制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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IRFR3505TRPBFMOSFET N-CH 55V 30A DPAK Infineon Technologies |
2,666 | - |
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![]() Datasheet |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 30A (Tc) | 10V | 13mOhm @ 30A, 10V | 4V @ 250µA | 93 nC @ 10 V | ±20V | 2030 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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BSZ023N04LSATMA1MOSFET N-CH 40V 22A/40A TSDSON Infineon Technologies |
4,838 | - |
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![]() Datasheet |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 22A (Ta), 40A (Tc) | 4.5V, 10V | 2.35mOhm @ 20A, 10V | 2V @ 250µA | 37 nC @ 10 V | ±20V | 2630 pF @ 20 V | - | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSDSON-8-FL |
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SPP80N03S2L-03MOSFET N-CH 30V 80A TO220-3 Infineon Technologies |
3,263 | - |
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![]() Datasheet |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 3.1mOhm @ 80A, 10V | 2V @ 250µA | 220 nC @ 10 V | ±20V | 8180 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IRF7450MOSFET N-CH 200V 2.5A 8SO Infineon Technologies |
2,144 | - |
|
![]() Datasheet |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 2.5A (Ta) | 10V | 170mOhm @ 1.5A, 10V | 5.5V @ 250µA | 39 nC @ 10 V | ±30V | 940 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRF9540NSTRRPBFMOSFET P-CH 100V 23A D2PAK Infineon Technologies |
2,171 | - |
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HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 23A (Tc) | 10V | 117mOhm @ 14A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 1450 pF @ 25 V | - | 3.1W (Ta), 110W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D2PAK |
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IPB60R600C6ATMA1MOSFET N-CH 600V 7.3A D2PAK Infineon Technologies |
3,855 | - |
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![]() Datasheet |
CoolMOS™ C6 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 7.3A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5 nC @ 10 V | ±20V | 440 pF @ 100 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IRFR7740TRPBFMOSFET N-CH 75V 87A DPAK Infineon Technologies |
4,232 | - |
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HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 87A (Tc) | 6V, 10V | 7.2mOhm @ 52A, 10V | 3.7V @ 100µA | 126 nC @ 10 V | ±20V | 4430 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPI600N25N3GAKSA1MOSFET N-CH 250V 25A TO262-3 Infineon Technologies |
4,930 | - |
|
![]() Datasheet |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 25A (Tc) | 10V | 60mOhm @ 25A, 10V | 4V @ 90µA | 29 nC @ 10 V | ±20V | 2350 pF @ 100 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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64-0007MOSFET N-CH 200V 18A TO220AB Infineon Technologies |
3,108 | - |
|
![]() Datasheet |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 18A (Tc) | 10V | 150mOhm @ 11A, 10V | 4V @ 250µA | 67 nC @ 10 V | ±20V | 1160 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRF1010EZMOSFET N-CH 60V 75A TO220AB Infineon Technologies |
2,343 | - |
|
![]() Datasheet |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 75A (Tc) | 10V | 8.5mOhm @ 51A, 10V | 4V @ 100µA | 86 nC @ 10 V | ±20V | 2810 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |