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FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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IPI25N06S3-25MOSFET N-CH 55V 25A TO262-3 Infineon Technologies |
0 |
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Datasheet |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 25A (Tc) | 10V | 25.1mOhm @ 15A, 10V | 4V @ 20µA | 41 nC @ 10 V | ±20V | 1862 pF @ 25 V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IPI25N06S3L-22MOSFET N-CH 55V 25A TO262-3 Infineon Technologies |
0 |
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Datasheet |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 25A (Tc) | 5V, 10V | 21.6mOhm @ 17A, 10V | 2.2V @ 20µA | 47 nC @ 10 V | ±16V | 2260 pF @ 25 V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IPI60R199CPXKSA1MOSFET N-CH 600V 16A TO262-3 Infineon Technologies |
0 |
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Datasheet |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 600 V | 16A (Tc) | 10V | 199mOhm @ 9.9A, 10V | 3.5V @ 660µA | 43 nC @ 10 V | ±20V | 1520 pF @ 100 V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IPI80N06S3-05MOSFET N-CH 55V 80A TO262-3 Infineon Technologies |
0 |
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Datasheet |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 5.4mOhm @ 63A, 10V | 4V @ 110µA | 240 nC @ 10 V | ±20V | 10760 pF @ 25 V | - | 165W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IPI80N06S3-07MOSFET N-CH 55V 80A TO262-3 Infineon Technologies |
0 |
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Datasheet |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 6.8mOhm @ 51A, 10V | 4V @ 80µA | 170 nC @ 10 V | ±20V | 7768 pF @ 25 V | - | 135W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IPI80N06S3L06XKMOSFET N-CH 55V 80A TO262-3 Infineon Technologies |
0 |
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Datasheet |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 5V, 10V | 5.9mOhm @ 56A, 10V | 2.2V @ 80µA | 196 nC @ 10 V | ±16V | 9417 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IPI80N06S3L-08MOSFET N-CH 55V 80A TO262-3 Infineon Technologies |
0 |
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Datasheet |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 5V, 10V | 7.9mOhm @ 43A, 10V | 2.2V @ 55µA | 134 nC @ 10 V | ±16V | 6475 pF @ 25 V | - | 105W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IPP03N03LB GMOSFET N-CH 30V 80A TO220-3 Infineon Technologies |
0 |
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Datasheet |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 3.1mOhm @ 55A, 10V | 2V @ 100µA | 59 nC @ 5 V | ±20V | 7624 pF @ 15 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP048N06L GMOSFET N-CH 60V 100A TO220-3 Infineon Technologies |
0 |
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Datasheet |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 4.5V, 10V | 4.7mOhm @ 100A, 10V | 2V @ 270µA | 225 nC @ 10 V | ±20V | 7600 pF @ 30 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP04N03LB GMOSFET N-CH 30V 80A TO220-3 Infineon Technologies |
0 |
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Datasheet |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 3.8mOhm @ 55A, 10V | 2V @ 70µA | 40 nC @ 5 V | ±20V | 5203 pF @ 15 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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