| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Part Status | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Power - Max | Mounting Style | Switching Energy | Input Type | Current - Collector (Ic) (Max) | Gate Charge | Td (on/off) @ 25°C | Qualification | Test Condition | Supplier Device Package | Grade | Reverse Recovery Time (trr) | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
APT25GP120BDQ1GIGBT PT 1200V 69A TO247 Microchip Technology |
2,773 |
|
Datasheet |
POWER MOS 7® | TO-247-3 | Tube | Active | PT | 1200 V | 90 A | 3.9V @ 15V, 25A | 417 W | Through Hole | 500µJ (on), 440µJ (off) | Standard | 69 A | 110 nC | 12ns/70ns | - | 600V, 25A, 5Ohm, 15V | TO-247 [B] | - | - | -55°C ~ 150°C (TJ) |
|
|
APT64GA90LD30IGBT PT 900V 117A TO264 Microchip Technology |
4,990 |
|
Datasheet |
POWER MOS 8™ | TO-264-3, TO-264AA | Tube | Active | PT | 900 V | 193 A | 3.1V @ 15V, 38A | 500 W | Through Hole | 1192µJ (on), 1088µJ (off) | Standard | 117 A | 162 nC | 18ns/131ns | - | 600V, 38A, 4.7Ohm, 15V | TO-264 [L] | - | - | -55°C ~ 150°C (TJ) |
|
|
APT33GF120LRDQ2GIGBT 1200V 64A 357W TO264 Microchip Technology |
4,234 |
|
Datasheet |
- | TO-264-3, TO-264AA | Tube | Obsolete | NPT | 1200 V | 75 A | 3V @ 15V, 25A | 357 W | Through Hole | 1.315mJ (on), 1.515mJ (off) | Standard | 64 A | 170 nC | 14ns/185ns | - | 800V, 25A, 4.3Ohm, 15V | TO-264 [L] | - | - | -55°C ~ 150°C (TJ) |
|
APT50GP60BGIGBT PT 600V 100A TO247 Microchip Technology |
3,606 |
|
Datasheet |
POWER MOS 7® | TO-247-3 | Tube | Active | PT | 600 V | 190 A | 2.7V @ 15V, 50A | 625 W | Through Hole | 465µJ (on), 637µJ (off) | Standard | 100 A | 165 nC | 19ns/83ns | - | 400V, 50A, 5Ohm, 15V | TO-247 [B] | - | - | -55°C ~ 150°C (TJ) |
|
APT40GP60BGIGBT PT 600V 100A TO247 Microchip Technology |
4,181 |
|
Datasheet |
POWER MOS 7® | TO-247-3 | Tube | Active | PT | 600 V | 160 A | 2.7V @ 15V, 40A | 543 W | Through Hole | 385µJ (on), 352µJ (off) | Standard | 100 A | 135 nC | 20ns/64ns | - | 400V, 40A, 5Ohm, 15V | TO-247 [B] | - | - | -55°C ~ 150°C (TJ) |
|
|
APT40GP60B2DQ2GIGBT PT 600V 100A Microchip Technology |
4,401 |
|
Datasheet |
POWER MOS 7® | TO-247-3 Variant | Tube | Active | PT | 600 V | 160 A | 2.7V @ 15V, 40A | 543 W | Through Hole | 385µJ (on), 350µJ (off) | Standard | 100 A | 135 nC | 20ns/64ns | - | 400V, 40A, 5Ohm, 15V | - | - | - | -55°C ~ 150°C (TJ) |
|
|
APT70GR120LIGBT NPT 1200V 160A TO264 Microchip Technology |
4,459 |
|
Datasheet |
- | TO-264-3, TO-264AA | Tube | Active | NPT | 1200 V | 280 A | 3.2V @ 15V, 70A | 961 W | Through Hole | 3.82mJ (on), 2.58mJ (off) | Standard | 160 A | 544 nC | 33ns/278ns | - | 600V, 70A, 4.3Ohm, 15V | TO-264 | - | - | -55°C ~ 150°C (TJ) |
|
APT70GR120B2IGBT NPT 1200V 160A TO247 Microchip Technology |
4,094 |
|
Datasheet |
- | TO-247-3 | Tube | Active | NPT | 1200 V | 280 A | 3.2V @ 15V, 70A | 961 W | Through Hole | 3.82mJ (on), 2.58mJ (off) | Standard | 160 A | 544 nC | 33ns/278ns | - | 600V, 70A, 4.3Ohm, 15V | TO-247 | - | - | -55°C ~ 150°C (TJ) |
|
|
APT50GP60B2DQ2GIGBT PT 600V 150A Microchip Technology |
4,160 |
|
Datasheet |
POWER MOS 7® | TO-247-3 Variant | Tube | Active | PT | 600 V | 190 A | 2.7V @ 15V, 50A | 625 W | Through Hole | 465µJ (on), 635µJ (off) | Standard | 150 A | 165 nC | 19ns/85ns | - | 400V, 50A, 4.3Ohm, 15V | - | - | - | -55°C ~ 150°C (TJ) |
|
APT50GS60BRDQ2GIGBT NPT 600V 93A TO247 Microchip Technology |
3,371 |
|
Datasheet |
Thunderbolt IGBT® | TO-247-3 | Tube | Active | NPT | 600 V | 195 A | 3.15V @ 15V, 50A | 415 W | Through Hole | 755µJ (off) | Standard | 93 A | 235 nC | 16ns/225ns | - | 400V, 40A, 4.7Ohm, 15V | TO-247 [B] | - | 25 ns | -55°C ~ 150°C (TJ) |