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FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AIMCQ120R020M1TXTMA1SIC_DISCRETE |
2,118 |
|
- |
CoolSiC™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 116A (Tc) | 18V, 20V | 25mOhm @ 43A, 20V | Surface Mount | 5.1V @ 13.7mA | 82 nC @ 20 V | 1200 V | +25V, -10V | 2667 pF @ 800 V | AEC-Q101 | - | PG-HDSOP-22 | Automotive | 577W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPQC60T010S7AXTMA1AUTOMOTIVE_COOLMOS |
4,563 |
|
- |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 174A (Tc) | 12V | 10mOhm @ 50A, 12V | Surface Mount | 4.5V @ 3.06mA | 318 nC @ 12 V | 600 V | ±20V | 11986 pF @ 300 V | AEC-Q101 | - | PG-HDSOP-22-101 | Automotive | 694W (Tc) | -40°C ~ 150°C (TJ) |
|
|
IPDQ60T010S7AXTMA1AUTOMOTIVE_COOLMOS |
2,458 |
|
- |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 174A (Tc) | 12V | 10mOhm @ 50A, 12V | Surface Mount | 4.5V @ 3.06mA | 318 nC @ 12 V | 600 V | ±20V | 11986 pF @ 300 V | AEC-Q101 | - | PG-HDSOP-22-1 | Automotive | 694W (Tc) | -40°C ~ 150°C (TJ) |
|
|
SCT020W120G3-4AGAUTOMOTIVE-GRADE SILICON CARBIDE |
2,605 |
|
Datasheet |
* | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
SCT020HU120G3AGAUTOMOTIVE-GRADE SILICON CARBIDE |
3,651 |
|
Datasheet |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
SCT012H90G3AGH2PAK-7 |
2,439 |
|
Datasheet |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 110A (Tc) | 15V, 18V | 15.8mOhm @ 60A, 18V | Surface Mount | 4.2V @ 10mA | 138 nC @ 18 V | 900 V | +18V, -5V | 3880 pF @ 600 V | AEC-Q101 | - | H2PAK-7 | Automotive | 625W (Tc) | -55°C ~ 175°C (TJ) |
|
|
SCT016H120G3AGAUTOMOTIVE-GRADE SILICON CARBIDE |
2,245 |
|
Datasheet |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IXFT150N25X3HVMOSFET N-CH 250V 150A TO268HV |
4,906 |
|
Datasheet |
HiPerFET™, Ultra X3 | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150A (Tc) | 10V | 9mOhm @ 75A, 10V | Surface Mount | 4.5V @ 4mA | 154 nC @ 10 V | 250 V | ±20V | 10400 pF @ 25 V | - | - | TO-268HV (IXFT) | - | 780W (Tc) | -55°C ~ 150°C (TJ) |
|
|
DMWSH120H28SM3SIC MOSFET BVDSS: >1000V TO247 T |
3,793 |
|
- |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 97.4A (Tc) | 15V | 28.5mOhm @ 50A, 15V | Through Hole | 3.6V @ 17.7mA | 175 nC @ 15 V | 1200 V | +19V, -8V | 3905 pF @ 1000 V | - | - | TO-247 | - | 405W (Tc) | -55°C ~ 175°C (TJ) |
|
|
DMWSH120H28SM4SIC MOSFET BVDSS: >1000V TO247-4 |
2,248 |
|
- |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 100A (Tc) | 15V | 28.5mOhm @ 50A, 15V | Through Hole | 3.6V @ 17.7mA | 173.7 nC @ 15 V | 1200 V | +19V, -8V | 3944 pF @ 1000 V | - | - | TO-247-4 | - | 429W (Tc) | -55°C ~ 175°C (TJ) |
|
|
DIW120SIC028SIC MOSFET, TO-247-3L, N, 118A, |
3,863 |
|
Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 118A (Tc) | 20V | 28mOhm @ 80A, 20V | Through Hole | 4V @ 25mA | 373 nC @ 20 V | 1200 V | +20V, -5V | 5691 pF @ 1000 V | - | - | TO-247 | - | 715W (Tc) | -55°C ~ 175°C (TJ) |
|
|
DIF120SIC022SIC MOSFET, TO-247-4L, N, 120A, |
4,571 |
|
Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 120A (Tc) | 18V | 22.3mOhm @ 75A, 18V | Through Hole | 4V @ 23.5mA | 269 nC @ 18 V | 1200 V | +18V, -4V | 4817 pF @ 1000 V | - | - | TO-247-4 | - | 340W (Tc) | -55°C ~ 175°C (TJ) |
|
|
DIF120SIC028SIC MOSFET, TO-247-4L, N, 118A, |
3,262 |
|
Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 118A (Tc) | 20V | 28mOhm @ 80A, 20V | Through Hole | 4V @ 25mA | 373 nC @ 20 V | 1200 V | +20V, -5V | 5691 pF @ 1000 V | - | - | TO-247-4 | - | 715W (Tc) | -55°C ~ 175°C (TJ) |
|
|
DIW065SIC015SIC MOSFET, TO-247-3L, N, 150A, |
3,601 |
|
Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 150A (Tc) | 18V | 15mOhm @ 75A, 18V | Through Hole | 4V @ 15mA | 236 nC @ 20 V | 650 V | +15V, -4V | 7169 pF @ 400 V | - | - | TO-247 | - | 550W (Tc) | -55°C ~ 175°C (TJ) |
|
|
DIF065SIC020SIC MOSFET, TO-247-4L, N, 150A, |
3,219 |
|
Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 150A (Tc) | 18V | 20mOhm @ 75A, 18V | Through Hole | 4V @ 22mA | 236 nC @ 20 V | 650 V | +18V, -5V | 7169 pF @ 400 V | - | - | TO-247-4 | - | 550W (Tc) | -55°C ~ 175°C (TJ) |
|
|
DMWSH120H28SM3QSIC MOSFET BVDSS: >1000V TO247 T |
3,292 |
|
- |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 97.4A (Tc) | 15V | 28.5mOhm @ 50A, 15V | Through Hole | 3.6V @ 17.7mA | 175 nC @ 15 V | 1200 V | +19V, -8V | 3905 pF @ 1000 V | AEC-Q101 | - | TO-247 | Automotive | 405W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IMBG65R009M1HXTMA1SILICON CARBIDE MOSFET |
4,803 |
|
Datasheet |
CoolSiC™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 170A (Tc) | 18V | 13.6mOhm @ 97.2A, 18V | Surface Mount | 5.7V @ 32.4mA | 176 nC @ 18 V | 650 V | +23V, -5V | 6054 pF @ 400 V | - | - | PG-TO263-7 | - | 555W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IXTN400N20X4Ultra Junction X4-Class Power |
3,137 |
|
Datasheet |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 340A (Tc) | 10V | 3mOhm @ 100A, 10V | Chassis Mount | 4.5V @ 250µA | 348 nC @ 10 V | 200 V | ±20V | 27700 pF @ 25 V | - | - | SOT-227B - miniBLOC | - | 830W (Tc) | -55°C ~ 175°C (TJ) |
|
|
C3M0032120J1-TRSIC, MOSFET, 32M, 1200V, TO-263- |
2,279 |
|
Datasheet |
C3M™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 68A (Tc) | 15V | 43mOhm @ 41.4A, 15V | Surface Mount | 3.6V @ 11.5mA | 111 nC @ 15 V | 1200 V | +15V, -4V | 3424 pF @ 1000 V | - | - | TO-263-7 | - | 277W (Tc) | -40°C ~ 150°C (TJ) |
|
|
IXTN500N20X4Ultra Junction X4-Class Power |
2,985 |
|
Datasheet |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500A (Tc) | 10V | 1.99mOhm @ 100A, 10V | Chassis Mount | 4.5V @ 250µA | 535 nC @ 10 V | 200 V | ±20V | 41500 pF @ 25 V | - | - | SOT-227B - miniBLOC | - | 1150W (Tc) | -55°C ~ 175°C (TJ) |
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