Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
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MUR460-M3/73DIODE GEN PURP 600V 4A DO201AD Vishay General Semiconductor - Diodes Division |
9,989 |
|
![]() Datasheet |
- | DO-201AD, Axial | Cut Tape (CT) | Active | Standard | 600 V | 4A | 1.28 V @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 10 µA @ 600 V | - | - | - | Through Hole | DO-201AD | -65°C ~ 175°C |
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VS-8EWH02FN-M3DIODE GEN PURP 200V 8A TO252 Vishay General Semiconductor - Diodes Division |
992 |
|
![]() Datasheet |
FRED Pt® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | Standard | 200 V | 8A | 970 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 24 ns | 5 µA @ 200 V | - | - | - | Surface Mount | TO-252AA (DPAK) | -65°C ~ 175°C |
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P600G-E3/54DIODE GEN PURP 400V 6A P600 Vishay General Semiconductor - Diodes Division |
10,454 |
|
![]() Datasheet |
- | P600, Axial | Tape & Reel (TR) | Active | Standard | 400 V | 6A | 900 mV @ 6 A | Standard Recovery >500ns, > 200mA (Io) | 2.5 µs | 5 µA @ 400 V | 150pF @ 4V, 1MHz | - | - | Through Hole | P600 | -50°C ~ 150°C |
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BYW76TAPDIODE AVALANCHE 600V 3A SOD64 Vishay General Semiconductor - Diodes Division |
5,879 |
|
![]() Datasheet |
- | SOD-64, Axial | Cut Tape (CT) | Active | Avalanche | 600 V | 3A | 1.1 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 5 µA @ 600 V | - | - | - | Through Hole | SOD-64 | -55°C ~ 175°C |
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MURS340HE3_A/HDIODE GEN PURP 400V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,641 |
|
![]() Datasheet |
- | DO-214AB, SMC | Tape & Reel (TR) | Active | Standard | 400 V | 3A | 1.28 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 400 V | - | Automotive | AEC-Q101 | Surface Mount | DO-214AB (SMC) | -65°C ~ 175°C |
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1N5627-TAPDIODE AVALANCHE 800V 3A SOD64 Vishay General Semiconductor - Diodes Division |
18,881 |
|
![]() Datasheet |
- | SOD-64, Axial | Cut Tape (CT) | Active | Avalanche | 800 V | 3A | 1 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 7.5 µs | 1 µA @ 200 V | 60pF @ 4V, 1MHz | - | - | Through Hole | SOD-64 | -55°C ~ 175°C |
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VS-MBR745-M3DIODE SCHOTTKY 45V 7.5A TO220AC Vishay General Semiconductor - Diodes Division |
4,905 |
|
![]() Datasheet |
- | TO-220-2 | Tube | Active | Schottky | 45 V | 7.5A | 840 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 45 V | 400pF @ 5V, 1MHz | - | - | Through Hole | TO-220AC | -65°C ~ 150°C |
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VS-6TQ045-M3DIODE SCHOTTKY 45V 6A TO220AC Vishay General Semiconductor - Diodes Division |
4,691 |
|
![]() Datasheet |
- | TO-220-2 | Tube | Active | Schottky | 45 V | 6A | 730 mV @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800 µA @ 45 V | 400pF @ 5V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
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VS-10WQ045FN-M3DIODE SCHOTTKY 45V 10A DPAK Vishay General Semiconductor - Diodes Division |
4,276 |
|
![]() Datasheet |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | Schottky | 45 V | 10A | 800 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 45 V | 760pF @ 5V, 1MHz | - | - | Surface Mount | TO-252AA (DPAK) | -40°C ~ 175°C |
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V10P10-M3/87ADIODE SCHOTTKY 100V 10A TO277A Vishay General Semiconductor - Diodes Division |
3,369 |
|
![]() Datasheet |
eSMP®, TMBS® | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Schottky | 100 V | 10A | 680 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150 µA @ 100 V | - | - | - | Surface Mount | TO-277A (SMPC) | -40°C ~ 150°C |