| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Part Status | Technology | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Current - Average Rectified (Io) | Grade | Qualification | Mounting Style | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
UGS30JHDIODE GEN PURP 600V 30A TO263AB |
808 |
|
Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 600 V | 2 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 1 µA @ 600 V | 128pF @ 4V, 1MHz | 30A | Automotive | AEC-Q101 | Surface Mount | TO-263AB (D2PAK) | -55°C ~ 150°C |
|
VS-EPX3007L-N3DIODE GEN PURP 650V 30A TO247AD |
499 |
|
Datasheet |
- | TO-247-2 | Tube | Active | Standard | 650 V | 2.5 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 30 µA @ 650 V | - | 30A | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
|
IDP18E120XKSA1DIODE GP 1.2KV 31A TO220-2-2 |
423 |
|
Datasheet |
- | TO-220-2 | Tube | Active | Standard | 1200 V | 2.15 V @ 18 A | Fast Recovery =< 500ns, > 200mA (Io) | 195 ns | 100 µA @ 1200 V | - | 31A | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 150°C |
|
S3D10065ADIODE SIL CARB 650V 10A TO220AC |
1,964 |
|
Datasheet |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 621pF @ 0V, 1MHz | 10A | - | - | Through Hole | TO-220AC (TO-220-2) | -55°C ~ 175°C |
|
S3D06065GDIODE SIL CARBIDE 650V 6A D2PAK |
769 |
|
Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 8 µA @ 650 V | 382pF @ 0V, 1MHz | 6A | - | - | Surface Mount | D2PAK | -55°C ~ 175°C |
|
VS-8EWS12S-M3DIODE GEN PURP 1.2KV 8A DPAK |
2,945 |
|
Datasheet |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | Standard | 1200 V | 1.1 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 1200 V | - | 8A | - | - | Surface Mount | TO-252AA (DPAK) | -55°C ~ 150°C |
|
RFNL5TJ6SFHGC9DIODE GEN PURP 600V 5A TO220ACFP |
2,739 |
|
Datasheet |
- | TO-220-2 Full Pack | Tube | Active | Standard | 600 V | 1.3 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 130 ns | 10 µA @ 600 V | - | 5A | Automotive | AEC-Q101 | Through Hole | TO-220ACFP | 150°C |
|
RFUH20NS4STLDIODE GEN PURP 430V 20A LPDS |
944 |
|
Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 430 V | 1.7 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 10 µA @ 430 V | - | 20A | - | - | Surface Mount | LPDS | 150°C |
|
RFN20NS4STLDIODE GEN PURP 430V 20A LPDS |
883 |
|
Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 430 V | 1.55 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 10 µA @ 430 V | - | 20A | - | - | Surface Mount | LPDS | 150°C |
|
DLA20IM800PC-TUBDIODE GEN PURP 800V 20A TO263AA |
1,039 |
|
Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | Standard | 800 V | 1.2 V @ 20 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 800 V | 4pF @ 400V, 1MHz | 20A | - | - | Surface Mount | TO-263AA | -55°C ~ 175°C |
|
RF505TF6SC9DIODE GEN PURP 600V 5A TO220NFM |
430 |
|
Datasheet |
- | TO-220-2 Full Pack | Tube | Active | Standard | 600 V | 1.7 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 10 µA @ 600 V | - | 5A | - | - | Through Hole | TO-220NFM | 150°C |
|
C3D03065EDIODE SIL CARB 650V 11A TO252-2 |
2,356 |
|
Datasheet |
Z-Rec® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.8 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 155pF @ 0V, 1MHz | 11A | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
|
S4D05120ADIODE SIL CARB 1.2KV 5A TO220AC |
853 |
|
Datasheet |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1200 V | 302pF @ 0V, 1MHz | 5A | - | - | Through Hole | TO-220AC (TO-220-2) | -55°C ~ 175°C |
|
STTH12T06DIDIODE GP 600V 12A TO220AC INS |
548 |
|
Datasheet |
- | TO-220-2 Insulated, TO-220AC | Tube | Active | Standard | 600 V | 2.95 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | 20 ns | 20 µA @ 600 V | - | 12A | - | - | Through Hole | TO-220AC ins | -40°C ~ 175°C |
|
VS-E5TX2112S2LHM320A, 1200V, "X" SERIES GEN 5 FRE |
835 |
|
Datasheet |
FRED Pt® G5 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 1200 V | 3.6 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 115 ns | 50 µA @ 1200 V | - | 20A | Automotive | AEC-Q101 | Surface Mount | TO-263AB (D2PAK) | -55°C ~ 175°C |
|
IDP08E65D2XKSA1DIODE GEN PURP 650V 8A TO220-2 |
2 |
|
Datasheet |
- | TO-220-2 | Bulk | Active | Standard | 650 V | 2.3 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 40 ns | 40 µA @ 650 V | - | 8A | - | - | Through Hole | TO-220-2 | -40°C ~ 175°C |
|
STTH30RQ06DYDIODE GEN PURP 600V 30A TO220AC |
998 |
|
Datasheet |
- | TO-220-2 | Tube | Active | Standard | 600 V | 2.95 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 55 ns | 40 µA @ 600 V | - | 30A | Automotive | AEC-Q101 | Through Hole | TO-220AC | -40°C ~ 175°C |
|
DMA10P1200UZ-TRLDIODE GEN PURP 1.2KV 10A TO252AA |
1,673 |
|
Datasheet |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | Standard | 1200 V | 1.55 V @ 10 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 1200 V | 1pF @ 400V, 1MHz | 10A | - | - | Surface Mount | TO-252AA | -55°C ~ 175°C |
|
VS-E4PH6006LHN3DIODE GEN PURP 600V 60A TO247AD |
456 |
|
Datasheet |
FRED Pt® | TO-247-2 | Tube | Active | Standard | 600 V | 2 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 68 ns | 50 µA @ 600 V | - | 60A | Automotive | AEC-Q101 | Through Hole | TO-247AD | -55°C ~ 175°C |
|
VS-3C08ET07T-M3650 V POWER SIC GEN 3 MERGED PIN |
1,934 |
|
Datasheet |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.5 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 45 µA @ 650 V | 340pF @ 1V, 1MHz | 8A | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |