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    Single IGBTs

    制造商 Series Package/Case Packaging Product Status IGBT Type Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Current - Collector Pulsed (Icm) Vce(on) (Max) @ Vge, Ic Power - Max Switching Energy Input Type Gate Charge Td (on/off) @ 25°C Test Condition Reverse Recovery Time (trr) Operating Temperature Grade Qualification Mounting Type Supplier Device 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    全部重置
    应用所有
    结果:
    Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status IGBT Type Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Current - Collector Pulsed (Icm) Vce(on) (Max) @ Vge, Ic Power - Max Switching Energy Input Type Gate Charge Td (on/off) @ 25°C Test Condition Reverse Recovery Time (trr) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
    APT85GR120B2

    APT85GR120B2

    IGBT NPT 1200V 170A TMAX

    Microchip Technology

    28
    RFQ
    APT85GR120B2

    Datasheet

    - TO-247-3 Tube Active NPT 1200 V 170 A 340 A 3.2V @ 15V, 85A 962 W 6mJ (on), 3.8mJ (off) Standard 660 nC 43ns/300ns 600V, 85A, 4.3Ohm, 15V - -55°C ~ 150°C (TJ) - - Through Hole T-MAX™
    AFGY160T65SPD-B4

    AFGY160T65SPD-B4

    IGBT TRENCH FS 650V 240A TO247-3

    onsemi

    28
    RFQ
    AFGY160T65SPD-B4

    Datasheet

    - TO-247-3 Tube Active Trench Field Stop 650 V 240 A 480 A 2.05V @ 15V, 160A 882 W 12.4mJ (on), 5.7mJ (off) Standard 245 nC 53ns/98ns 400V, 160A, 5Ohm, 15V 132 ns -55°C ~ 175°C (TJ) Automotive AEC-Q100 Through Hole TO-247-3
    APT50GN120L2DQ2G

    APT50GN120L2DQ2G

    IGBT NPT FIELD STOP 1200V 134A

    Microchip Technology

    35
    RFQ
    APT50GN120L2DQ2G

    Datasheet

    - TO-264-3, TO-264AA Tube Active NPT, Trench Field Stop 1200 V 134 A 150 A 2.1V @ 15V, 50A 543 W 4495µJ (off) Standard 315 nC 28ns/320ns 800V, 50A, 2.2Ohm, 15V - -55°C ~ 150°C (TJ) - - Through Hole -
    IXXR110N65B4H1

    IXXR110N65B4H1

    IGBT 650V 150A 455W ISOPLUS247

    IXYS

    28
    RFQ
    IXXR110N65B4H1

    Datasheet

    GenX4™, XPT™ TO-247-3 Tube Active PT 650 V 150 A 460 A 2.2V @ 15V, 110A 455 W 2.2mJ (on), 1.05mJ (off) Standard 183 nC 38ns/156ns 400V, 55A, 2Ohm, 15V 100 ns -55°C ~ 175°C (TJ) - - Through Hole ISOPLUS247™
    APT65GP60L2DQ2G

    APT65GP60L2DQ2G

    IGBT PT 600V 198A

    Microchip Technology

    13
    RFQ
    APT65GP60L2DQ2G

    Datasheet

    POWER MOS 7® TO-264-3, TO-264AA Tube Active PT 600 V 198 A 250 A 2.7V @ 15V, 65A 833 W 605µJ (on), 895µJ (off) Standard 210 nC 30ns/90ns 400V, 65A, 5Ohm, 15V - -55°C ~ 150°C (TJ) - - Through Hole -
    IXBA16N170AHV

    IXBA16N170AHV

    REVERSE CONDUCTING IGBT

    IXYS

    8
    RFQ
    IXBA16N170AHV

    Datasheet

    BIMOSFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active - 1700 V 16 A 40 A 6V @ 15V, 10A 150 W 2.5mJ (off) Standard 65 nC 15ns/250ns 1360V, 10A, 10Ohm, 15V 25 ns -55°C ~ 150°C (TJ) - - Surface Mount TO-263HV
    IXXK300N60B3

    IXXK300N60B3

    IGBT 600V 550A 2300W TO264

    IXYS

    9
    RFQ
    IXXK300N60B3

    Datasheet

    GenX3™, XPT™ TO-264-3, TO-264AA Tube Active PT 600 V 550 A 1140 A 1.6V @ 15V, 100A 2300 W 3.45mJ (on), 2.86mJ (off) Standard 460 nC 50ns/190ns 400V, 100A, 1Ohm, 15V - -55°C ~ 175°C (TJ) - - Through Hole TO-264 (IXXK)
    STGD4H60DF

    STGD4H60DF

    IGBT TRENCH FS 600V 8A DPAK

    STMicroelectronics

    256
    RFQ
    STGD4H60DF

    Datasheet

    H TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Trench Field Stop 600 V 8 A 16 A 1.95V @ 15V, 3A 75 W 68µJ (on), 45µJ (off) Standard 35 nC 35ns/121ns 400V, 3A, 47Ohm, 15V 73 ns -55°C ~ 175°C (TJ) - - Surface Mount DPAK (TO-252) type C2
    GT20J341,S4X(S

    GT20J341,S4X(S

    DISCRETE IGBT TRANSISTOR TO-220S

    Toshiba Semiconductor and Storage

    75
    RFQ
    GT20J341,S4X(S

    Datasheet

    - TO-220-3 Full Pack Tube Active - 600 V 20 A 80 A 2V @ 15V, 20A 45 W 500µJ (on), 400µJ (off) Standard - 60ns/240ns 300V, 20A, 33Ohm, 15V 90 ns 150°C (TJ) - - Through Hole TO-220SIS
    STGWA30M65DF2AG

