| 制造商 | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IMW65R060M2HXKSA1IMW65R060M2HXKSA1 Infineon Technologies |
3,661 | - |
|
Datasheet |
CoolSiC™ | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 32.8A (Tc) | 15V, 20V | 55mOhm @ 15.4A, 20V | Through Hole | 5.6V @ 3.1mA | 19 nC @ 18 V | 650 V | +23V, -7V | 669 pF @ 400 V | - | - | PG-TO247-3-40 | - | 130W (Tc) | -55°C ~ 175°C (TJ) |
|
IPZA60R045P7XKSA1MOSFET N-CH 650V 61A TO247-4-3 Infineon Technologies |
3,407 | - |
|
Datasheet |
CoolMOS™ P7 | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 61A (Tc) | 10V | 45mOhm @ 22.5A, 10V | Through Hole | 4V @ 1.08mA | 90 nC @ 10 V | 650 V | ±20V | 3891 pF @ 400 V | - | - | PG-TO247-4-3 | - | 201W (Tc) | -55°C ~ 150°C (TJ) |
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GS61008P-MRGS61008P-MR Infineon Technologies Canada Inc. |
4,997 | - |
|
- |
- | 5-SMD, No Lead | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 90A (Tc) | 6V | 9.5mOhm @ 27A, 6V | Surface Mount | 2.6V @ 7mA | 8 nC @ 6 V | 100 V | +7V, -10V | 600 pF @ 50 V | - | - | - | - | - | -55°C ~ 150°C |
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IMW65R040M2HXKSA1SILICON CARBIDE MOSFET Infineon Technologies |
8 | - |
|
Datasheet |
CoolSiC™ Gen 2 | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 46A (Tc) | 15V, 20V | 36mOhm @ 22.9A, 20V | Through Hole | 5.6V @ 4.6mA | 28 nC @ 18 V | 650 V | +23V, -7V | 997 pF @ 400 V | - | - | PG-TO247-3-40 | - | 172W (Tc) | -55°C ~ 175°C (TJ) |
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AIMZH120R120M1TXKSA1SIC_DISCRETE Infineon Technologies |
20 | - |
|
Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 22A (Tc) | 18V, 20V | 150mOhm @ 7A, 20V | Through Hole | 5.1V @ 2.2mA | 18 nC @ 20 V | 1200 V | +23V, -5V | 458 pF @ 800 V | AEC-Q101 | - | PG-TO247-4-11 | Automotive | 133W (Tc) | -55°C ~ 175°C (TJ) |
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IPT025N15NM6ATMA1TRENCH >=100V Infineon Technologies |
4,895 | - |
|
Datasheet |
OptiMOS™ 6 | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 26A (Ta), 263A (Tc) | 8V, 15V | 2.4mOhm @ 120A, 15V | Surface Mount | 4V @ 275µA | 137 nC @ 10 V | 150 V | ±20V | 9800 pF @ 75 V | - | - | PG-HSOF-8-1 | - | 3.8W (Ta), 395W (Tc) | -55°C ~ 175°C (TJ) |
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IPTG025N15NM6ATMA1TRENCH >=100V Infineon Technologies |
4,483 | - |
|
Datasheet |
OptiMOS™ 6 | 8-PowerSMD, Gull Wing | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 26A (Ta), 264A (Tc) | 8V, 15V | 2.4mOhm @ 120A, 15V | Surface Mount | 4V @ 275µA | 137 nC @ 10 V | 150 V | ±20V | 9800 pF @ 75 V | - | - | PG-HSOG-8-1 | - | 3.8W (Ta), 395W (Tc) | -55°C ~ 175°C (TJ) |
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IPTC025N15NM6ATMA1TRENCH >=100V Infineon Technologies |
4,824 | - |
|
Datasheet |
OptiMOS™ 6 | 16-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 26A (Ta), 264A (Tc) | 8V, 15V | 2.4mOhm @ 120A, 15V | Surface Mount | 4V @ 275µA | 137 nC @ 10 V | 150 V | ±20V | 9800 pF @ 75 V | - | - | PG-HDSOP-16-2 | - | 3.8W (Ta), 395W (Tc) | -55°C ~ 175°C (TJ) |
|
IMZC120R053M2HXKSA1IMZC120R053M2HXKSA1 Infineon Technologies |
3,509 | - |
|
Datasheet |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 38A (Tc) | 15V, 18V | 53mOhm @ 13A, 18V | Through Hole | 5.1V @ 4.1mA | 30 nC @ 18 V | 1200 V | +23V, -7V | 1010 pF @ 800 V | - | - | PG-TO247-4-17 | - | 182W (Tc) | -55°C ~ 175°C (TJ) |
|
IGLT65R055D2ATMA1IGLT65R055D2ATMA1 Infineon Technologies |
4,842 | - |
|
Datasheet |
CoolGaN™ | 16-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 31A (Tc) | - | - | Surface Mount | 1.6V @ 2.6mA | 4.7 nC @ 3 V | 650 V | -10V | 340 pF @ 400 V | - | - | PG-HDSOP-16-8 | - | 102W (Tc) | -55°C ~ 150°C (TJ) |





