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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF9952TRPBFXTMA1PLANAR 40<-<100V Infineon Technologies |
3,724 | - |
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- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPS70R900P7SAKMA1MOSFET N-CH 700V 6A TO251-3 Infineon Technologies |
4,824 | - |
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Datasheet |
CoolMOS™ P7 | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 6A (Tc) | 10V | 900mOhm @ 1.1A, 10V | Through Hole | 3.5V @ 60µA | 6.8 nC @ 10 V | 700 V | ±16V | 211 pF @ 400 V | - | - | PG-TO251-3 | - | 30.5W (Tc) | -40°C ~ 150°C (TJ) |
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BSS138N-E6327MOSFET N-CH 60V 230MA SOT23-3 Infineon Technologies |
4,868 | - |
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Datasheet |
SIPMOS® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 230mA (Ta) | 4.5V, 10V | 3.5Ohm @ 230mA, 10V | Surface Mount | 1.4V @ 250µA | 1.4 nC @ 10 V | 60 V | ±20V | 41 pF @ 25 V | - | - | PG-SOT23 | - | 360mW (Ta) | -55°C ~ 150°C (TJ) |
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BSS7728NH6327XTSA1MOSFET N-CH 60V 200MA SOT23-3 Infineon Technologies |
3,530 | - |
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Datasheet |
SIPMOS® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200mA (Ta) | 4.5V, 10V | 5Ohm @ 500mA, 10V | Surface Mount | 2.3V @ 26µA | 1.5 nC @ 10 V | 60 V | ±20V | 56 pF @ 25 V | - | - | PG-SOT23 | - | 360mW (Ta) | -55°C ~ 150°C (TJ) |
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IRF7324D1TRPBFMOSFET P-CH 20V 2.2A 8SO Infineon Technologies |
4,697 | - |
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Datasheet |
FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 2.2A (Ta) | 2.7V, 4.5V | 270mOhm @ 1.2A, 4.5V | Surface Mount | 700mV @ 250µA (Min) | 7.8 nC @ 4.5 V | 20 V | ±12V | 260 pF @ 15 V | - | Schottky Diode (Isolated) | 8-SO | - | 2W (Ta) | -55°C ~ 150°C (TJ) |
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SIPC03S2N03LX3MA1LV POWER MOS Infineon Technologies |
4,432 | - |
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Datasheet |
* | - | Tape & Reel (TR) | Not For New Designs | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRF9321TRPBFXTMA1TRENCH <= 40V Infineon Technologies |
2,774 | - |
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- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 15A (Ta) | 4.5V, 10V | 7.2mOhm @ 15A, 10V | Surface Mount | 2.4V @ 50µA | 98 nC @ 10 V | 30 V | ±20V | 2590 pF @ 25 V | - | - | 8-SOIC | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
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BSP316PE6327TMOSFET P-CH 100V 680MA SOT223-4 Infineon Technologies |
4,870 | - |
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Datasheet |
SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 680mA (Ta) | 4.5V, 10V | 1.8Ohm @ 680mA, 10V | Surface Mount | 2V @ 170µA | 6.4 nC @ 10 V | 100 V | ±20V | 146 pF @ 25 V | - | - | PG-SOT223-4 | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) |
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IPU075N03L GMOSFET N-CH 30V 50A TO251-3 Infineon Technologies |
3,365 | - |
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Datasheet |
OptiMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 4.5V, 10V | 7.5mOhm @ 30A, 10V | Through Hole | 2.2V @ 250µA | 18 nC @ 10 V | 30 V | ±20V | 1900 pF @ 15 V | - | - | PG-TO251-3-21 | - | 47W (Tc) | -55°C ~ 175°C (TJ) |
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IPC020N10L3X1SA1MOSFET N-CH 100V 1A SAWN ON FOIL Infineon Technologies |
2,240 | - |
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Datasheet |
OptiMOS™ | Die | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1A (Tj) | 4.5V | 100mOhm @ 2A, 4.5V | Surface Mount | 2.1V @ 12µA | - | 100 V | - | - | - | - | Sawn on foil | - | - | - |
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