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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF7834TRMOSFET N-CH 30V 19A 8SO Infineon Technologies |
4,836 | - |
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Datasheet |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 19A (Ta) | 4.5V, 10V | 4.5mOhm @ 19A, 10V | Surface Mount | 2.25V @ 250µA | 44 nC @ 4.5 V | 30 V | ±20V | 3710 pF @ 15 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
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IRFZ24NSTRLMOSFET N-CH 55V 17A D2PAK Infineon Technologies |
2,107 | - |
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Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 17A (Tc) | 10V | 70mOhm @ 10A, 10V | Surface Mount | 4V @ 250µA | 20 nC @ 10 V | 55 V | ±20V | 370 pF @ 25 V | - | - | D2PAK | - | 3.8W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) |
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AUIRFR8403TRLARMA1MOSFET_(20V 40V) Infineon Technologies |
3,030 | - |
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HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 10V | 3.1mOhm @ 76A, 10V | Surface Mount | 3.9V @ 100µA | 99 nC @ 10 V | 40 V | ±20V | 3171 pF @ 25 V | AEC-Q100 | - | PG-TO252-3-901|DPAK | Automotive | 99W (Tc) | -55°C ~ 175°C (TJ) |
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IRFR3910TRRMOSFET N-CH 100V 16A DPAK Infineon Technologies |
3,828 | - |
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Datasheet |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 16A (Tc) | 10V | 115mOhm @ 10A, 10V | Surface Mount | 4V @ 250µA | 44 nC @ 10 V | 100 V | ±20V | 640 pF @ 25 V | - | - | TO-252AA (DPAK) | - | 79W (Tc) | -55°C ~ 175°C (TJ) |
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IRF7203TRMOSFET P-CH 20V 4.3A 8SO Infineon Technologies |
2,048 | - |
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Datasheet |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 4.3A (Ta) | - | 100mOhm @ 2A, 10V | Surface Mount | - | 40 nC @ 10 V | 20 V | - | 750 pF @ 20 V | - | - | 8-SO | - | - | - |
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IRLU7821MOSFET N-CH 30V 65A I-PAK Infineon Technologies |
2,651 | - |
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Datasheet |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 65A (Tc) | 4.5V, 10V | 10mOhm @ 15A, 10V | Through Hole | 1V @ 250µA | 14 nC @ 4.5 V | 30 V | ±20V | 1030 pF @ 15 V | - | - | IPAK | - | 75W (Tc) | -55°C ~ 175°C (TJ) |
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ISZ022N06LM6ATMA1TRENCH 40<-<100V Infineon Technologies |
2,977 | - |
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- | - | Tape & Reel (TR) | Discontinued at Digi-Key | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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SPA04N80C3XKSA1MOSFET N-CH 800V 4A TO220-FP Infineon Technologies |
4,934 | - |
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Datasheet |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4A (Tc) | 10V | 1.3Ohm @ 2.5A, 10V | Through Hole | 3.9V @ 240µA | 31 nC @ 10 V | 800 V | ±20V | 570 pF @ 100 V | - | - | PG-TO220-3-31 | - | 38W (Tc) | -55°C ~ 150°C (TJ) |
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IRF3711STRLPBFMOSFET N-CH 20V 110A D2PAK Infineon Technologies |
3,885 | - |
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Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 110A (Tc) | 4.5V, 10V | 6mOhm @ 15A, 10V | Surface Mount | 3V @ 250µA | 44 nC @ 4.5 V | 20 V | ±20V | 2980 pF @ 10 V | - | - | D2PAK | - | 3.1W (Ta), 120W (Tc) | -55°C ~ 150°C (TJ) |
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IRF520NMOSFET N-CH 100V 9.7A TO220AB Infineon Technologies |
3,214 | - |
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Datasheet |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 9.7A (Tc) | 10V | 200mOhm @ 5.7A, 10V | Through Hole | 4V @ 250µA | 25 nC @ 10 V | 100 V | ±20V | 330 pF @ 25 V | - | - | TO-220AB | - | 48W (Tc) | -55°C ~ 175°C (TJ) |
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