Login or REGISTER
    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    FET, MOSFET Arrays

    制造商 Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package
    MSCSM120HM16CTBL3NG

    MSCSM120HM16CTBL3NG

    MOSFET 4N-CH 1200V 150A

    Microchip Technology

    3,936
    RFQ
    MSCSM120HM16CTBL3NG

    Datasheet

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Phase Leg) - 1200V (1.2kV) 150A 16mOhm @ 80A, 20V 2.8V @ 2mA 464nC @ 20V 6040pF @ 1000V 560W -55°C ~ 175°C (TJ) - - Chassis Mount -
    PJT7808_R2_00001

    PJT7808_R2_00001

    MOSFET 2N-CH 20V 0.5A SOT363

    EMO Inc.

    4,808
    RFQ
    PJT7808_R2_00001

    Datasheet

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 500mA (Ta) 400mOhm @ 500mA, 4.5V 900mV @ 250µA 1.4nC @ 4.5V 67pF @ 10V 350mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
    FF1MR12KM1HP

    FF1MR12KM1HP

    MOSFET

    Infineon Technologies

    4,227
    RFQ

    -

    - - Tray Active - - - - - - - - - - - - - - -
    GE17045EEA3

    GE17045EEA3

    MOSFET 6N-CH 1700V 425A

    GE Aerospace

    4,715
    RFQ
    GE17045EEA3

    Datasheet

    SiC Power Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1700V (1.7kV) 425A (Tc) 4.45mOhm @ 425A, 20V 4.5V @ 160mA 1207nC @ 18V 29100pF @ 900V 1250W (Tc) -55°C ~ 150°C (Tc) - - Chassis Mount -
    MSCSM120HM16TBL3NG

    MSCSM120HM16TBL3NG

    MOSFET 6N-CH 1200V 150A

    Microchip Technology

    2,891
    RFQ
    MSCSM120HM16TBL3NG

    Datasheet

    - Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (Phase Leg) - 1200V (1.2kV) 150A 16mOhm @ 80A, 20V 2.8V @ 6mA 464nC @ 20V 6040pF @ 1000V 560W -55°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120DDUM16TBL3NG

    MSCSM120DDUM16TBL3NG

    MOSFET 4N-CH 1200V 150A

    Microchip Technology

    4,311
    RFQ
    MSCSM120DDUM16TBL3NG

    Datasheet

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel, Common Source - 1200V (1.2kV) 150A 16mOhm @ 80A, 20V 2.8V @ 6mA 464nC @ 20V 6040pF @ 1000V 560W -55°C ~ 175°C (TJ) - - Chassis Mount -
    DMN5L06VKQ-13

    DMN5L06VKQ-13

    MOSFET 2N-CH 50V 0.28A SOT563

    Diodes Incorporated

    4,884
    RFQ
    DMN5L06VKQ-13

    Datasheet

    - SOT-563, SOT-666 Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 50V 280mA (Ta) 2Ohm @ 50mA, 5V 1V @ 250µA - 50pF @ 25V 250mW -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount SOT-563
    IRF8910TRPBF-1

    IRF8910TRPBF-1

    MOSFET 2N-CH 20V 10A 8SO

    Infineon Technologies

    3,483
    RFQ

    -

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 10A (Ta) 13.4mOhm @ 10A, 10V 2.55V @ 250µA 11nC @ 4.5V 960pF @ 10V 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IPG20N06S2L65AAUMA1

    IPG20N06S2L65AAUMA1

    MOSFET 2N-CH 55V 20A 8TDSON

    Infineon Technologies

    3,763
    RFQ

    -

    OptiMOS™ 8-PowerVDFN Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 55V 20A (Tc) 65mOhm @ 15A, 10V 2V @ 14µA 12nC @ 10V 410pF @ 25V 43W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount, Wettable Flank PG-TDSON-8-10
    NTMFD0D9N02P1E

    NTMFD0D9N02P1E

    MOSFET 2N-CH 30V/25V 14A 8PQFN

    onsemi

    3,368
    RFQ
    NTMFD0D9N02P1E

    Datasheet

    - 8-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical - 30V, 25V 14A (Ta), 30A (Ta) 3mOhm @ 20A, 10V, 0.72mOhm @ 41A, 10V 2V @ 340µA, 2V @ 1mA 9nC, 30nC @ 4.5V 1400pF @ 15V, 5050pF @ 13V 960mW (Ta), 1.04W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
    GE12050EEA3

