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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPP60R520CPN-CHANNEL POWER MOSFET Infineon Technologies |
500 | - |
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Datasheet |
CoolMOS™ | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.8A (Tc) | 10V | 520mOhm @ 3.8A, 10V | 3.5V @ 250µA | 31 nC @ 10 V | ±20V | 630 pF @ 100 V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP50N10S3L16AKSA1MOSFET N-CH 100V 50A TO220-3 Infineon Technologies |
2,755 | - |
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Datasheet |
OptiMOS™ T | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 50A (Tc) | 4.5V, 10V | 15.7mOhm @ 50A, 10V | 2.4V @ 60µA | 64 nC @ 10 V | ±20V | 4180 pF @ 25 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPI80N06S207AKSA1MOSFET N-CH 55V 80A TO262-3 Infineon Technologies |
4,522 | - |
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Datasheet |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 6.6mOhm @ 68A, 10V | 4V @ 180µA | 110 nC @ 10 V | ±20V | 3400 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IPI052NE7N3GN-CHANNEL POWER MOSFET Infineon Technologies |
396 | - |
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Datasheet |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 80A (Tc) | 10V | 5.2mOhm @ 80A, 10V | 3.8V @ 91µA | 68 nC @ 10 V | ±20V | 4750 pF @ 37.5 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IPP057N06N3GXKSA1MOSFET N-CH 60V 80A TO220-3 Infineon Technologies |
3,342 | - |
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Datasheet |
OptiMOS™ | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 10V | 5.7mOhm @ 80A, 10V | 4V @ 58µA | 82 nC @ 10 V | ±20V | 6600 pF @ 30 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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SPB80N06SL2-7N-CHANNEL AUTOMOTIVE MOSFET Infineon Technologies |
600 | - |
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Datasheet |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 4.5V, 10V | 7mOhm @ 60A, 10V | 2V @ 150µA | 130 nC @ 10 V | ±20V | 3160 pF @ 25 V | - | 210W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IPDH6N03LAGMOSFET N-CH 25V 50A TO252-3 Infineon Technologies |
81 | - |
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Datasheet |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 50A (Tc) | 4.5V, 10V | 6mOhm @ 50A, 10V | 2V @ 30µA | 19 nC @ 5 V | ±20V | 2390 pF @ 15 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
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IPI100N04S3-03N-CHANNEL POWER MOSFET Infineon Technologies |
722 | - |
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Datasheet |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPB100N06S3-04MOSFET N-CH 55V 100A TO263-3 Infineon Technologies |
3,230 | - |
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Datasheet |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 100A (Tc) | 10V | 4.1mOhm @ 80A, 10V | 4V @ 150µA | 314 nC @ 10 V | ±20V | 14230 pF @ 25 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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SPU07N60C3BKMA1MOSFET N-CH 650V 7.3A TO251-3 Infineon Technologies |
4,952 | - |
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Datasheet |
CoolMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 7.3A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 3.9V @ 350µA | 27 nC @ 10 V | ±20V | 790 pF @ 25 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3-21 |
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