BUK7K6R2-40EX: High-performance dual-channel N-channel MOSFET

Introduction

BUK7K6R2-40EX is a dual-channel N-channel MOSFET packaged in LFPAK56D, belonging to the BUK7K6 series of Nexperia. It has been certified for automotive use by AEC-Q101, with a drain-source voltage of 40V, a continuous drain current of 40A, and a typical on-resistance of only 5.8 mΩ. It features low power loss, high efficiency, and excellent thermal performance. When the system voltage does not exceed its V₍DSS₎, its low power loss, high efficiency, and excellent thermal performance characteristics make it highly competitive in many fields such as power switch control, power supply for new energy vehicles, and industrial control.
This article will comprehensively describe the characteristics, application examples, working principle, and design precautions of BUK7K6R2-40EX in detail.

Features

• Dual MOSFET
• Q101 compliant
• Repetitive avalanche rated
• Suitable for thermally demanding environments due to 175 °C rating
• True standard level gate with VGS(th) of greater than 1 V at 175 °C

Application

1. 12 V Automotive systems
2. Motors, lamps and solenoid control
3. Transmission control
4. Ultra high performance power switching

Datasheet information

• Source leakage voltage (V₍DSS₎): 40 V.
• Continuous drain current (ID, at 25 °C): 40 A.
• Maximum on-state resistance R₍DS(on)₎: 5.8 mΩ (typical value under conditions of VGS = 10 V and ID = 20 A)
• Gate-source voltage range VGS: ±20 V (maximum).
• Total gate charge QG (typical): Approximately 32.3 nC.
• Input capacitance Ciss: Typical approximately 1657 pF, maximum approximately 2210 pF.
• Power dissipation Pd: 68 W.
• Thermal junction range (Tj): -55 °C to +175 °C.

Pin information

Package type: LFPAK56D (also known as SOT1205, 8-pin)

working principle

The BUK7K6R2-40EX contains two independent N-channel transistors and is a dual-channel N-channel MOSFET. Each channel is composed of a gate, a drain, and a source. Its principle is to apply a forward voltage between the gate and the source, causing the N-type channel to "enhance" conduction, allowing electrons to flow from the source to the drain, achieving current control. When the forward voltage is 0V, the MOSFET is in the off state and does not conduct; when the forward voltage exceeds the threshold voltage, the channel forms and conducts. Moreover, its low R₍DS(on)₎ enables low conduction loss, which helps improve efficiency. The dual-channel packaging is conducive to space saving and reduces the complexity of PCB layout.
Certification for automotive use (AEC-Q101) + high temperature tolerance makes it more reliable in vehicle or industrial environments.
In addition, the BUK7K6R2-40EX has automotive certification (AEC-Q101) and high temperature tolerance, making it more reliable in vehicle or industrial environments. Using TrenchMOS technology, the trench structure reduces channel resistance and enhances current carrying capacity; the two channels within the package can be independently controlled or used in parallel to achieve high power output or dual load driving.
In summary, the BUK7K6R2-40EX realizes switching or linear amplification functions by controlling the drain-source current through the gate voltage. It plays a high-performance switching role in automotive power control, motor driving, and DC-DC converters.

Design Considerations

1. Additional protection or selection of higher voltage levels is required: for situations with voltages higher than 40 V or those with significant voltage surges.
2. Consider thermal management: the conduction resistance will increase with temperature rise.
3. Consider thermal resistance and heat dissipation paths: for scenarios where the PCB has poor heat dissipation or the ambient temperature is high.
4. Pay attention to parameters such as gate drive, switching loss, parasitic capacitance, and parasitic inductance: for applications involving parallel use or high-frequency switching.

Conclusion