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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFH5215TR2PBFMOSFET N-CH 150V 5.0A PQFN Infineon Technologies |
2,726 | - |
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Datasheet |
- | 8-VQFN Exposed Pad | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 5A (Ta), 27A (Tc) | - | 58mOhm @ 16A, 10V | Surface Mount | 5V @ 100µA | 32 nC @ 10 V | 150 V | - | 1350 pF @ 50 V | - | - | PQFN (5x6) | - | - | - |
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IRFH5220TR2PBFMOSFET N-CH 200V 3.8A PQFN Infineon Technologies |
2,582 | - |
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Datasheet |
- | 8-VQFN Exposed Pad | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 3.8A (Ta), 20A (Tc) | - | 99.9mOhm @ 5.8A, 10V | Surface Mount | 5V @ 100µA | 30 nC @ 10 V | 200 V | - | 1380 pF @ 50 V | - | - | PQFN (5x6) | - | - | - |
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IPB65R310CFDATMA1MOSFET N-CH 650V 11.4A D2PAK Infineon Technologies |
2,729 | - |
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Datasheet |
CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 11.4A (Tc) | 10V | 310mOhm @ 4.4A, 10V | Surface Mount | 4.5V @ 400µA | 41 nC @ 10 V | 650 V | ±20V | 1100 pF @ 100 V | - | - | PG-TO263-3 | - | 104.2W (Tc) | -55°C ~ 150°C (TJ) |
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IPD65R250C6XTMA1MOSFET N-CH 650V 16.1A TO252-3 Infineon Technologies |
3,902 | - |
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Datasheet |
CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 16.1A (Tc) | 10V | 250mOhm @ 4.4A, 10V | Surface Mount | 3.5V @ 400µA | 44 nC @ 10 V | 650 V | ±20V | 950 pF @ 100 V | - | - | PG-TO252-3 | - | 208.3W (Tc) | -55°C ~ 150°C (TJ) |
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IPD65R250E6XTMA1MOSFET N-CH 650V 16.1A TO252-3 Infineon Technologies |
3,320 | - |
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Datasheet |
CoolMOS™ E6 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 16.1A (Tc) | 10V | 250mOhm @ 4.4A, 10V | Surface Mount | 3.5V @ 400µA | 45 nC @ 10 V | 650 V | ±20V | 950 pF @ 1000 V | - | - | PG-TO252-3 | - | 208W (Tc) | -55°C ~ 150°C (TJ) |
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BSC010N04LSCATMA1MOSFET N-CH 40V 282A Infineon Technologies |
2,896 | - |
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Datasheet |
- | - | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 282A (Tc) | 4.5V, 10V | 1.05mOhm @ 50A, 10V | - | 2V @ 250µA | 133 nC @ 10 V | 40 V | ±20V | 9500 pF @ 20 V | - | - | - | - | 139W (Tc) | -55°C ~ 150°C (TJ) |
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IAUMN08S5N012GATMA1MOSFET_(75V 120V( Infineon Technologies |
4,909 | - |
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- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRL1004MOSFET N-CH 40V 130A TO220AB Infineon Technologies |
2,986 | - |
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Datasheet |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 130A (Tc) | 4.5V, 10V | 6.5mOhm @ 78A, 10V | Through Hole | 1V @ 250µA | 100 nC @ 4.5 V | 40 V | ±16V | 5330 pF @ 25 V | - | - | TO-220AB | - | 200W (Tc) | -55°C ~ 175°C (TJ) |
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IRFI4905MOSFET P-CH 55V 41A TO220AB FP Infineon Technologies |
4,066 | - |
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Datasheet |
HEXFET® | TO-220-3 Full Pack | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 41A (Tc) | 10V | 20mOhm @ 22A, 10V | Through Hole | 4V @ 250µA | 180 nC @ 10 V | 55 V | ±20V | 3400 pF @ 25 V | - | - | TO-220AB Full-Pak | - | 63W (Tc) | - |
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IRF3515LMOSFET N-CH 150V 41A TO262 Infineon Technologies |
3,795 | - |
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Datasheet |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 41A (Tc) | 10V | 45mOhm @ 25A, 10V | Through Hole | 4.5V @ 250µA | 107 nC @ 10 V | 150 V | ±30V | 2260 pF @ 25 V | - | - | TO-262 | - | 200W (Tc) | -55°C ~ 175°C (TJ) |
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