Datasheet

    - - Tray Active - - - - - - - - - - - - - - -
    FF6MR12KM1HPHPSA1

    FF6MR12KM1HPHPSA1

    MOSFET

    Infineon Technologies

    10
    RFQ
    FF6MR12KM1HPHPSA1

    Datasheet

    - - Tray Active - - - - - - - - - - - - - - -
    CAB004M12GM4

    CAB004M12GM4

    SIC, MODULE, 4M, 1200V, 48 MM, G

    Wolfspeed, Inc.

    18
    RFQ
    CAB004M12GM4

    Datasheet

    * - Box Active - - - - - - - - - - - - - - -
    CAB004M12GM4T

    CAB004M12GM4T

    SIC, MODULE, 4M, 1200V, 48 MM, G

    Wolfspeed, Inc.

    18
    RFQ
    CAB004M12GM4T

    Datasheet

    * - Box Active - - - - - - - - - - - - - - -
    Total 5737 Record«Prev1... 136137138139140141142143...287Next»
    Your email
    Your message
    KATY Electronic Technology Co., LTD

    HOME

    KATY Electronic Technology Co., LTD

    PRODUCT

    KATY Electronic Technology Co., LTD

    PHONE

    KATY Electronic Technology Co., LTD

    USER