AT45DB161E-SHD-T Datasheet Overview: Features, High-Speed SPI Operation, and Applications

Introduction

TheAT45DB161E-SHD-T is a 16Mbit SPI DataFlashcommonly usedin modern electronic designs and also supports the RapidS serial interface for applications requiring very high speed operation. Ithas dual SRAM buffers, flexible page sizes, and versatile erase/program options for efficient data storage and management, this component is essential in wide variety of digital voice, image, program code, and data storage applications.

In this article, we will provide a complete overview of theAT45DB161E-SHD-T, covering its datasheet details, key features, working principle, application areas, and design considerations.

Key Features of AT45DB161E-SHD-T

Feature 1

Single 2.3V - 3.6V or 2.5V - 3.6V supply

Feature 2

Serial Peripheral Interface (SPI) compatible:Supports SPI modes 0 and 3,Supports RapidS™operation

Feature 3

Continuous read capability through entire array:Up to a maximum of 85 MHz,The low-power reading option can reach up to 15 MHz at most,Clock-to-output time (tV) of 6ns maximum

Feature 4

User configurable page size:Page size can be factory pre-configured for 512 bytes,528 bytes per page (default)

Feature 5

Two fully independent SRAM data buffers (512/528 bytes):Allows receiving data while reprogramming the main memory array

Feature 6

Flexible programming options:Byte/Page Program (1 to 512/528 bytes) directly into main memory,Buffer Write,Buffer to Main Memory Page Program

Feature 7

Flexible erase options:Page Erase (512/528 bytes),Block Erase (4KB),Sector Erase (128KB),Chip Erase (16-Mbits)

Feature 8

Program and Erase Suspend/Resume

Feature 9

Advanced hardware and software data protection features:Individual sector protection,Individual sector lockdown to make any sector permanently read-only

Feature 10

128-byte, One-Time Programmable (OTP) Security Register:64 bytes factory programmed with a unique identifier,64 bytes user programmable

Feature 11

Hardware and software controlled reset options

Feature 12

JEDEC Standard Manufacturer and Device ID Read

Feature 13

Low-power dissipation:400nA Ultra-Deep Power-Down current (typical),3µA Deep Power-Down current (typical),25µA Standby current (typical at 20MHz),11mA Active Read current (typical)

Feature 14

Endurance: 100,000 program/erase cycles per page minimum

Feature 15

Data retention: 20 years

Feature 16

Complies with full industrial temperature range

Feature 17

Green (Pb/Halide-free/RoHS compliant) packaging options:8-lead SOIC (0.150" wide and 0.208" wide),8-pad Ultra-thin DFN (5 x 6 x 0.6mm),9-ball Ultra-thin UBGA (6 x 6 x 0.6mm),Die in Wafer Form

Working Principle

TheAT45DB161E-SHD-T operates byusing a structured storage arrays and dual SRAM buffers are employed to achieve efficient data processing. Its main memory can be configured to either the default 528-byte mode or the binary-compatible 512-byte mode, and it is a programmable storage page.This device offers engineers flexible data management options as it supports multiple erase and programming methods, including page-by-page, block-by-block, sector-by-sector, and full-chip erase.During the reading operation, it provides high-speed continuous array reading through the SPI interface. The clock frequency can reach up to 85 MHz, ensuring fast sequential access and minimizing delays during data transmission.

Overall, the AT45DB161E-SHD-T achieves efficient storage and access through a dual-buffer architecture, flexible page organization, and diverse read/write commands, making it suitable for applications that require frequent updates and high-speed data access.

Applications of AT45DB161E-SHD-T

TheAT45DB161E-SHD-T is widely used in scenarios that require high density, low pin count, low voltage and low power consumption.

• Digital voice storage- voice recorders, voice backup modules
• Image storage - digital cameras, industrial imaging equipment
• Program code storage - embedded systems, firmware storage for single-chip microcontrollers
• Data recording and caching-data collector, industrial controller, intelligent sensor
• EEPROM simulation - using its Read-Modify-Write command, data can be modified byte by byte
• High-speed data stream applications -supporting the RapidS interface, suitable for systems requiring high-speed storage access, such as communication equipment

The design of the dual SRAM buffers enables it to continue receiving data while performing writes.

Datasheet Highlights

Capacity: 16-Mbit (2 MByte) DataFlash

Storage structure: Page-based storage (528 bytes or 512 bytes binary pages)

Interface: SPI compatible

Power supply: Single 2.3 V - 3.6 V or 2.5 V - 3.6 V supply

Packaging: SOIC, TSSOP.

Pin Description：

CS: Chip Select, Low Level is Valid

SCK: Serial Clock Input

SI: Serial Data Input

SO: Serial data output

WP: Write Protection

RESET: Reset

Comparison and Alternatives

When comparing the AT45DB161E-SHD-T with similar components such as AT45DB321E (32Mbit) and AT45DB321E (32Mbit).The AT45DB161E-SHD-T is a 16Mbit SPI DataFlash with dual SRAM buffers, flexible page mode (512B/528B), and diverse erasure mechanisms. It is highly suitable for applications that require frequent read/write operations and high-speed data processing.

If a larger capacity is required while maintaining compatibility in terms of instruction set and features, it is recommended to use the same series' AT45DB321E (32Mbit) or AT45DB642E (64Mbit). These two chips are fully compatible with AT45DB161E, and there is no need to modify the system architecture during the upgrade. They are highly suitable for capacity expansion designs.

Additionally, in scenarios where cost and supply chain are more critical factors, common SPI NOR Flash is also a feasible alternative option. For instance, Winbond W25Q16JV and Macronix MX25L1606E are examples. Although they do not have a dual-buffering mechanism, they are widely used in consumer electronics and general MCU storage fields, and their prices are also more competitive.

For design engineers seeking replacements, Pursuing compatibility and performance can choose AT45DB321EorAT45DB642E.Pursuing cost and versatilitycanSelect W25Q16JVorMX25L1606E.

Design Considerations

1. Operating voltage range: 2.3V ~ 3.6V. It is necessary to ensure the stability of the power supply to avoid data reading and writing errors caused by voltage fluctuations.
2. Supports standard SPI interface and is compatible with most MCUs and SoCs.
3. The memory can be configured as either a 528-byte standard page or a 512-byte binary page, depending on the system software architecture and storage algorithm.
4. Support Buffer1 and Buffer2, which enables alternate reading and writing of data.
5. Support page erasure, block erasure, sector erasure and full erase.
6. During the period when the CS (chip select signal) remains at a low level, a complete instruction sequence can be executed.
7. Operating temperature range: -40°C to +85°C, suitable for industrial environments.

The key considerations include supply voltage, SPI clock frequency, page mode, double buffering mechanism, erasure strategy, and system-level data protection. By leveraging these features, an efficient, reliable, and low-power storage solution can be achieved for various applications such as voice, image, and program storage.

Conclusion

The AT45DB161E-SHD-T remains a reliable and versatile choice fordata storage, voice processing, image buffering, and embedded program storage. With its16Mbit capacity, SPI interface, dual SRAM buffers, and flexible erase/program architecture, it is widely used by engineers and manufacturers across the globe.

If you are looking for authentic AT45DB161E-SHD-T ICs, with stable supply, competitive pricing, and fast delivery, feel free to contact us today. Our team provides datasheets, technical support, and sourcing solutions for your projects.