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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APT100MC120JCU2SICFET N-CH 1200V 143A SOT227 Microchip Technology |
3,228 | - |
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Datasheet |
- | SOT-227-4, miniBLOC | Bulk | Last Time Buy | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 143A (Tc) | 20V | 17mOhm @ 100A, 20V | 2.3V @ 2mA | 360 nC @ 20 V | +25V, -10V | 5960 pF @ 1000 V | - | 600W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
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APT50MC120JCU2MOSFET N-CH 1200V 71A SOT227 Microchip Technology |
2,100 | - |
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Datasheet |
- | SOT-227-4, miniBLOC | Bulk | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 1200 V | 71A (Tc) | 20V | 34mOhm @ 50A, 20V | 2.3V @ 1mA (Typ) | 179 nC @ 20 V | +25V, -10V | 2980 pF @ 1000 V | - | 300W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
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APT1001R1BNMOSFET N-CH 1000V 10.5A TO247AD Microchip Technology |
4,816 | - |
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Datasheet |
POWER MOS IV® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 10.5A (Tc) | 10V | 1.1Ohm @ 5.25A, 10V | 4V @ 1mA | 130 nC @ 10 V | ±30V | 2950 pF @ 25 V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD |
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APT1001RBNMOSFET N-CH 1000V 11A TO247AD Microchip Technology |
4,490 | - |
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Datasheet |
POWER MOS IV® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 11A (Tc) | 10V | 1Ohm @ 5.5A, 10V | 4V @ 1mA | 130 nC @ 10 V | ±30V | 2950 pF @ 25 V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD |
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APT5020BNMOSFET N-CH 500V 28A TO247AD Microchip Technology |
4,237 | - |
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Datasheet |
POWER MOS IV® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 28A (Tc) | 10V | 200mOhm @ 14A, 10V | 4V @ 1mA | 210 nC @ 10 V | ±30V | 3500 pF @ 25 V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD |
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APT5020BNFRMOSFET N-CH 500V 28A TO247AD Microchip Technology |
2,112 | - |
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POWER MOS IV® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 28A (Tc) | 10V | 200mOhm @ 14A, 10V | 4V @ 1mA | 210 nC @ 10 V | ±30V | 3500 pF @ 25 V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD |
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TN2130K1-G-VAOMOSFET N-CH 300V 85MA SOT23-3 Microchip Technology |
3,235 | - |
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- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 85mA (Tj) | 4.5V | 25Ohm @ 120mA, 4.5V | 2.4V @ 1mA | - | ±20V | 50 pF @ 25 V | - | 360mW (Ta) | -55°C ~ 150°C (TA) | - | - | Surface Mount | SOT-23-3 |
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TP5335K1-G-VAOMOSFET P-CH 350V 85MA SOT23-3 Microchip Technology |
4,281 | - |
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- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 350 V | 85mA (Tj) | 4.5V, 10V | 30Ohm @ 200mA, 10V | 2.4V @ 1mA | - | ±20V | 110 pF @ 25 V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 |
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MSC080SMA120SAMOSFET SIC 1200 V 80 MOHM TO-263 Microchip Technology |
2,943 | - |
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- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 35A (Tc) | 20V | 100mOhm @ 15A, 20V | 2.8V @ 1mA | 64 nC @ 20 V | +23V, -10V | 838 pF @ 1000 V | - | 182W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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MSC025SMA330B4MOSFET SIC 3300 V 25 MOHM TO-247 Microchip Technology |
4,367 | - |
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- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 3300 V | 104A (Tc) | 20V | 31mOhm @ 40A, 20V | 2.7V @ 7mA | 410 nC @ 20 V | +23V, -10V | 8720 pF @ 2640 V | - | - | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-4 |
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