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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFP4127PBFAKMA1TRENCH >=100V Infineon Technologies |
4,762 | - |
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- | TO-247-3 | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 75A (Tc) | 10V | 21mOhm @ 44A, 10V | Through Hole | 5V @ 250µA | 150 nC @ 10 V | 200 V | ±20V | 5380 pF @ 50 V | - | - | TO-247AC | - | 341W (Tc) | -55°C ~ 175°C (TJ) |
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IPP030N10N3GHKSA1MOSFET N-CH 100V 100A TO220-3 Infineon Technologies |
4,810 | - |
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Datasheet |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 6V, 10V | 3mOhm @ 100A, 10V | Through Hole | 3.5V @ 275µA | 206 nC @ 10 V | 100 V | ±20V | 14800 pF @ 50 V | - | - | PG-TO220-3 | - | 300W (Tc) | -55°C ~ 175°C (TJ) |
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IRFB3507MOSFET N-CH 75V 97A TO220AB Infineon Technologies |
3,928 | - |
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Datasheet |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 97A (Tc) | 10V | 8.8mOhm @ 58A, 10V | Through Hole | 4V @ 100µA | 130 nC @ 10 V | 75 V | ±20V | 3540 pF @ 50 V | - | - | TO-220AB | - | 190W (Tc) | -55°C ~ 175°C (TJ) |
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IPI05CN10N GMOSFET N-CH 100V 100A TO262-3 Infineon Technologies |
4,826 | - |
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Datasheet |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 10V | 5.4mOhm @ 100A, 10V | Through Hole | 4V @ 250µA | 181 nC @ 10 V | 100 V | ±20V | 12000 pF @ 50 V | - | - | PG-TO262-3 | - | 300W (Tc) | -55°C ~ 175°C (TJ) |
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SPP24N60C3HKSA1MOSFET N-CH 650V 24.3A TO220-3 Infineon Technologies |
2,243 | - |
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Datasheet |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 24.3A (Tc) | 10V | 160mOhm @ 15.4A, 10V | Through Hole | 3.9V @ 1.2mA | 135 nC @ 10 V | 650 V | ±20V | 3000 pF @ 25 V | - | - | PG-TO220-3-1 | - | 240W (Tc) | -55°C ~ 150°C (TJ) |
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SPD35N10MOSFET N-CH 100V 35A TO252-3 Infineon Technologies |
2,186 | - |
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Datasheet |
SIPMOS® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 35A (Tc) | 10V | 44mOhm @ 26.4A, 10V | Surface Mount | - | 65 nC @ 10 V | 100 V | ±20V | 1570 pF @ 25 V | - | - | PG-TO252-3 | - | 150W (Tc) | -55°C ~ 175°C (TJ) |
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IPC218N06N3X7SA1MV POWER MOS Infineon Technologies |
2,760 | - |
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Datasheet |
OptiMOS™ 3 | Die | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | - | 10V | 100mOhm @ 2A, 10V | Surface Mount | 4V @ 196µA | - | 60 V | - | - | - | - | Die | - | - | - |
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IPC218N06N3X1SA2MOSFET N-CH 60V 3A SAWN ON FOIL Infineon Technologies |
3,947 | - |
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Datasheet |
OptiMOS™ | Die | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 3A (Tj) | 10V | 100mOhm @ 2A, 10V | Surface Mount | 4V @ 196µA | - | 60 V | - | - | - | - | Sawn on foil | - | - | - |
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IRL3502MOSFET N-CH 20V 110A TO220AB Infineon Technologies |
3,237 | - |
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Datasheet |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 110A (Tc) | 4.5V, 7V | 7mOhm @ 64A, 7V | Through Hole | 700mV @ 250µA (Min) | 110 nC @ 4.5 V | 20 V | ±10V | 4700 pF @ 15 V | - | - | TO-220AB | - | 140W (Tc) | -55°C ~ 150°C (TJ) |
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IRFS4610MOSFET N-CH 100V 73A D2PAK Infineon Technologies |
4,755 | - |
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Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 73A (Tc) | 10V | 14mOhm @ 44A, 10V | Surface Mount | 4V @ 100µA | 140 nC @ 10 V | 100 V | ±20V | 3550 pF @ 50 V | - | - | D2PAK | - | 190W (Tc) | -55°C ~ 175°C (TJ) |
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