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    FET, MOSFET Arrays

    制造商 Series Package/Case Packaging Part Status Technology Configuration Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs FET Feature Input Capacitance (Ciss) (Max) @ Vds Power - Max Supplier Device Package Operating Temperature Mounting Style Grade Qualification





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































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    Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Part Status Technology Configuration Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs FET Feature Input Capacitance (Ciss) (Max) @ Vds Power - Max Supplier Device Package Operating Temperature Mounting Style Grade Qualification
    MSCSM120DUM042AG

    MSCSM120DUM042AG

    MOSFET 2N-CH 1200V 495A

    Microchip Technology

    2
    RFQ

    -

    - Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source 1200V (1.2kV) 495A (Tc) 5.2mOhm @ 240A, 20V 2.8V @ 6mA 1392nC @ 20V - 18100pF @ 1000V 2031W (Tc) - -40°C ~ 175°C (TJ) Chassis Mount - -
    MSCSM170TAM23CTPAG

    MSCSM170TAM23CTPAG

    MOSFET 6N-CH 1700V 122A

    Microchip Technology

    3
    RFQ
    MSCSM170TAM23CTPAG

    Datasheet

    - Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (Phase Leg) 1700V (1.7kV) 122A (Tc) 22.5mOhm @ 60A, 20V 3.2V @ 5mA 356nC @ 20V - 6600pF @ 1000V 588W (Tc) - -40°C ~ 175°C (TJ) Chassis Mount - -
    MSCSM120AM042CT6LIAG

    MSCSM120AM042CT6LIAG

    MOSFET 2N-CH 1200V 495A SP6C LI

    Microchip Technology

    4
    RFQ
    MSCSM120AM042CT6LIAG

    Datasheet

    - Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) 1200V (1.2kV) 495A (Tc) 5.2mOhm @ 240A, 20V 2.8V @ 6mA 1392nC @ 20V - 18100pF @ 1kV 2.031kW (Tc) SP6C LI -40°C ~ 175°C (TJ) Chassis Mount - -
    MSCSM120AM042CD3AG

    MSCSM120AM042CD3AG

    MOSFET 2N-CH 1200V 495A D3

    Microchip Technology

    3
    RFQ
    MSCSM120AM042CD3AG

    Datasheet

    - Module Box Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) 1200V (1.2kV) 495A (Tc) 5.2mOhm @ 240A, 20V 2.8V @ 6mA 1392nC @ 20V - 18.1pF @ 1000V 2.031kW (Tc) D3 -40°C ~ 175°C (TJ) Chassis Mount - -
    MSCSM70TLM05CAG

    MSCSM70TLM05CAG

    MOSFET 4N-CH 700V 464A SP6C

    Microchip Technology

    7
    RFQ

    -

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) 700V 464A (Tc) 4.8mOhm @ 160A, 20V 2.4V @ 16mA 860nC @ 20V - 18000pF @ 700V 1277W (Tc) SP6C -40°C ~ 175°C (TJ) Chassis Mount - -
    MSCSM170HM12CAG

    MSCSM170HM12CAG

    MOSFET 4N-CH 1700V 179A

    Microchip Technology

    13
    RFQ
    MSCSM170HM12CAG

    Datasheet

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) 1700V (1.7kV) 179A (Tc) 15mOhm @ 90A, 20V 3.2V @ 7.5mA 534nC @ 20V - 9900pF @ 1000V 843W (Tc) - -40°C ~ 175°C (TJ) Chassis Mount - -
    MSCSM170AM058CT6AG

    MSCSM170AM058CT6AG

    MOSFET 2N-CH 1700V 353A

    Microchip Technology

    3
    RFQ
    MSCSM170AM058CT6AG

    Datasheet

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) 1700V (1.7kV) 353A (Tc) 7.5mOhm @ 180A, 20V 3.3V @ 15mA 1068nC @ 20V - 19800pF @ 1000V 1.642kW (Tc) - -40°C ~ 175°C (TJ) Chassis Mount - -
    MSCSM170TAM15CTPAG

    MSCSM170TAM15CTPAG

    MOSFET 6N-CH 1700V 179A

    Microchip Technology

    8
    RFQ
    MSCSM170TAM15CTPAG

    Datasheet

    - Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (Phase Leg) 1700V (1.7kV) 179A (Tc) 15mOhm @ 90A, 20V 3.2V @ 7.5mA 534nC @ 20V - 9900pF @ 1000V 843W (Tc) - -40°C ~ 175°C (TJ) Chassis Mount - -
    MSCSM120TAM11CTPAG

    MSCSM120TAM11CTPAG

    MOSFET 6N-CH 1200V 251A SP6-P

    Microchip Technology

    2
    RFQ
    MSCSM120TAM11CTPAG

    Datasheet

    - Module Tube Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) 1200V (1.2kV) 251A (Tc) 10.4mOhm @ 120A, 20V 2.8V @ 3mA 696nC @ 20V - 9060pF @ 1000V 1.042kW (Tc) SP6-P -40°C ~ 175°C (TJ) Chassis Mount - -
    MSCSM120AM03CT6LIAG

    MSCSM120AM03CT6LIAG

    MOSFET 2N-CH 1200V 805A SP6C LI

    Microchip Technology

    2
    RFQ
    MSCSM120AM03CT6LIAG

    Datasheet

    - Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) 1200V (1.2kV) 805A (Tc) 3.1mOhm @ 400A, 20V 2.8V @ 10mA 2320nC @ 20V - 30200pF @ 1kV 3.215kW (Tc) SP6C LI -40°C ~ 175°C (TJ) Chassis Mount - -
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