制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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IRFBA1405PMOSFET N-CH 55V 174A SUPER-220 Infineon Technologies |
2,101 | - |
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![]() Datasheet |
HEXFET® | TO-273AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 174A (Tc) | 10V | 5mOhm @ 101A, 10V | 4V @ 250µA | 260 nC @ 10 V | ±20V | 5480 pF @ 25 V | - | 330W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | SUPER-220™ (TO-273AA) |
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IRL1004SMOSFET N-CH 40V 130A D2PAK Infineon Technologies |
2,438 | - |
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HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 130A (Tc) | 4.5V, 10V | 6.5mOhm @ 78A, 10V | 1V @ 250µA | 100 nC @ 4.5 V | ±16V | 5330 pF @ 25 V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IPW65R150CFDFKSA1MOSFET N-CH 650V 22.4A TO247-3 Infineon Technologies |
3,149 | - |
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CoolMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 22.4A (Tc) | 10V | 150mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86 nC @ 10 V | ±20V | 2340 pF @ 100 V | - | 195.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3 |
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GS-065-018-6-LR-TRGS-065-018-6-LR-TR Infineon Technologies Canada Inc. |
3,577 | - |
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- | 8-VDFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 700 V | 23A (Tc) | 6V | 90mOhm @ 5.5A, 6V | 2.6V @ 4.8mA | 4.2 nC @ 6 V | +7V, -10V | 132 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PDFN (8x8) |
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IPC300N20N3X7SA1MV POWER MOS Infineon Technologies |
3,338 | - |
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OptiMOS™ 3 | Die | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | - | 10V | 100mOhm @ 2A, 10V | 4V @ 270µA | - | - | - | - | - | - | - | - | Surface Mount | Die |
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IPB80P04P407ATMA2MOSFET_(20V 40V) PG-TO263-3 Infineon Technologies |
4,228 | - |
|
![]() Datasheet |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Last Time Buy | P-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 7.4mOhm @ 80A, 10V | 4V @ 150µA | 89 nC @ 10 V | ±20V | 6085 pF @ 25 V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IRFS3107-7PPBFMOSFET N-CH 75V 240A D2PAK Infineon Technologies |
2,795 | - |
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HEXFET® | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 240A (Tc) | 10V | 2.6mOhm @ 160A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 9200 pF @ 50 V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK (7-Lead) |
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IPP100N18N3GXKSA1TRENCH >=100V Infineon Technologies |
2,290 | - |
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- | - | Tube | Last Time Buy | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRFH7004TR2PBFMOSFET N CH 40V 100A PQFN5X6 Infineon Technologies |
4,066 | - |
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- | 8-VQFN Exposed Pad | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | - | 1.4mOhm @ 100A, 10V | 3.9V @ 150µA | 194 nC @ 10 V | - | 6419 pF @ 25 V | - | - | - | - | - | Surface Mount | 8-PQFN (5x6) |
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IPC60R099C6X1SA1MOSFET N-CH BARE DIE Infineon Technologies |
4,101 | - |
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- |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |