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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MSC090SMA070BSICFET N-CH 700V TO247-3 Microchip Technology |
127 | - |
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Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | - | - | - | - | - | - | - | - | - | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
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MSC180SMA120SMOSFET SIC 1200 V 180 MOHM TO-26 Microchip Technology |
256 | - |
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Datasheet |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 21A (Tc) | 20V | 225mOhm @ 8A, 20V | 3.26V @ 500µA | 34 nC @ 20 V | +23V, -10V | 510 pF @ 1000 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D3PAK |
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APT22F80BMOSFET N-CH 800V 23A TO247 Microchip Technology |
262 | - |
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Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 23A (Tc) | 10V | 500mOhm @ 12A, 10V | 5V @ 1mA | 150 nC @ 10 V | ±30V | 4595 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
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APT30M70BVRGMOSFET N-CH 300V 48A TO247 Microchip Technology |
101 | - |
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Datasheet |
POWER MOS V® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 48A (Tc) | 10V | 70mOhm @ 500mA, 10V | 4V @ 1mA | 225 nC @ 10 V | ±30V | 5870 pF @ 25 V | - | 370W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
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MSC035SMA070B4TRANS SJT N-CH 700V 77A TO247-4 Microchip Technology |
136 | - |
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Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | 77A (Tc) | 20V | 44mOhm @ 30A, 20V | 2.7V @ 2mA (Typ) | 99 nC @ 20 V | +23V, -10V | 2010 pF @ 700 V | - | 283W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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VP2206N2MOSFET P-CH 60V 750MA TO39 Microchip Technology |
919 | - |
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Datasheet |
- | TO-205AD, TO-39-3 Metal Can | Bag | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 750mA (Tj) | 5V, 10V | 900mOhm @ 3.5A, 10V | 3.5V @ 10mA | - | ±20V | 450 pF @ 25 V | - | 360mW (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-39 |
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APT60N60BCSGMOSFET N-CH 600V 60A TO247 Microchip Technology |
132 | - |
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Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 60A (Tc) | 10V | 45mOhm @ 44A, 10V | 3.9V @ 3mA | 190 nC @ 10 V | ±30V | 7200 pF @ 25 V | - | 431W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
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MSC025SMA120SSICFET N-CH 1.2KV 100A D3PAK Microchip Technology |
127 | - |
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Datasheet |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 89A (Tc) | - | - | - | - | - | - | - | - | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D3PAK |
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APT50M38JLLMOSFET N-CH 500V 88A ISOTOP Microchip Technology |
89 | - |
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Datasheet |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 88A (Tc) | 10V | 38mOhm @ 44A, 10V | 5V @ 5mA | 270 nC @ 10 V | ±30V | 12000 pF @ 25 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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APT10021JFLLMOSFET N-CH 1000V 37A ISOTOP Microchip Technology |
56 | - |
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Datasheet |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 37A (Tc) | 10V | 210mOhm @ 18.5A, 10V | 5V @ 5mA | 395 nC @ 10 V | ±30V | 9750 pF @ 25 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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