Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IDH04SG60CXKSA2DIODE SIL CARB 600V 4A TO220-2-1 Infineon Technologies |
334 |
|
![]() Datasheet |
CoolSiC™+ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 600 V | 4A | 2.3 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 600 V | 80pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
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IDWD30E120D7XKSA1DIODE GEN PURP 1200V 52A TO247-2 Infineon Technologies |
120 |
|
![]() Datasheet |
- | TO-247-2 | Tube | Active | Standard | 1200 V | 52A | 3 V @ 30 A | Fast Recovery =< 500ns, > 5A (Io) | 135 ns | 20 µA @ 1200 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
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IDWD20E65E7XKSA1HOME APPLIANCES 14 Infineon Technologies |
220 |
|
![]() Datasheet |
- | TO-247-2 | Tube | Active | Standard | 650 V | 42A | 2.1 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 74 ns | 20 µA @ 650 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
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IDWD40E120D7XKSA1DIODE GEN PURP 1200V 67A TO247-2 Infineon Technologies |
210 |
|
![]() Datasheet |
- | TO-247-2 | Tube | Active | Standard | 1200 V | 67A | 3 V @ 40 A | Fast Recovery =< 500ns, > 5A (Io) | 155 ns | 20 µA @ 1200 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
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IDWD30E65E7XKSA1HOME APPLIANCES 14 Infineon Technologies |
193 |
|
![]() Datasheet |
- | TO-247-2 | Tube | Active | Standard | 650 V | 50A | 2.1 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 82 ns | 20 µA @ 650 V | - | - | - | Through Hole | PG-TO247-2-2 | - |
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IDWD50E120D7XKSA1DIODE GEN PURP 1200V 81A TO247-2 Infineon Technologies |
230 |
|
![]() Datasheet |
- | TO-247-2 | Tube | Active | Standard | 1200 V | 81A | 3 V @ 50 A | Fast Recovery =< 500ns, > 5A (Io) | 160 ns | 20 µA @ 1200 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
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IDK08G65C5XTMA2DIODE SIL CARB 650V 8A TO263-2 Infineon Technologies |
959 |
|
![]() Datasheet |
CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.8 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | - | 250pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO263-2 | -55°C ~ 175°C |
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IDWD40E65E7XKSA1HOME APPLIANCES 14 Infineon Technologies |
168 |
|
![]() Datasheet |
- | TO-247-2 | Tube | Active | Standard | 650 V | 50A | 2.1 V @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | 89 ns | 20 µA @ 650 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
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IDWD50E65E7XKSA1DIODE GEN PURP 650V 92A TO247-2 Infineon Technologies |
220 |
|
![]() Datasheet |
- | TO-247-2 | Tube | Active | Standard | 650 V | 92A | 2.1 V @ 50 A | Fast Recovery =< 500ns, > 5A (Io) | 94 ns | 20 µA @ 650 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
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IDWD60E120D7XKSA1DIODE GEN PURP 1200V 94A TO247-2 Infineon Technologies |
192 |
|
![]() Datasheet |
- | TO-247-2 | Tube | Active | Standard | 1200 V | 94A | 3 V @ 60 A | Fast Recovery =< 500ns, > 5A (Io) | 175 ns | 20 µA @ 1200 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |