制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
GS-065-008-6-L-TRGS-065-008-6-L-TR Infineon Technologies Canada Inc. |
2,926 | - |
|
- |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 700 V | 8.8A (Tc) | 6V | 235mOhm @ 2.2A, 6V | 2.6V @ 1.7mA | 1.6 nC @ 6 V | +7V, -10V | 54 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PDFN (5x6) |
![]() |
IRL3102MOSFET N-CH 20V 61A TO220AB Infineon Technologies |
2,208 | - |
|
![]() Datasheet |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 61A (Tc) | 4.5V, 7V | 13mOhm @ 37A, 7V | 700mV @ 250µA (Min) | 58 nC @ 4.5 V | ±10V | 2500 pF @ 15 V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
![]() |
IRFHM830TR2PBFMOSFET N-CH 30V 21A PQFN Infineon Technologies |
2,744 | - |
|
![]() Datasheet |
- | 8-VQFN Exposed Pad | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 21A (Ta), 40A (Tc) | - | 3.8mOhm @ 20A, 10V | 2.35V @ 50µA | 31 nC @ 10 V | - | 2155 pF @ 25 V | - | - | - | - | - | Surface Mount | PQFN (3x3) |
![]() |
94-2989MOSFET N-CH 55V 64A D2PAK Infineon Technologies |
2,978 | - |
|
![]() Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 64A (Tc) | 10V | 14mOhm @ 32A, 10V | 4V @ 250µA | 81 nC @ 10 V | ±20V | 1970 pF @ 25 V | - | 3.8W (Ta), 130W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
![]() |
IRLR8103TRMOSFET N-CH 30V 89A DPAK Infineon Technologies |
4,277 | - |
|
![]() Datasheet |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 89A (Ta) | 4.5V, 10V | 7mOhm @ 15A, 10V | 2V @ 250µA (Min) | 50 nC @ 5 V | ±20V | - | - | 89W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
![]() |
IRF6618MOSFET N-CH 30V 30A DIRECTFET Infineon Technologies |
2,959 | - |
|
![]() Datasheet |
HEXFET® | DirectFET™ Isometric MT | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Ta), 170A (Tc) | 4.5V, 10V | 2.2mOhm @ 30A, 10V | 2.35V @ 250µA | 65 nC @ 4.5 V | ±20V | 5640 pF @ 15 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MT |
![]() |
IRF6635MOSFET N-CH 30V 32A DIRECTFET Infineon Technologies |
2,963 | - |
|
![]() Datasheet |
HEXFET® | DirectFET™ Isometric MX | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 32A (Ta), 180A (Tc) | 4.5V, 10V | 1.8mOhm @ 32A, 10V | 2.35V @ 250µA | 71 nC @ 4.5 V | ±20V | 5970 pF @ 15 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MX |
![]() |
IRF2907ZLPBFMOSFET N-CH 75V 160A TO262 Infineon Technologies |
3,939 | - |
|
![]() Datasheet |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 160A (Tc) | 10V | 4.5mOhm @ 75A, 10V | 4V @ 250µA | 270 nC @ 10 V | ±20V | 7500 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
![]() |
IRF7457MOSFET N-CH 20V 15A 8SO Infineon Technologies |
4,397 | - |
|
![]() Datasheet |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 15A (Ta) | 4.5V, 10V | 7mOhm @ 15A, 10V | 3V @ 250µA | 42 nC @ 4.5 V | ±20V | 3100 pF @ 10 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
![]() |
IPB085N06L GMOSFET N-CH 60V 80A TO-263 Infineon Technologies |
3,993 | - |
|
![]() Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | - | 8.2mOhm @ 80A, 10V | 2V @ 125µA | 104 nC @ 10 V | - | 3500 pF @ 30 V | - | - | - | - | - | Surface Mount | PG-TO263-3-2 |