Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RFN20NS4STLDIODE GEN PURP 430V 20A LPDS Rohm Semiconductor |
883 |
|
![]() Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 430 V | 20A | 1.55 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 10 µA @ 430 V | - | - | - | Surface Mount | LPDS | 150°C |
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RF505TF6SC9DIODE GEN PURP 600V 5A TO220NFM Rohm Semiconductor |
430 |
|
![]() Datasheet |
- | TO-220-2 Full Pack | Tube | Active | Standard | 600 V | 5A | 1.7 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 10 µA @ 600 V | - | - | - | Through Hole | TO-220NFM | 150°C |
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SCS302AJTLLDIODE SIL CARB 650V 2.15A LPTL Rohm Semiconductor |
499 |
|
![]() Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Not For New Designs | SiC (Silicon Carbide) Schottky | 650 V | 2.15A | 1.5 V @ 2.15 A | No Recovery Time > 500mA (Io) | 0 ns | 10.8 µA @ 650 V | 110pF @ 1V, 1MHz | - | - | Surface Mount | LPTL | 175°C (Max) |
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RFN20TJ6SFHGC9DIODE GP 600V 20A TO220ACFP Rohm Semiconductor |
978 |
|
![]() Datasheet |
- | TO-220-2 Full Pack | Tube | Active | Standard | 600 V | 20A | 1.55 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 140 ns | 10 µA @ 600 V | - | Automotive | AEC-Q101 | Through Hole | TO-220ACFP | 150°C |
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RFN20NS3STLDIODE GEN PURP 350V 20A LPDS Rohm Semiconductor |
784 |
|
![]() Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 350 V | 20A | 1.35 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 350 V | - | - | - | Surface Mount | LPDS | 150°C |
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RFS30TZ6SGC13DIODE GEN PURP 650V 30A TO247GE Rohm Semiconductor |
584 |
|
![]() Datasheet |
- | TO-247-2 | Tube | Not For New Designs | Standard | 650 V | 30A | 2.3 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 650 V | - | - | - | Through Hole | TO-247GE | 175°C |
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RFUH20TF6SC9DIODE GEN PURP 600V 20A TO220NFM Rohm Semiconductor |
932 |
|
![]() Datasheet |
- | TO-220-2 Full Pack | Tube | Active | Standard | 600 V | 20A | 2.8 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 600 V | - | - | - | Through Hole | TO-220NFM | 150°C |
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SCS304AJTLLDIODE SIL CARBIDE 650V 4A LPTL Rohm Semiconductor |
974 |
|
![]() Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Not For New Designs | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.5 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 200pF @ 1V, 1MHz | - | - | Surface Mount | LPTL | 175°C (Max) |
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RFV30TG6SGC9DIODE GP 600V 30A TO220ACFP Rohm Semiconductor |
822 |
|
![]() Datasheet |
- | TO-220-2 | Tube | Active | Standard | 600 V | 30A | 2.8 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 10 µA @ 600 V | - | - | - | Through Hole | TO-220ACFP | 150°C |
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SCS308AJTLLDIODE SIL CARBIDE 650V 8A LPTL Rohm Semiconductor |
915 |
|
![]() Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.5 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 400pF @ 1V, 1MHz | - | - | Surface Mount | LPTL | 175°C (Max) |