| 制造商 | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
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IRF2805STRRPBFMOSFET N-CH 55V 135A D2PAK Infineon Technologies |
3,102 | - |
|
Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 135A (Tc) | 10V | 4.7mOhm @ 104A, 10V | Surface Mount | 4V @ 250µA | 230 nC @ 10 V | 55 V | ±20V | 5110 pF @ 25 V | - | - | D2PAK | - | 200W (Tc) | -55°C ~ 175°C (TJ) |
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IRFSL4410ZPBFMOSFET N-CH 100V 97A TO262 Infineon Technologies |
2,825 | - |
|
Datasheet |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 97A (Tc) | 10V | 9mOhm @ 58A, 10V | Through Hole | 4V @ 150µA | 120 nC @ 10 V | 100 V | ±20V | 4820 pF @ 50 V | - | - | TO-262 | - | 230W (Tc) | -55°C ~ 175°C (TJ) |
|
IRFU2905ZMOSFET N-CH 55V 42A IPAK Infineon Technologies |
4,095 | - |
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Datasheet |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 42A (Tc) | 10V | 14.5mOhm @ 36A, 10V | Through Hole | 4V @ 250µA | 44 nC @ 10 V | 55 V | ±20V | 1380 pF @ 25 V | - | - | IPAK (TO-251AA) | - | 110W (Tc) | -55°C ~ 175°C (TJ) |
|
SPB100N03S2-03 GMOSFET N-CH 30V 100A TO263-3 Infineon Technologies |
4,000 | - |
|
Datasheet |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 10V | 3mOhm @ 80A, 10V | Surface Mount | 4V @ 250µA | 150 nC @ 10 V | 30 V | ±20V | 7020 pF @ 25 V | - | - | PG-TO263-3-2 | - | 300W (Tc) | -55°C ~ 175°C (TJ) |
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IPI100P03P3L-04MOSFET P-CH 30V 100A TO262-3 Infineon Technologies |
2,675 | - |
|
Datasheet |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 4.5V, 10V | 4.3mOhm @ 80A, 10V | Through Hole | 2.1V @ 475µA | 200 nC @ 10 V | 30 V | +5V, -16V | 9300 pF @ 25 V | - | - | PG-TO262-3 | - | 200W (Tc) | -55°C ~ 175°C (TJ) |
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IRF540ZSTRLMOSFET N-CH 100V 36A D2PAK Infineon Technologies |
2,059 | - |
|
Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 36A (Tc) | 10V | 26.5mOhm @ 22A, 10V | Surface Mount | 4V @ 250µA | 63 nC @ 10 V | 100 V | ±20V | 1770 pF @ 25 V | - | - | D2PAK | - | 92W (Tc) | -55°C ~ 175°C (TJ) |
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IRF3709MOSFET N-CH 30V 90A TO220AB Infineon Technologies |
2,922 | - |
|
Datasheet |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 90A (Tc) | 4.5V, 10V | 9mOhm @ 15A, 10V | Through Hole | 3V @ 250µA | 41 nC @ 5 V | 30 V | ±20V | 2672 pF @ 16 V | - | - | TO-220AB | - | 3.1W (Ta), 120W (Tc) | -55°C ~ 150°C (TJ) |
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IRLB4030PBFXKMA1TRENCH >=100V Infineon Technologies |
3,549 | - |
|
- |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 180A (Tc) | 4.5V, 10V | 4.3mOhm @ 110A, 10V | Through Hole | 2.5V @ 250µA | 130 nC @ 4.5 V | 100 V | ±16V | 11360 pF @ 50 V | - | - | TO-220AB | - | 370W (Tc) | -55°C ~ 175°C (TJ) |
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IPB80P04P405ATMA1MOSFET P-CH 40V 80A TO263-3 Infineon Technologies |
3,981 | - |
|
Datasheet |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 10V | 4.9mOhm @ 80A, 10V | Surface Mount | 4V @ 250µA | 151 nC @ 10 V | 40 V | ±20V | 10300 pF @ 25 V | AEC-Q101 | - | PG-TO263-3-2 | Automotive | 125W (Tc) | -55°C ~ 175°C (TJ) |
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IPB80P04P4L04ATMA1MOSFET P-CH 40V 80A TO263-3 Infineon Technologies |
4,255 | - |
|
Datasheet |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 4.5V, 10V | 4.4mOhm @ 80A, 10V | Surface Mount | 2.2V @ 250µA | 176 nC @ 10 V | 40 V | ±16V | 3800 pF @ 25 V | AEC-Q101 | - | PG-TO263-3-2 | Automotive | 125W (Tc) | -55°C ~ 175°C (TJ) |





