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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRLL014NPBFMOSFET N-CH 55V 2A SOT223 Infineon Technologies |
2,865 | - |
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Datasheet |
HEXFET® | TO-261-4, TO-261AA | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 55 V | 2A (Ta) | 4V, 10V | 140mOhm @ 2A, 10V | 2V @ 250µA | 14 nC @ 10 V | ±16V | 230 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 |
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IRF3711SPBFMOSFET N-CH 20V 110A D2PAK Infineon Technologies |
3,070 | - |
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Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 110A (Tc) | 4.5V, 10V | 6mOhm @ 15A, 10V | 3V @ 250µA | 44 nC @ 4.5 V | ±20V | 2980 pF @ 10 V | - | 3.1W (Ta), 120W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D2PAK |
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IRLL3303PBFMOSFET N-CH 30V 4.6A SOT223 Infineon Technologies |
4,755 | - |
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Datasheet |
HEXFET® | TO-261-4, TO-261AA | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 30 V | 4.6A (Ta) | 4.5V, 10V | 31mOhm @ 4.6A, 10V | 1V @ 250µA | 50 nC @ 10 V | ±16V | 840 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 |
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IRLL2705PBFMOSFET N-CH 55V 3.8A SOT223 Infineon Technologies |
3,565 | - |
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Datasheet |
HEXFET® | TO-261-4, TO-261AA | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 55 V | 3.8A (Ta) | 4V, 10V | 40mOhm @ 3.8A, 10V | 2V @ 250µA | 48 nC @ 10 V | ±16V | 870 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 |
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IRLR3410PBFMOSFET N-CH 100V 17A DPAK Infineon Technologies |
4,562 | - |
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Datasheet |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 100 V | 17A (Tc) | 4V, 10V | 105mOhm @ 10A, 10V | 2V @ 250µA | 34 nC @ 5 V | ±16V | 800 pF @ 25 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IRF840PBFMOSFET N-CH 500V 8A TO220AB Infineon Technologies |
4,113 | - |
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- |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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IRFB4710PBFMOSFET N-CH 100V 75A TO220AB Infineon Technologies |
4,881 | - |
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Datasheet |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 75A (Tc) | 10V | 14mOhm @ 45A, 10V | 5.5V @ 250µA | 170 nC @ 10 V | ±20V | 6160 pF @ 25 V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRFP460PBFMOSFET N-CH 500V 20A TO247AC Infineon Technologies |
4,063 | - |
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- |
HEXFET® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 20A (Tc) | 10V | 270mOhm @ 12A, 10V | 4V @ 250µA | 210 nC @ 10 V | ±20V | 4200 pF @ 25 V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
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IRFR6215PBFMOSFET P-CH 150V 13A DPAK Infineon Technologies |
3,672 | - |
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Datasheet |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Discontinued at Digi-Key | P-Channel | MOSFET (Metal Oxide) | 150 V | 13A (Tc) | 10V | 295mOhm @ 6.6A, 10V | 4V @ 250µA | 66 nC @ 10 V | ±20V | 860 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IRFB11N50APBFMOSFET N-CH 500V 11A TO220AB Infineon Technologies |
4,171 | - |
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HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 11A (Tc) | 10V | 520mOhm @ 6.6A, 10V | 4V @ 250µA | 52 nC @ 10 V | ±30V | 1423 pF @ 25 V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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