SBAW56LT1G High-Speed Switching Diode | Dual Common Anode SOT-23 | 70V 200mA

Introduction

The SBAW56LT1G is a dual-channel high-speed switching diode from ON Semi, packaged in SOT-23. It features a maximum reverse voltage of 70V and a rated forward current of 200mA. With fast recovery characteristics and low capacitance design, it is suitable for light-load applications such as MCU interface protection, signal isolation in communication equipment, and power modules. It offers the advantages of small size and high reliability.

Features

• S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC−Q101 Qualified andPPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHSCompliant

Pinout / Schematic

Package: SOT-23 (TO-236-3 / SC-59) dual diode, common anode layout.

Absolute maximum ratings

Not to exceed：

Application

1. High-speed switching (for MCU or RF module)

A signal switching network used for switching signals.

2. Reverse polarity protection

Placed at the input power terminal, it serves as a light-load protection function, preventing the negative pole from being reversed, which could damage the chip.
The dual diode structure can be used as a combination component for differential signals or multi-channel protection.

3. Voltage clamping and surge suppression (Clamping / transient suppression)

Combined with TVS and current-limiting resistors, it is used for preventing transient spikes on power or signal ends in small-power boards.

4. Signal shaping and logic level protection

When connecting I/O or GPIO to external sensors, a clamping circuit is formed through diodes.
To avoid the 3.3V/5V digital ports being impacted by external high voltages, it improves the interface durability.

5. Low-current rectification

Simple rectification for energy harvesting, low-power sensors, and micro conversion circuits.

6. Isolation for the analog switch matrix

As a fast isolation device in the analog signal switching matrix, used in multi-channel signal selectors.
The structure of two diodes with a common anode precisely forms the switching structure of A→B and A→C.

7. MOSFET drive auxiliary circuit

Used as a path for rapid release of gate charge or an auxiliary path for reverse conduction.

8. Small OR-ing logic on the board (Power automatic switching)

An OR-ing of USB power supply + external 5V power supply, combining the two power supplies through diodes to automatically select the higher voltage path.

Design notes

• Working voltage margin: The maximum reverse voltage is 70V. If the system exceeds the product's peak value, a safety margin should be reserved.
• Reverse leakage with temperature increase: IR increases significantly at high temperatures. When used in high-temperature environments, it is necessary to verify whether IR can withstand the highest operating temperature.
• Switching speed and capacitor: For high-speed switching or mixed-signal circuits, Ct and trr can affect signal integrity. It is recommended to conduct experiments and verify on high-speed paths first.
• Packaging/welding process: SOT-23 is commonly used in reflow soldering. Pay attention to the pad design and the reflow temperature curve.

Cross-references

Common alternative components: BAW56, BAW56L, MMBD4148. Before substitution, it is necessary to compare Vr, trr, Ct with power/surge capabilities.

ORDERING INFORMATION

Conclusion

The SBAW56LT1G is a compact and stable dual-channel high-speed switching diode, perfectly suited for modern low-power circuit designs. Its fast recovery characteristic, low capacitance, and robust rating of 70 V / 200 mA make it reliable for applications such as signal switching, protection, clamping, and small current rectification. The SOT-23 package helps optimize PCB layout, making it a practical choice for consumer electronics, communication equipment, and general circuit designs.