制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
AUIRFS8408-7TRLMOSFET N-CH 40V 240A D2PAK Infineon Technologies |
700 | - |
|
![]() Datasheet |
HEXFET® | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 40 V | 240A (Tc) | 10V | 1mOhm @ 100A, 10V | 3.9V @ 250µA | 315 nC @ 10 V | ±20V | 10250 pF @ 25 V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-900 |
![]() |
IGLR60R260D1XUMA1GAN HV Infineon Technologies |
4,734 | - |
|
![]() Datasheet |
CoolGaN™ | 8-PowerTDFN | Tape & Reel (TR) | Last Time Buy | N-Channel | GaNFET (Gallium Nitride) | 600 V | 10.4A (Tc) | - | - | 1.6V @ 690µA | - | -10V | 110 pF @ 400 V | - | 52W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSON-8-7 |
|
IPZ60R037P7XKSA1MOSFET N-CH 650V 76A TO247-4 Infineon Technologies |
4,842 | - |
|
- |
CoolMOS™ P7 | TO-247-4 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 76A (Tc) | 10V | 37mOhm @ 29.5A, 10V | 4V @ 1.48mA | 121 nC @ 10 V | ±20V | 5243 pF @ 400 V | - | 255W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-4 |
![]() |
IAUS300N08S5N014ATMA1MOSFET N-CH 80V 300A HSOG-8 Infineon Technologies |
1,800 | - |
|
![]() Datasheet |
OptiMOS™ | 8-PowerSMD, Gull Wing | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 300A (Tc) | 6V, 10V | 1.4mOhm @ 100A, 10V | 3.8V @ 230µA | 187 nC @ 10 V | ±20V | 13178 pF @ 40 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HSOG-8-1 |
![]() |
IPB60R090CFD7ATMA1MOSFET N-CH 600V 25A TO263-3 Infineon Technologies |
1,154 | - |
|
![]() Datasheet |
CoolMOS™ CFD7 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 90mOhm @ 11.4A, 10V | 4.5V @ 570µA | 51 nC @ 10 V | ±20V | 2103 pF @ 400 V | - | 124W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
![]() |
SIPC69SN60C3X3SA1N-CHANNEL POWER MOSFET Infineon Technologies |
3,000 | - |
|
- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
![]() |
SIPC69SN60C3X2SA1N-CHANNEL POWER MOSFET Infineon Technologies |
4,407 | - |
|
- |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
![]() |
AUIRF7737L2TRMOSFET N-CH 40V 31A DIRECTFET Infineon Technologies |
7,373 | - |
|
![]() Datasheet |
HEXFET® | DirectFET™ Isometric L6 | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 40 V | 31A (Ta), 156A (Tc) | 10V | 1.9mOhm @ 94A, 10V | 4V @ 150µA | 134 nC @ 10 V | ±20V | 5469 pF @ 25 V | - | 3.3W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DIRECTFET L6 |
![]() |
AUIRF2804STRLMOSFET N-CH 40V 195A D2PAK Infineon Technologies |
599 | - |
|
![]() Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 10V | 2mOhm @ 75A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 6450 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
![]() |
IPB180N10S403ATMA1MOSFET N-CH 100V 180A TO263-7 Infineon Technologies |
1,144 | - |
|
![]() Datasheet |
OptiMOS™ | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 180A (Tc) | 10V | 3.3mOhm @ 100A, 10V | 3.5V @ 180µA | 140 nC @ 10 V | ±20V | 10120 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-7-3 |