制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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IRLH5034TRPBFMOSFET N-CH 40V 29A/100A 8PQFN Infineon Technologies |
3,301 | - |
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![]() Datasheet |
HEXFET® | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 29A (Ta), 100A (Tc) | 4.5V, 10V | 2.4mOhm @ 50A, 10V | 2.5V @ 150µA | 82 nC @ 10 V | ±16V | 4730 pF @ 25 V | - | 3.6W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
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IPD60R450E6ATMA1MOSFET N-CH 600V 9.2A TO252-3 Infineon Technologies |
3,508 | - |
|
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CoolMOS™ E6 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 9.2A (Tc) | 10V | 450mOhm @ 3.4A, 10V | 3.5V @ 280µA | 28 nC @ 10 V | ±20V | 620 pF @ 100 V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IRFZ46ZSMOSFET N-CH 55V 51A D2PAK Infineon Technologies |
4,312 | - |
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HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 51A (Tc) | 10V | 13.6mOhm @ 31A, 10V | 4V @ 250µA | 46 nC @ 10 V | ±20V | 1460 pF @ 25 V | - | 82W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRF9Z24NSMOSFET P-CH 55V 12A D2PAK Infineon Technologies |
3,637 | - |
|
![]() Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 55 V | 12A (Tc) | 10V | 175mOhm @ 7.2A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 3.8W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRF9520NLMOSFET P-CH 100V 6.8A TO262 Infineon Technologies |
4,611 | - |
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HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 6.8A (Tc) | 10V | 480mOhm @ 4A, 10V | 4V @ 250µA | 27 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 3.8W (Ta), 48W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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IRF9Z24NLMOSFET P-CH 55V 12A TO262 Infineon Technologies |
4,142 | - |
|
![]() Datasheet |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 55 V | 12A (Tc) | 10V | 175mOhm @ 7.2A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 3.8W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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IRFR3711MOSFET N-CH 20V 100A DPAK Infineon Technologies |
3,962 | - |
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HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 100A (Tc) | 4.5V, 10V | 6.5mOhm @ 15A, 10V | 3V @ 250µA | 44 nC @ 4.5 V | ±20V | 2980 pF @ 10 V | - | 2.5W (Ta), 120W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IRF7822TRPBFMOSFET N-CH 30V 18A 8SO Infineon Technologies |
2,004 | - |
|
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HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 18A (Ta) | 4.5V | 6.5mOhm @ 15A, 4.5V | 1V @ 250µA | 60 nC @ 5 V | ±12V | 5500 pF @ 16 V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRF7452QTRPBFMOSFET N-CH 100V 4.5A 8-SOIC Infineon Technologies |
4,488 | - |
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- | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 4.5A (Ta) | - | 60mOhm @ 2.7A, 10V | 5.5V @ 250µA | 50 nC @ 10 V | - | 930 pF @ 25 V | - | - | - | - | - | Surface Mount | 8-SO |
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IRFH5306TR2PBFMOSFET N-CH 30V 15A 5X6 PQFN Infineon Technologies |
4,067 | - |
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![]() Datasheet |
- | 8-PowerVDFN | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 15A (Ta), 44A (Tc) | - | 8.1mOhm @ 15A, 10V | 2.35V @ 25µA | 12 nC @ 4.5 V | - | 1125 pF @ 15 V | - | - | - | - | - | Surface Mount | PQFN (5x6) Single Die |