Introduction
MT29F2G01ABAGDWB-IT:G is a 2Gbit NAND Flash memory that supports SPI interface. It has an 8-pin U-PDFN package with low pin count, making it suitable for space-constrained embedded or industrial systems. It is suitable for applications in embedded systems, industrial equipment, and scenarios requiring high reliability and durability storage.
Datasheet keys
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Storage density: 2 Gbit (2 G × 1)
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Interface type: SPI (standard/extended SPI)
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Maximum clock frequency: ≈ 133 MHz
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Voltage range (VCC): 2.7 V - 3.6 V
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Package: 8-pin U-PDFN
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Temperature range: -40 °C to +85 °C (industrial grade)
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Durability: 100,000 program/erase cycles (typical)
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Data retention period (unwritten): 10 years (at 85 °C)
Features
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Single-level cell (SLC) technology
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2Gb density
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Organization
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Page size x1: 2176 bytes (2048 + 128 bytes)
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Block size: 64 pages (128K + 8K bytes)
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Plane size: 2Gb (2 planes, 1024 blocks per plane)
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Standard and extended SPI-compatible serial businterface
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Instruction, address on 1 pin; data out on 1, 2, or4 pins
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Instruction on 1 pin; address, data out on 2 or 4pins
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Instruction, address on 1 pin; data in on 1 or 4pins
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User-selectable internal ECC supported– 8 bits/sector
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Array performance
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133 MHz clock frequency (MAX)
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Page read: 25µs (MAX) with on-die ECC disabled;70µs (MAX) with on-die ECC enabled
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Page program: 200µs (TYP) with on-die ECC disabled; 220µs (TYP) with on-die ECC enabled
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Block erase: 2ms (TYP)
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Advanced features
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Read page cache mode
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Read unique ID
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Read parameter page
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Device initialization
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Automatic device initialization after power-up
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Security
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Blocks 7:0 are valid when shipped from factorywith ECC enabled
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Software write protection with lock register
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Hardware write protection to freeze BP bits
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Lock tight to freeze BP bits during one power cycle
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Permanent block lock protection
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OTP Space: 10 pages one-time programmableNAND Flash memory area
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Operating voltage range
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Operating temperature
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Industrial: –40°C to +85°C
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Quality and reliability
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Endurance: 100,000 PROGRAM/ERASE cycles
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Data retention: JESD47H-compliant; see qualification report
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Additional: Uncycled data retention: 10 years24/7 @85°C
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Package
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16-pin SOP, 300 mils (package code: SF)
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8-pin U-PDFN, 8mm x 6mm x 0.65mm (MLP8)(package code: WB)
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24-ball T-PBGA, 05/6mm x 8mm (5 x 5 array)(package code: 12)
Packaging, Pins
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Packaging: U-PDFN-8 (6 × 8 mm) surface mount
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Note: ESD protection, re-etch sensitivity (MSL)
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Attention to signal integrity and layout of power/ground planes during wiring.
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The bottom of the package needs a heat dissipation or grounding pad to ensure complete thermal management and grounding.
Working Principle
1. Storage Array Structure
Inside the chip, it is composed of the NAND Flash standard structure:
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Page = 2048B data + 128B OOB
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Block = 64 Pages Plane = 1024 Blocks
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Full chip 2Gb = 2 Planes
2. SPI Data Access
MT29F2G01ABAGDWB-IT:G uses standard SPI / Dual SPI / Quad SPI access methods.
Read process: Page → Data Register
Data Register → SPI Output
Writing Process:
Write data to the internal Data Register (SPI)
Program Execution: Write the data in the register to the Page
Erase Process:
Issue the BLOCK ERASE command
The Flash will restore all bits of the entire Block to "1"
3. Built-in ECC
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Correct bit errors caused by storage aging
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Improve data reliability
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Extend system lifespan
4. Security and Protection
1) Write Protection
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Software locks the register
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The hardware WP# pin can freeze the BP bit
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Lock Tight: Completely lock within one power-on cycle
2) OTP (One-Time Programmable Area)
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Fixed 10 pages
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Cannot be modified after program writing
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Suitable for writing serial numbers, check codes, etc.
5. Power-on Initialization
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Execute the internal initialization sequence
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Read the parameter page
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Reload the ECC table
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Enter the standby accessible state
Design Considerations
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For use in MCU/Embedded Systems, it is necessary to confirm that the MCU/controller supports the command set of this SPI NAND.
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NAND has block-level management requirements, so the software needs to have Bad Block Management, wear-leveling, and block locking mechanisms.
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For high-reliability requirements (such as industrial, automotive-grade), it is recommended to consider temperature-induced degradation, data retention capability, and the manufacturer's reliability certification report.
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When purchasing, it is necessary to confirm that the complete part number suffix (such as "IT:G") corresponds to the function, version, and package with the design.
Conclusion
MT29F2G01ABAGDWB-IT:G: It performs read, write, and erase operations in the NAND array with a Page/Block structure through the SPI interface. It ensures high reliability of data storage by using built-in ECC and protection mechanisms, and is highly suitable for embedded systems, industrial equipment, and storage scenarios requiring high reliability/longevity (SLC outperforms MLC/QLC).