Seize the Price Hike Cycle of Storage Chips: A Deep Understanding of the Market Performance and Value of W25Q16JVSSIQ

Since 2025, there has been a significant increase in the global storage chip market, with both mainstream DRAM and NAND flash memory being affected by changes in the supply and demand structure. Not long after the news that Samsung and SK Hynix planned to increase the prices of DRAM for servers and mobile phones by 60%-70% was released, there has been another announcement that storage chips will also increase in price. This time it's NOR Flash. After the first quarter of 2026, the price of NOR Flash will undergo a significant adjustment, with the increase level expected to be better than that of the past few quarters. The predicted increase range is likely to be between 30% and 100%, attracting great attention from the industry.

Get to know W25Q16JVSSIQ

W25Q16JVSSIQ is a 16 Mbit NOR Serial Flash memory chip from Winbond, using SPI / Quad I/O interface, supporting a maximum clock frequency of approximately 133 MHz and a power supply voltage of 2.7 V to 3.6 V. It is suitable for embedded system storage firmware, data, and configuration.

Features

• New Family of SpiFlash Memories
• W25Q16JV: 16M-bit / 2M-byte (2,097,152)
• Standard SPI: CLK, /CS, DI, DO
• Dual SPI: CLK, /CS, IO0, IO1
• Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3
• Software & Hardware Reset(1)
• Highest Performance Serial Flash
• 133MHz Single, Dual/Quad SPI clocks
• 266/532MHz equivalent Dual/Quad SPI
• 66MB/S continuous data transfer rate
• Min. 100K Program-Erase cycles per sector
• More than 20-year data retention
• Efficient "Continuous Read"
• Continuous Read with 8/16/32/64-Byte Wrap
• As few as 8 clocks to address memory
• Allows true XIP (execute in place) operation
• Outperforms X16 Parallel Flash
• Low Power, Wide Temperature Range
• Single 2.7V to 3.6V supply
• -40°C to +85°C operating range
• -40°C to +105°C operating range
• <1µA Power-down (typ.)
• Flexible Architecture with 4KB sectors
• Uniform Sector/Block Erase (4K/32K/64K-Byte)
• Program 1 to 256 byte per programmable page
• Erase/Program Suspend & Resume
• Advanced Security Features
• Software and Hardware Write-Protect
• Power Supply Lock-Down and
• Special OTP protection(2)
• Top/Bottom, Complement array protection
• Individual Block/Sector array protection
• 64-Bit Unique ID for each device
• Discoverable Parameters (SFDP) Register
• 3X256-Bytes Security Registers with OTP locks
• Volatile & Non-volatile Status Register Bits
• Space Efficient Packaging
• 8-pin SOIC 150-mil / 208-mil
• 8-pad USON 2X3mm/4x3-mm
• 8-pad XSON 4x4-mm
• 8-pad WSON 6x5-mm
• 8-ball WLCSP
• Contact Winbond for KGD and other options

Pin configuration

1 :/CS-- I --Chip Select Input
2:DO (IO1) --I/O --Data Output (Data Input Output 1)
3:/WP (IO2)-- I/O --Write Protect Input ( Data Input Output 2)
4: GND-- Ground
5: DI (IO0)-- I/O --Data Input (Data Input Output 0)
6 :CLK-- I-- Serial Clock Input
7:/HOLD or /RESET(IO3) --I/O-- Hold or Reset Input (Data Input Output 3)
8: VCC-- Power Supply

Absolute Maximum Ratings

Using W25Q16JVSSIQ

Working Principle Explanation

W25Q16JVSSIQ communicates with the main controller through SPI/Quad SPI interface and adopts a NOR Flash storage structure. Without losing data during power loss, it enables random reading, writing, and erasing of program codes and data.
1. Internal Storage Structure Principle: W25Q16JVSSIQ belongs to NOR Flash. Reading can be directly accessed by address, while writing and erasing must first perform an erase operation.
2. SPI Communication Workflow: Chip selection - Instruction input - Address stage - Data transmission - Status detection
3. Read/Write/Erase Working Mechanism

• Reading: No erase required. Supports Standard SPI / Dual / Quad SPI, can be directly used for program storage and XIP execution
• Writing: Must first execute Write Enable, can only write bit from 1 to 0
• Erase: Restores the storage unit to a full 1 state, erasure unit is larger

4. Data Not Lost During Power Failure Principle: Flash storage uses floating-gate transistors, data is stored in the form of electric charge. 

Application

• MCU Boot Code Storage
• Firmware Upgrade (OTA)
• Parameter Configuration
• Log Data Saving

The value manifestation of W25Q16JVSSIQ during the price increase cycle

In an environment of rising market prices, W25Q16JVSSIQ possesses several competitive advantages

• High stability: As a mature product series of Winbond, it has stable supply and large-scale production capabilities;
• Significant cost advantage: Compared to large-capacity NAND and DRAM products, its unit capacity cost and total cost remain lower;
• Wide adaptability: It still maintains core application demand in embedded, IoT, automotive, and industrial control fields;
• Elasticity of inventory strategy: It can buffer short-term price fluctuation risks through mass production and inventory control.

Current market trend for storage chips like W25Q16JVSSIQ

Taiwan-based manufacturer Winbond previously stated that the demand for computers and servers has recovered compared to earlier periods, and the price of consumer NOR has also rebounded. Some manufacturers even stated as early as October 2025 that there is a price increase trend for small-capacity NOR Flash products. The overall production capacity of NOR Flash is interlinked. Among them, large-capacity products have a high single-value and consume a large amount of production capacity. When supply becomes scarce, large-capacity products will experience price increases earlier and gradually pass on to small-capacity products. It is expected that NOR Flash will maintain a moderate overall price increase trend throughout 2026.
Moore Research Analyst pointed out that the price increase of NOR Flash by 30% to 100% this time is mainly due to "supply chain congestion results". Currently, global semiconductor capital expenditure is flooding into key products such as HBM (high-bandwidth memory) and DDR5 for AI servers because of their excellent profit margins, absorbing excessive funds and production capacity. However, automotive, industrial control, telecommunications, and consumer electronics do not require the highest-level processes, but the market demand has not disappeared, resulting in a serious structural gap in mature product lines. He emphasized that although DRAM, NAND, and NOR Flash are not the most advanced products, the current price increase is the result of "capacity allocation failure". The storage market is now dominated by "price leadership" - "the higher the price, the better".

Supply chain strategy suggestions

Lock in supply in advance: For commonly used components like W25Q16JVSSIQ, sign contracts for procurement in advance to reduce the risk of price increases;
Inventory control strategy: Establish a reasonable safety inventory to cope with periodic price fluctuations;