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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ISZ024N06NM6ATMA1TRENCH 40<-<100V Infineon Technologies |
2,169 | - |
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- | - | Tape & Reel (TR) | Discontinued at Digi-Key | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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SPP03N60C3HKSA1MOSFET N-CH 650V 3.2A TO220-3 Infineon Technologies |
4,477 | - |
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Datasheet |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 3.2A (Tc) | 10V | 1.4Ohm @ 2A, 10V | 3.9V @ 135µA | 17 nC @ 10 V | ±20V | 400 pF @ 25 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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BSB104N08NP3GXUMA3TRENCH 40<-<100V Infineon Technologies |
2,287 | - |
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Datasheet |
- | DirectFET™ Isometric MP | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 13A (Ta), 50A (Tc) | 10V | 10.4mOhm @ 10A, 10V | 3.5V @ 40µA | 31 nC @ 10 V | ±20V | 2100 pF @ 40 V | - | 2.8W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | MG-WDSON-2-6 |
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AUIRFU4292MOSFET N CH 250V 9.3A IPAK Infineon Technologies |
4,997 | - |
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Datasheet |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 9.3A (Tc) | 10V | 345mOhm @ 5.6A, 10V | 5V @ 50µA | 20 nC @ 10 V | ±20V | 705 pF @ 25 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
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IPA50R950CEMOSFET N-CH 500V 4.3A TO220-FP Infineon Technologies |
3,793 | - |
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Datasheet |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 4.3A (Tc) | 13V | 950mOhm @ 1.2A, 13V | 3.5V @ 100µA | 10.5 nC @ 10 V | ±20V | 231 pF @ 100 V | - | 25.7W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-31 |
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IRLR7811WCPBFMOSFET N-CH 30V 64A DPAK Infineon Technologies |
2,839 | - |
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Datasheet |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 64A (Tc) | 4.5V, 10V | 10.5mOhm @ 15A, 10V | 2.5V @ 250µA | 31 nC @ 4.5 V | ±12V | 2260 pF @ 15 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IPD640N06LGBTMA1MOSFET N-CH 60V 18A TO252-3 Infineon Technologies |
4,593 | - |
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Datasheet |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 18A (Tc) | 4.5V, 10V | 64mOhm @ 18A, 10V | 2V @ 16µA | 13 nC @ 10 V | ±20V | 470 pF @ 30 V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPP026N04NF2SAKMA1TRENCH PG-TO220-3 Infineon Technologies |
3,944 | - |
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Datasheet |
StrongIRFET™2 | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 29A (Ta), 121A (Tc) | 6V, 10V | 2.6mOhm @ 70A, 10V | 3.4V @ 81µA | 102 nC @ 10 V | ±20V | 4800 pF @ 20 V | - | 3.8W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-U05 |
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IPD16CN10N GMOSFET N-CH 100V 53A TO252-3 Infineon Technologies |
2,060 | - |
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Datasheet |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 53A (Tc) | 10V | 16mOhm @ 53A, 10V | 4V @ 61µA | 48 nC @ 10 V | ±20V | 3220 pF @ 50 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IRFR220NTRMOSFET N-CH 200V 5A DPAK Infineon Technologies |
4,907 | - |
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Datasheet |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 5A (Tc) | 10V | 600mOhm @ 2.9A, 10V | 4V @ 250µA | 23 nC @ 10 V | ±20V | 300 pF @ 25 V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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