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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STD5NM60-1MOSFET N-CH 600V 5A IPAK STMicroelectronics |
62 | - |
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Datasheet |
MDmesh™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 5A (Tc) | 10V | 1Ohm @ 2.5A, 10V | 5V @ 250µA | 18 nC @ 10 V | ±30V | 400 pF @ 25 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK |
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STF10N105K5MOSFET N-CH 1050V 6A TO220FP STMicroelectronics |
45 | - |
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Datasheet |
MDmesh™ K5 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1050 V | 6A (Tc) | 10V | 1.3Ohm @ 3A, 10V | 5V @ 100µA | 21.5 nC @ 10 V | 30V | 545 pF @ 100 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220FP |
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STW18N60DM2MOSFET N-CH 600V 12A TO247 STMicroelectronics |
64 | - |
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Datasheet |
MDmesh™ DM2 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 295mOhm @ 6A, 10V | 5V @ 250µA | 20 nC @ 10 V | ±25V | 800 pF @ 100 V | - | 90W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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STF24N65M2MOSFET N-CH 650V 16A TO220FP STMicroelectronics |
87 | - |
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Datasheet |
MDmesh™ M2 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 16A (Tc) | 10V | 230mOhm @ 8A, 10V | 4V @ 250µA | 29 nC @ 10 V | ±25V | 1060 pF @ 100 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220FP |
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STW35N60DM2MOSFET N-CH 600V 28A TO247 STMicroelectronics |
27 | - |
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Datasheet |
MDmesh™ DM2 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 28A (Tc) | 10V | 110mOhm @ 14A, 10V | 5V @ 250µA | 54 nC @ 10 V | ±25V | 2400 pF @ 100 V | - | 210W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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STI47N60DM6AGPOWER TRANSISTORS STMicroelectronics |
30 | - |
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Datasheet |
MDmesh™ DM6 | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 36A (Tc) | 10V | 80mOhm @ 18A, 10V | 4.75V @ 250µA | 55 nC @ 10 V | ±25V | 2350 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-262 (I2PAK) |
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STL36N60M6MOSFET N-CH 600V 25A PWRFLAT HV STMicroelectronics |
50 | - |
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Datasheet |
MDmesh™ M6 | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 110mOhm @ 12.5A, 10V | 4.75V @ 250µA | 44.3 nC @ 10 V | ±25V | 1960 pF @ 100 V | - | 160W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerFlat™ (8x8) HV |
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STWA75N65DM6N-CHANNEL 650 V, 33 MOHM TYP., 7 STMicroelectronics |
14 | - |
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Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 75A (Tc) | 10V | 36mOhm @ 37.5A, 10V | 4.75V @ 250µA | 118 nC @ 10 V | ±25V | 5700 pF @ 100 V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 Long Leads |
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STW78N65M5MOSFET N-CH 650V 69A TO247 STMicroelectronics |
59 | - |
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Datasheet |
MDmesh™ V | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 69A (Tc) | 10V | 32mOhm @ 34.5A, 10V | 5V @ 250µA | 203 nC @ 10 V | ±25V | 9000 pF @ 100 V | - | 450W (Tc) | 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-3 |
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SCTWA90N65G2VSILICON CARBIDE POWER MOSFET 650 STMicroelectronics |
8 | - |
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Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 119A (Tc) | 18V | 24mOhm @ 50A, 18V | 5V @ 1mA | 157 nC @ 18 V | +22V, -10V | 3380 pF @ 400 V | - | 565W (Tc) | -55°C ~ 200°C (TJ) | - | - | Through Hole | TO-247 Long Leads |
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