| 制造商 | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPF10N03LA GMOSFET N-CH 25V 30A TO252-3 Infineon Technologies |
2,490 | - |
|
Datasheet |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 4.5V, 10V | 10.4mOhm @ 30A, 10V | Surface Mount | 2V @ 20µA | 11 nC @ 5 V | 25 V | ±20V | 1358 pF @ 15 V | - | - | PG-TO252-3-23 | - | 52W (Tc) | -55°C ~ 175°C (TJ) |
|
IPU78CN10N GMOSFET N-CH 100V 13A TO251-3 Infineon Technologies |
2,839 | - |
|
Datasheet |
OptiMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 13A (Tc) | 10V | 78mOhm @ 13A, 10V | Through Hole | 4V @ 12µA | 11 nC @ 10 V | 100 V | ±20V | 716 pF @ 50 V | - | - | PG-TO251-3 | - | 31W (Tc) | -55°C ~ 175°C (TJ) |
|
IPC045N10N3X1SA1MOSFET N-CH 100V 1A SAWN ON FOIL Infineon Technologies |
2,360 | - |
|
Datasheet |
OptiMOS™ | Die | Bulk | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 1A (Tj) | 10V | 100mOhm @ 2A, 10V | Surface Mount | 3.5V @ 33µA | - | 100 V | - | - | - | - | Sawn on foil | - | - | - |
|
IRF5804MOSFET P-CH 40V 2.5A MICRO6 Infineon Technologies |
3,404 | - |
|
Datasheet |
HEXFET® | SOT-23-6 Thin, TSOT-23-6 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 2.5A (Ta) | 4.5V, 10V | 198mOhm @ 2.5A, 10V | Surface Mount | 3V @ 250µA | 21 nC @ 10 V | 40 V | ±20V | 680 pF @ 25 V | - | - | Micro6™(TSOP-6) | - | 2W (Ta) | - |
|
SPD30N03S2L10TMOSFET N-CH 30V 30A TO252-3 Infineon Technologies |
3,381 | - |
|
Datasheet |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 4.5V, 10V | 10mOhm @ 30A, 10V | Surface Mount | 2V @ 50µA | 41.8 nC @ 10 V | 30 V | ±20V | 1550 pF @ 25 V | - | - | PG-TO252-3-11 | - | 100W (Tc) | -55°C ~ 175°C (TJ) |
|
IRFL1006TRMOSFET N-CH 60V 1.6A SOT223 Infineon Technologies |
4,869 | - |
|
Datasheet |
HEXFET® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1.6A (Ta) | 10V | 220mOhm @ 1.6A, 10V | Surface Mount | 4V @ 250µA | 8 nC @ 10 V | 60 V | ±20V | 160 pF @ 25 V | - | - | SOT-223 | - | 1W (Ta) | -55°C ~ 150°C (TJ) |
|
SPI10N10MOSFET N-CH 100V 10.3A TO262-3 Infineon Technologies |
4,663 | - |
|
Datasheet |
SIPMOS® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 10.3A (Tc) | 10V | 170mOhm @ 7.8A, 10V | Through Hole | 4V @ 21µA | 19.4 nC @ 10 V | 100 V | ±20V | 426 pF @ 25 V | - | - | PG-TO262-3-1 | - | 50W (Tc) | -55°C ~ 175°C (TJ) |
|
IPS80R1K4P7AKMA1MOSFET N-CH 800V 4A TO251-3 Infineon Technologies |
2,627 | - |
|
Datasheet |
CoolMOS™ | TO-251-3 Stub Leads, IPAK | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 4A (Tc) | 10V | 1.4Ohm @ 1.4A, 10V | Through Hole | 3.5V @ 700µA | 10 nC @ 10 V | 800 V | ±20V | - | - | - | PG-TO251-3-11 | - | 32W (Tc) | -55°C ~ 150°C (TJ) |
|
IPA60R1K5CEXKSA1MOSFET N-CH 600V 5A TO220 Infineon Technologies |
2,966 | - |
|
Datasheet |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 5A (Tc) | 10V | 1.5Ohm @ 1.1A, 10V | Through Hole | 3.5V @ 90µA | 9.4 nC @ 10 V | 600 V | ±20V | 200 pF @ 100 V | - | - | PG-TO220-FP | - | 20W (Tc) | -40°C ~ 150°C (TJ) |
|
IRFZ44ZPBFMOSFET N-CH 55V 51A TO220AB Infineon Technologies |
4,851 | - |
|
Datasheet |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 51A (Tc) | 10V | 13.9mOhm @ 31A, 10V | Through Hole | 4V @ 250µA | 43 nC @ 10 V | 55 V | ±20V | 1420 pF @ 25 V | - | - | TO-220AB | - | 80W (Tc) | -55°C ~ 175°C (TJ) |





