| 制造商 | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
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IRF7420MOSFET P-CH 12V 11.5A 8SO Infineon Technologies |
3,079 | - |
|
Datasheet |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 11.5A (Tc) | 1.8V, 4.5V | 14mOhm @ 11.5A, 4.5V | Surface Mount | 900mV @ 250µA | 38 nC @ 4.5 V | 12 V | ±8V | 3529 pF @ 10 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
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IRF7453TRMOSFET N-CH 250V 2.2A 8SO Infineon Technologies |
2,340 | - |
|
Datasheet |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 2.2A (Ta) | 10V | 230mOhm @ 1.3A, 10V | Surface Mount | 5.5V @ 250µA | 38 nC @ 10 V | 250 V | ±30V | 930 pF @ 25 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
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IRF7477TRMOSFET N-CH 30V 14A 8SO Infineon Technologies |
3,467 | - |
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Datasheet |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 14A (Ta) | 4.5V, 10V | 8.5mOhm @ 14A, 10V | Surface Mount | 2.5V @ 250µA | 38 nC @ 4.5 V | 30 V | ±20V | 2710 pF @ 15 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
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IRF5805TRMOSFET P-CH 30V 3.8A MICRO6 Infineon Technologies |
2,314 | - |
|
Datasheet |
HEXFET® | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 3.8A (Ta) | 4.5V, 10V | 98mOhm @ 3.8A, 10V | Surface Mount | 2.5V @ 250µA | 17 nC @ 10 V | 30 V | ±20V | 511 pF @ 25 V | - | - | Micro6™(TSOP-6) | - | 2W (Ta) | -55°C ~ 150°C (TJ) |
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IRF5803D2MOSFET P-CH 40V 3.4A 8SO Infineon Technologies |
2,170 | - |
|
Datasheet |
FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 3.4A (Ta) | 4.5V, 10V | 112mOhm @ 3.4A, 10V | Surface Mount | 3V @ 250µA | 37 nC @ 10 V | 40 V | ±20V | 1110 pF @ 25 V | - | Schottky Diode (Isolated) | 8-SO | - | 2W (Ta) | -55°C ~ 150°C (TJ) |
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IRFU3709MOSFET N-CH 30V 90A IPAK Infineon Technologies |
4,910 | - |
|
Datasheet |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 90A (Tc) | 4.5V, 10V | 9mOhm @ 15A, 10V | Through Hole | 3V @ 250µA | 41 nC @ 4.5 V | 30 V | ±20V | 2672 pF @ 16 V | - | - | IPAK (TO-251AA) | - | 120W (Tc) | -55°C ~ 150°C (TJ) |
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IRL3715SMOSFET N-CH 20V 54A D2PAK Infineon Technologies |
4,038 | - |
|
Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 54A (Tc) | 4.5V, 10V | 14mOhm @ 26A, 10V | Surface Mount | 3V @ 250µA | 17 nC @ 4.5 V | 20 V | ±20V | 1060 pF @ 10 V | - | - | D2PAK | - | 3.8W (Ta), 71W (Tc) | -55°C ~ 175°C (TJ) |
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IRL3714SMOSFET N-CH 20V 36A D2PAK Infineon Technologies |
3,457 | - |
|
Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 36A (Tc) | 4.5V, 10V | 20mOhm @ 18A, 10V | Surface Mount | 3V @ 250µA | 9.7 nC @ 4.5 V | 20 V | ±20V | 670 pF @ 10 V | - | - | D2PAK | - | 47W (Tc) | -55°C ~ 175°C (TJ) |
|
IRLR3715MOSFET N-CH 20V 54A DPAK Infineon Technologies |
3,173 | - |
|
Datasheet |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 54A (Tc) | 4.5V, 10V | 14mOhm @ 26A, 10V | Surface Mount | 3V @ 250µA | 17 nC @ 4.5 V | 20 V | ±20V | 1060 pF @ 10 V | - | - | TO-252AA (DPAK) | - | 3.8W (Ta), 71W (Tc) | -55°C ~ 175°C (TJ) |
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IRLR3714MOSFET N-CH 20V 36A DPAK Infineon Technologies |
3,496 | - |
|
Datasheet |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 36A (Tc) | 4.5V, 10V | 20mOhm @ 18A, 10V | Surface Mount | 3V @ 250µA | 9.7 nC @ 4.5 V | 20 V | ±20V | 670 pF @ 10 V | - | - | TO-252AA (DPAK) | - | 47W (Tc) | -55°C ~ 175°C (TJ) |





