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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPI60R165CPXKSA1HIGH POWER_LEGACY Infineon Technologies |
500 | - |
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Datasheet |
CoolMOS® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 21A (Tc) | 10V | 165mOhm @ 12A, 10V | Through Hole | 3.5V @ 790µA | 52 nC @ 10 V | 600 V | ±20V | 2000 pF @ 100 V | - | - | PG-TO262-3-1 | - | 192W (Tc) | -55°C ~ 150°C (TJ) |
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IPZA60R099P7XKSA1MOSFET N-CH 600V 31A TO247-4 Infineon Technologies |
240 | - |
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Datasheet |
CoolMOS™ P7 | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 31A (Tc) | 10V | 99mOhm @ 10.5A, 10V | Through Hole | 4V @ 530µA | 45 nC @ 10 V | 600 V | ±20V | 1952 pF @ 400 V | - | - | PG-TO247-4 | - | 117W (Tc) | -55°C ~ 150°C (TJ) |
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IPBE65R145CFD7AATMA1AUTOMOTIVE PG-TO263-7 Infineon Technologies |
934 | - |
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Datasheet |
CoolMOS™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 17A (Tc) | 10V | 145mOhm @ 8.5A, 10V | Surface Mount | 4.5V @ 420µA | 36 nC @ 10 V | 650 V | ±20V | 1694 pF @ 400 V | - | - | PG-TO263-7-11 | - | 98W (Tc) | -40°C ~ 150°C (TJ) |
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IPW65R150CFDFKSA2MOSFET N-CH 650V 22.4A TO247-3 Infineon Technologies |
192 | - |
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Datasheet |
CoolMOS™ CFD2 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 22.4A (Tc) | 10V | 150mOhm @ 9.3A, 10V | Through Hole | 4.5V @ 900µA | 86 nC @ 10 V | 650 V | ±20V | 2340 pF @ 100 V | - | - | PG-TO247-3-41 | - | 195.3W (Tc) | -55°C ~ 150°C (TJ) |
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IPDQ65R099CFD7AXTMA1AUTOMOTIVE_COOLMOS Infineon Technologies |
460 | - |
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Datasheet |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 29A (Tc) | 10V | 99mOhm @ 9.7A, 10V | Surface Mount | 4.5V @ 480µA | 39 nC @ 10 V | 650 V | ±20V | 1942 pF @ 400 V | AEC-Q101 | - | PG-HDSOP-22-1 | Automotive | 186W (Tc) | -40°C ~ 150°C (TJ) |
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IMWH170R650M1XKSA1IMWH170R650M1XKSA1 Infineon Technologies |
425 | - |
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CoolSiC™ | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 7.5A (Tc) | 12V, 15V | 580mOhm @ 1.5A, 15V | Through Hole | 5.7V @ 1.7mA | 8.1 nC @ 12 V | 1700 V | 15V, 12V | 337 pF @ 1000 V | - | - | PG-TO247-3-U04 | - | 88W (Tc) | -55°C ~ 175°C (TJ) |
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IQD009N06NM5ATMA1TRENCH 40<-<100V Infineon Technologies |
4,943 | - |
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Datasheet |
OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 42A (Ta), 445A (Tc) | 6V, 10V | 0.9mOhm @ 50A, 10V | Surface Mount | 3.3V @ 163µA | 150 nC @ 10 V | 60 V | ±20V | 12000 pF @ 30 V | - | - | PG-TSON-8-9 | - | 3W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) |
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IPB60R105CFD7ATMA1MOSFET N-CH 600V 21A TO263-3 Infineon Technologies |
848 | - |
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Datasheet |
CoolMOS™ CFD7 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 21A (Tc) | 10V | 105mOhm @ 9.3A, 10V | Surface Mount | 4.5V @ 470µA | 42 nC @ 10 V | 600 V | ±20V | 1752 pF @ 400 V | - | - | PG-TO263-3-2 | - | 106W (Tc) | -55°C ~ 150°C (TJ) |
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IMT65R260M1HXUMA1SILICON CARBIDE MOSFET Infineon Technologies |
1,870 | - |
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Datasheet |
CoolSiC™ | 8-PowerSFN | Tape & Reel (TR) | Active | - | SiCFET (Silicon Carbide) | - | 18V | - | Surface Mount | - | - | 650 V | - | - | - | - | PG-HSOF-8-2 | - | - | - |
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IPT65R099CFD7XTMA1MOSFET N-CH 650V 8HSOF Infineon Technologies |
1,995 | - |
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Datasheet |
CoolMOS™ CFD7 | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | - | - | Surface Mount | - | - | 650 V | - | - | - | - | PG-HSOF-8-2 | - | - | - |
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