| 制造商 | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRLHM620TRPBFMOSFET N-CH 20V 26A/40A PQFN Infineon Technologies |
10,726 | - |
|
Datasheet |
HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 26A (Ta), 40A (Tc) | 2.5V, 10V | 2.5mOhm @ 20A, 4.5V | Surface Mount | 1.1V @ 50µA | 78 nC @ 4.5 V | 20 V | ±12V | 3620 pF @ 10 V | - | - | PQFN (3x3) | - | 2.7W (Ta), 37W (Tc) | -55°C ~ 150°C (TJ) |
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BSC034N03LSGATMA1MOSFET N-CH 30V 22A/100A TDSON Infineon Technologies |
4,994 | - |
|
Datasheet |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 22A (Ta), 100A (Tc) | 4.5V, 10V | 3.4mOhm @ 30A, 10V | Surface Mount | 2.2V @ 250µA | 52 nC @ 10 V | 30 V | ±20V | 4300 pF @ 15 V | - | - | PG-TDSON-8-5 | - | 2.5W (Ta), 57W (Tc) | -55°C ~ 150°C (TJ) |
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BSC030N03MSGATMA1MOSFET N-CH 30V 21A/100A TDSON Infineon Technologies |
10,567 | - |
|
Datasheet |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 21A (Ta), 100A (Tc) | 4.5V, 10V | 3mOhm @ 30A, 10V | Surface Mount | 2V @ 250µA | 73 nC @ 10 V | 30 V | ±20V | 5700 pF @ 15 V | - | - | PG-TDSON-8-1 | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) |
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IPN80R1K2P7ATMA1MOSFET N-CH 800V 4.5A SOT223 Infineon Technologies |
5,827 | - |
|
Datasheet |
CoolMOS™ P7 | TO-261-4, TO-261AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 4.5A (Tc) | 10V | 1.2Ohm @ 1.7A, 10V | Surface Mount | 3.5V @ 80µA | 11 nC @ 10 V | 800 V | ±20V | 300 pF @ 500 V | - | - | PG-SOT223 | - | 6.8W (Tc) | -55°C ~ 150°C (TJ) |
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IRFU3910PBFMOSFET N-CH 100V 16A IPAK Infineon Technologies |
1,887 | - |
|
Datasheet |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 16A (Tc) | 10V | 115mOhm @ 10A, 10V | Through Hole | 4V @ 250µA | 44 nC @ 10 V | 100 V | ±20V | 640 pF @ 25 V | - | - | IPAK (TO-251AA) | - | 79W (Tc) | -55°C ~ 175°C (TJ) |
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ISZ24DP10LMATMA1TRENCH >=100V Infineon Technologies |
3,786 | - |
|
Datasheet |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 9.7A | - | - | Surface Mount | - | - | 100 V | - | - | - | - | PG-TDSON-8-25 | - | - | - |
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IPD60R600P7ATMA1MOSFET N-CH 600V 6A TO252-3 Infineon Technologies |
2,196 | - |
|
Datasheet |
CoolMOS™ P7 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 6A (Tc) | 10V | 600mOhm @ 1.7A, 10V | Surface Mount | 4V @ 80µA | 9 nC @ 10 V | 600 V | ±20V | 363 pF @ 400 V | - | - | PG-TO252-3 | - | 30W (Tc) | -55°C ~ 150°C (TJ) |
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ISZ0703NLSATMA1MOSFET N-CH 60V 13A/56A TSDSON Infineon Technologies |
17,201 | - |
|
Datasheet |
OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 13A (Ta), 56A (Tc) | 4.5V, 10V | 7.3mOhm @ 20A, 10V | Surface Mount | 2.3V @ 15µA | 23 nC @ 10 V | 60 V | ±20V | 1400 pF @ 30 V | - | - | PG-TSDSON-8-25 | - | 2.5W (Ta), 44W (Tc) | -55°C ~ 175°C (TJ) |
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IPD60R950C6ATMA1MOSFET N-CH 600V 4.4A TO252-3 Infineon Technologies |
6,743 | - |
|
Datasheet |
CoolMOS™ C6 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 4.4A (Tc) | 10V | 950mOhm @ 1.5A, 10V | Surface Mount | 3.5V @ 130µA | 13 nC @ 10 V | 600 V | ±20V | 280 pF @ 100 V | - | - | PG-TO252-3 | - | 37W (Tc) | -55°C ~ 150°C (TJ) |
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IPD130N10NF2SATMA1MOSFET Infineon Technologies |
1,934 | - |
|
Datasheet |
StrongIRFET™ 2 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 11A (Ta), 52A (Tc) | 6V, 10V | 13mOhm @ 30A, 10V | Surface Mount | 3.8V @ 30µA | 28 nC @ 10 V | 100 V | ±20V | 1300 pF @ 50 V | - | - | PG-TO252-3 | - | 3W (Ta), 71W (Tc) | -55°C ~ 175°C (TJ) |