    STGWA30M65DF2AG

    AUTOMOTIVE-GRADE TRENCH GATE FIE

    STMicroelectronics

    50
    RFQ
    STGWA30M65DF2AG

    Datasheet

    M TO-247-3 Tube Active Trench Field Stop 650 V 87 A 120 A 2V @ 15V, 30A 441 W 756µJ (on), 1.057mJ (off) Standard 81.6 nC 21.6ns/138ns 400V, 30A, 10Ohm, 15V 151 ns -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247 Long Leads
    GT30J65MRB,S1E

    GT30J65MRB,S1E

    650V SILICON N-CHANNEL IGBT, TO-

    Toshiba Semiconductor and Storage

    64
    RFQ

    -

    - TO-3P-3, SC-65-3 Tube Active - 650 V 60 A - 1.8V @ 15V, 30A 200 W 1.4mJ (on), 220µJ (off) Standard 70 nC 75ns/400ns 400V, 15A, 56Ohm, 15V 200 ns 175°C (TJ) - - Through Hole TO-3P(N)
    STGWA25IH135DF2

    STGWA25IH135DF2

    IGBT TRENCH FS 1.35KV 50A TO247

    STMicroelectronics

    46
    RFQ
    STGWA25IH135DF2

    Datasheet

    IH2 TO-247-3 Tube Active Trench Field Stop 1350 V 50 A 100 A 2.2V @ 15V, 20A 340 W 1mJ (off) Standard 166 nC - 600V, 20A, 10Ohm, 15V - -55°C ~ 175°C (TJ) - - Through Hole TO-247 Long Leads
    RGW40NL65HRBTL

    RGW40NL65HRBTL

    IGBT TRENCH FS 650V 48A TO263L

    Rohm Semiconductor

    1,000
    RFQ
    RGW40NL65HRBTL

    Datasheet

    - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Trench Field Stop 650 V 48 A 80 A 1.9V @ 15V, 20A 144 W 110µJ (on), 160µJ (off) Standard 59 nC 33ns/129ns 400V, 10A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263L
    GT40QR21(STA1,E,D

    GT40QR21(STA1,E,D

    IGBT 1200V 40A TO3P

    Toshiba Semiconductor and Storage

    82
    RFQ
    GT40QR21(STA1,E,D

    Datasheet

    - TO-3P-3, SC-65-3 Tube Active - 1200 V 40 A 80 A 2.7V @ 15V, 40A 230 W -, 290µJ (off) Standard - - 280V, 40A, 10Ohm, 20V 600 ns 175°C (TJ) - - Through Hole TO-3P(N)
    RGW50NL65DHRBTL

    RGW50NL65DHRBTL

    IGBT TRENCH FS 650V 57A TO263L

    Rohm Semiconductor

    1,000
    RFQ
    RGW50NL65DHRBTL

    Datasheet

    - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Trench Field Stop 650 V 57 A 100 A 1.9V @ 15V, 25A 165 W 110µJ (on), 230µJ (off) Standard 73 nC 31ns/119ns 400V, 12.5A, 10Ohm, 15V 71 ns -40°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263L
    RGS50NL65HRBTL

    RGS50NL65HRBTL

    IGBT TRENCH FS 650V 50A TO263L

    Rohm Semiconductor

    1,000
    RFQ
    RGS50NL65HRBTL

    Datasheet

    - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Trench Field Stop 650 V 50 A 75 A 2.1V @ 15V, 25A 206 W 810µJ (on), 650µJ (off) Standard 31 nC 28ns/91ns 400V, 25A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263L
    RGW60NL65DHRBTL

    RGW60NL65DHRBTL

    IGBT TRENCH FS 650V 67A TO263L

    Rohm Semiconductor

    1,000
    RFQ
    RGW60NL65DHRBTL

    Datasheet

    - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Trench Field Stop 650 V 67 A 120 A 1.9V @ 15V, 30A 187 W 180µJ (on), 250µJ (off) Standard 84 nC 34ns/122ns 400V, 15A, 10Ohm, 15V 96 ns -40°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263L
    GT50N322A

    GT50N322A

    IGBT 1000V 50A TO3P

    Toshiba Semiconductor and Storage

    52
    RFQ
    GT50N322A

    Datasheet

    - TO-3P-3, SC-65-3 Tray Active - 1000 V 50 A 120 A 2.8V @ 15V, 60A 156 W - Standard - - - 800 ns 150°C (TJ) - - Through Hole TO-3P(N)
    GT50JR21(STA1,E,S)

    GT50JR21(STA1,E,S)

    PB-F IGBT / TRANSISTOR TO-3PN(OS

    Toshiba Semiconductor and Storage

    37
    RFQ
    GT50JR21(STA1,E,S)

    Datasheet

    - TO-3P-3, SC-65-3 Tube Active - 600 V 50 A 100 A 2V @ 15V, 50A 230 W - Standard - - - - 175°C (TJ) - - Through Hole TO-3P(N)
    APT25GP90BG

    APT25GP90BG

    IGBT PT 900V 72A TO247

    Microchip Technology

    51
    RFQ
    APT25GP90BG

    Datasheet

    POWER MOS 7® TO-247-3 Tube Active PT 900 V 72 A 110 A 3.9V @ 15V, 25A 417 W 370µJ (off) Standard 110 nC 13ns/55ns 600V, 25A, 5Ohm, 15V - -55°C ~ 150°C (TJ) - - Through Hole TO-247 [B]
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