    GE12050EEA3

    MOSFET 6N-CH 1200V 475A MODULE

    GE Aerospace

    3,553
    RFQ
    GE12050EEA3

    Datasheet

    SiC Power Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 475A (Tc) 4.4mOhm @ 475A, 20V 4.5V @ 160mA 1248nC @ 18V 29300pF @ 600V 1250W (Tc) -55°C ~ 150°C (Tc) - - Chassis Mount Module
    GE17140CEA3

    GE17140CEA3

    MOSFET 2N-CH 1700V 1.275KA MODUL

    GE Aerospace

    2,657
    RFQ
    GE17140CEA3

    Datasheet

    SiC Power Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1700V (1.7kV) 1.275kA - 4.5V @ 480mA 3621nC @ 18V 82nF @ 600V 3.75kW -55°C ~ 150°C (Tc) - - Chassis Mount Module
    UM6K1N-TP

    UM6K1N-TP

    MOSFET 2N-CH 30V 0.1A SOT363

    Micro Commercial Co

    3,629
    RFQ
    UM6K1N-TP

    Datasheet

    - 6-TSSOP, SC-88, SOT-363 Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 100mA 8Ohm @ 10mA, 4V 1.5V @ 100µA - 13pF @ 5V 150mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
    2N7002DWL-TP

    2N7002DWL-TP

    MOSFET 2N-CH 60V 0.115A SOT23-6L

    Micro Commercial Co

    2,173
    RFQ
    2N7002DWL-TP

    Datasheet

    - SOT-23-6 Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 115mA 4.5Ohm @ 500mA, 10V 2.5V @ 250µA - 50pF @ 25V 225mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6L
    SIL6321-TP

    SIL6321-TP

    MOSFET N/P-CH 30V 1A SOT23-6L

    Micro Commercial Co

    3,980
    RFQ

    -

    - SOT-23-6 Bulk Obsolete MOSFET (Metal Oxide) N and P-Channel - 30V 1A 320mOhm @ 1A, 10V 1.4V @ 250µA, 1.3V @ 250µA - 1155pF @ 15V, 1050pF @ 15V 1W -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6L
    SI3139KDW-TP

    SI3139KDW-TP

    MOSFET 2P-CH 20V 0.66A SOT363

    Micro Commercial Co

    2,377
    RFQ

    -

    - 6-TSSOP, SC-88, SOT-363 Bulk Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) - 20V 660mA 520mOhm @ 1A, 4.5V 1.1V @ 250µA - 175pF @ 16V 150mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
    SIL3439K-TP

    SIL3439K-TP

    MOSFET N/P-CH 20V 1.3A SOT23-6L

    Micro Commercial Co

    3,949
    RFQ

    -

    - SOT-23-6 Bulk Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 1.3A, 1.1A 380mOhm @ 650mA, 4.5V, 520mOhm @ 1A, 4.5V 1.1V @ 250µA - 60pF @ 16V, 175pF @ 16V 1.25W -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6L
    TPC8228-H,LQ

    TPC8228-H,LQ

    MOSFET 2N-CH 60V 3.8A 8SOP

    Toshiba Semiconductor and Storage

    4,614
    RFQ
    TPC8228-H,LQ

    Datasheet

    U-MOSVI-H 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 3.8A 57mOhm @ 1.9A, 10V 2.3V @ 100µA 11nC @ 10V 640pF @ 10V 1.5W (Ta) 150°C - - Surface Mount 8-SOP
    TPC8227-H,LQ

    TPC8227-H,LQ

    MOSFET 2N-CH 40V 5.1A 8SOP

    Toshiba Semiconductor and Storage

    3,220
    RFQ
    TPC8227-H,LQ

    Datasheet

    U-MOSVI-H 8-SOIC (0.154", 3.90mm Width) Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 5.1A 33mOhm @ 2.6A, 10V 2.3V @ 100µA 10nC @ 10V 640pF @ 10V 1.5W (Ta) 150°C - - Surface Mount 8-SOP
    IPG20N06S2L65AUMA1

    IPG20N06S2L65AUMA1

    MOSFET

    Infineon Technologies

    3,259
    RFQ

    -

    - - Bulk Obsolete - - - - - - - - - - - - - - -
    Total 5737 Record«Prev1... 280281282283284285286287Next»
    Your email
    Your message
    KATY Electronic Technology Co., LTD

    HOME

    KATY Electronic Technology Co., LTD

    PRODUCT

    KATY Electronic Technology Co., LTD

    PHONE

    KATY Electronic Technology Co., LTD

    USER