制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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IRFZ44ESTRRMOSFET N-CH 60V 48A D2PAK Infineon Technologies |
4,420 | - |
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![]() Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 48A (Tc) | 10V | 23mOhm @ 29A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 1360 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRFZ44ESTRLMOSFET N-CH 60V 48A D2PAK Infineon Technologies |
4,815 | - |
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![]() Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 48A (Tc) | 10V | 23mOhm @ 29A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 1360 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRF7433MOSFET P-CH 12V 8.9A 8SO Infineon Technologies |
4,642 | - |
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HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12 V | 8.9A (Ta) | 1.8V, 4.5V | 24mOhm @ 8.7A, 4.5V | 900mV @ 250µA | 20 nC @ 4.5 V | ±8V | 1877 pF @ 10 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRF3709SMOSFET N-CH 30V 90A D2PAK Infineon Technologies |
4,361 | - |
|
![]() Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 90A (Tc) | 4.5V, 10V | 9mOhm @ 15A, 10V | 3V @ 250µA | 41 nC @ 5 V | ±20V | 2672 pF @ 16 V | - | 3.1W (Ta), 120W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D2PAK |
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IRL2203NSTRRPBFMOSFET N-CH 30V 116A D2PAK Infineon Technologies |
2,322 | - |
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HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 116A (Tc) | 4.5V, 10V | 7mOhm @ 60A, 10V | 3V @ 250µA | 60 nC @ 4.5 V | ±16V | 3290 pF @ 25 V | - | 3.8W (Ta), 180W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRFR3910CPBFMOSFET N-CH 100V 16A DPAK Infineon Technologies |
3,969 | - |
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HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 16A (Tc) | 10V | 115mOhm @ 10A, 10V | 4V @ 250µA | 44 nC @ 10 V | ±20V | 640 pF @ 25 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IRF6665TR1MOSFET N-CH 100V 4.2A DIRECTFET Infineon Technologies |
2,788 | - |
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- | DirectFET™ Isometric SH | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 4.2A (Ta), 19A (Tc) | 10V | 62mOhm @ 5A, 10V | 5V @ 250µA | 13 nC @ 10 V | ±20V | 530 pF @ 25 V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ SH |
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IPB80P03P4L07ATMA1MOSFET P-CH 30V 80A TO263-3 Infineon Technologies |
3,069 | - |
|
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OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 6.9mOhm @ 80A, 10V | 2V @ 130µA | 80 nC @ 10 V | +5V, -16V | 5700 pF @ 25 V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IPA65R280C6XKSA1MOSFET N-CH 650V 13.8A TO220 Infineon Technologies |
2,710 | - |
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CoolMOS™ | TO-220-3 Full Pack | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 13.8A (Tc) | 10V | 280mOhm @ 4.4A, 10V | 3.5V @ 440µA | 45 nC @ 10 V | ±20V | 950 pF @ 100 V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-111 |
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IPP80R360P7XKSA1MOSFET N-CH 800V 13A TO220-3 Infineon Technologies |
2,451 | - |
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CoolMOS™ P7 | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 13A (Tc) | 10V | 360mOhm @ 5.6A, 10V | 3.5V @ 280µA | 30 nC @ 10 V | ±20V | 930 pF @ 500 V | - | 84W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |