| 制造商 | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
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IRF1405SMOSFET N-CH 55V 131A D2PAK Infineon Technologies |
4,298 | - |
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Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 131A (Tc) | 10V | 5.3mOhm @ 101A, 10V | Surface Mount | 4V @ 250µA | 260 nC @ 10 V | 55 V | ±20V | 5480 pF @ 25 V | - | - | D2PAK | - | 200W (Tc) | -55°C ~ 175°C (TJ) |
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IRL1404SMOSFET N-CH 40V 160A D2PAK Infineon Technologies |
2,023 | - |
|
Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 160A (Tc) | 4.3V, 10V | 4mOhm @ 95A, 10V | Surface Mount | 3V @ 250µA | 140 nC @ 5 V | 40 V | ±20V | 6600 pF @ 25 V | - | - | D2PAK | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) |
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IRF8301MTRPBFMOSFET N-CH 30V 34A DIRECTFET Infineon Technologies |
3,368 | - |
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Datasheet |
HEXFET® | DirectFET™ Isometric MT | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 34A (Ta), 192A (Tc) | 4.5V, 10V | 1.5mOhm @ 32A, 10V | Surface Mount | 2.35V @ 150µA | 77 nC @ 4.5 V | 30 V | ±20V | 6140 pF @ 15 V | - | - | DIRECTFET™ MT | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) |
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AUIRFS4010TRLMOSFET N-CH 100V 180A D2PAK Infineon Technologies |
2,768 | - |
|
Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 180A (Tc) | - | 4.7mOhm @ 106A, 10V | Surface Mount | 4V @ 250µA | 215 nC @ 10 V | 100 V | - | 9575 pF @ 50 V | - | - | PG-TO263-3 | - | 375W (Tc) | -55°C ~ 175°C (TJ) |
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IRFBL3315MOSFET N-CH 150V 21A SUPER D2PAK Infineon Technologies |
2,234 | - |
|
Datasheet |
- | Super D2-Pak | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 21A (Ta) | - | - | Surface Mount | - | - | 150 V | - | - | - | - | SUPER D2-PAK | - | - | - |
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IRFS3307TRLPBFMOSFET N-CH 75V 120A D2PAK Infineon Technologies |
2,127 | - |
|
Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 10V | 6.3mOhm @ 75A, 10V | Surface Mount | 4V @ 150µA | 180 nC @ 10 V | 75 V | ±20V | 5150 pF @ 50 V | - | - | D2PAK | - | 200W (Tc) | -55°C ~ 175°C (TJ) |
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IRF2805STRLPBFMOSFET N-CH 55V 135A D2PAK Infineon Technologies |
4,004 | - |
|
Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 135A (Tc) | 10V | 4.7mOhm @ 104A, 10V | Surface Mount | 4V @ 250µA | 230 nC @ 10 V | 55 V | ±20V | 5110 pF @ 25 V | - | - | D2PAK | - | 200W (Tc) | -55°C ~ 175°C (TJ) |
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BSC022N03SGMOSFET N-CH 30V 28A/100A TDSON Infineon Technologies |
3,936 | - |
|
Datasheet |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 28A (Ta), 100A (Tc) | 4.5V, 10V | 2.2mOhm @ 50A, 10V | Surface Mount | 2V @ 110µA | 64 nC @ 5 V | 30 V | ±20V | 8290 pF @ 15 V | - | - | PG-TDSON-8-1 | - | 2.8W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) |
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IRF3415SMOSFET N-CH 150V 43A D2PAK Infineon Technologies |
3,769 | - |
|
Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 43A (Tc) | 10V | 42mOhm @ 22A, 10V | Surface Mount | 4V @ 250µA | 200 nC @ 10 V | 150 V | ±20V | 2400 pF @ 25 V | - | - | D2PAK | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) |
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IRF3415LMOSFET N-CH 150V 43A TO262 Infineon Technologies |
4,673 | - |
|
Datasheet |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 43A (Tc) | 10V | 42mOhm @ 22A, 10V | Through Hole | 4V @ 250µA | 200 nC @ 10 V | 150 V | ±20V | 2400 pF @ 25 V | - | - | TO-262 | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) |





