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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AUXDIFZ44ESTRLMOSFET N-CH 60V 48A D2PAK Infineon Technologies |
2,575 | - |
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Datasheet |
* | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPI50R399CPXKSA2MOSFET N-CH 500V 9A TO262-3 Infineon Technologies |
3,215 | - |
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Datasheet |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 9A (Tc) | 10V | 399mOhm @ 4.9A, 10V | 3.5V @ 330µA | 23 nC @ 10 V | ±20V | 890 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IPP023N04NGHKSA1MOSFET N-CH 40V 90A TO220-3 Infineon Technologies |
3,349 | - |
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Datasheet |
OptiMOS™ 3 | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPP037N06L3GHKSA1MOSFET N-CH 60V 90A TO220-3 Infineon Technologies |
2,098 | - |
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Datasheet |
OptiMOS™ 3 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 90A (Tc) | 4.5V, 10V | 3.7mOhm @ 90A, 10V | 2.2V @ 93µA | 79 nC @ 4.5 V | ±20V | 13000 pF @ 30 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP05CN10NGHKSA1MOSFET N-CH 100V 100A TO-220 Infineon Technologies |
4,445 | - |
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Datasheet |
OptiMOS™ 2 | - | Tube | Active | - | - | - | 100A (Tc) | - | - | - | - | - | - | - | - | - | - | - | - | - |
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SPP11N65C3HKSA1MOSFET N-CH 650V 11A TO-220 Infineon Technologies |
4,930 | - |
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Datasheet |
CoolMOS™ | - | Tube | Active | - | - | - | 11A (Tc) | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPD60R380E6BTMA1MOSFET N-CH 600V 10.6A TO252-3 Infineon Technologies |
3,311 | - |
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Datasheet |
CoolMOS™ E6 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 600 V | 10.6A (Tc) | 10V | 380mOhm @ 3.8A, 10V | 3.5V @ 300µA | 32 nC @ 10 V | ±20V | 700 pF @ 100 V | - | 83W (Tc) | -55°C ~ 155°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPU80R1K4CEAKMA1MOSFET N-CH 800V 3.9A TO251-3 Infineon Technologies |
2,769 | - |
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Datasheet |
CoolMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 3.9A (Tc) | 10V | 1.4Ohm @ 2.3A, 10V | 3.9V @ 240µA | 23 nC @ 10 V | ±20V | 570 pF @ 100 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
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64-0055PBFMOSFET N-CH 60V 160A TO220AB Infineon Technologies |
3,644 | - |
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Datasheet |
HEXFET® | - | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 160A (Tc) | 10V | 4.2mOhm @ 75A, 10V | 4V @ 150µA | 120 nC @ 10 V | ±20V | 4520 pF @ 50 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | - |
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IRFC3004EBMOSFET N-CH WAFER Infineon Technologies |
2,574 | - |
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Datasheet |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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