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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2N7638-GATRANS SJT 650V 8A TO276 GeneSiC Semiconductor |
2,205 | - |
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Datasheet |
- | TO-276AA | Bulk | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 8A (Tc) (158°C) | - | 170mOhm @ 8A | Surface Mount | - | - | 650 V | - | 720 pF @ 35 V | - | - | TO-276 | - | 200W (Tc) | -55°C ~ 225°C (TJ) |
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2N7637-GATRANS SJT 650V 7A TO257 GeneSiC Semiconductor |
4,161 | - |
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- |
- | TO-257-3 | Bulk | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 7A (Tc) (165°C) | - | 170mOhm @ 7A | Through Hole | - | - | 650 V | - | 720 pF @ 35 V | - | - | TO-257 | - | 80W (Tc) | -55°C ~ 225°C (TJ) |
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GA100JT17-227TRANS SJT 1700V 160A SOT227 GeneSiC Semiconductor |
2,743 | - |
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- |
- | SOT-227-4, miniBLOC | Tube | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 160A (Tc) | - | 10mOhm @ 100A | Chassis Mount | - | - | 1700 V | - | 14400 pF @ 800 V | - | - | SOT-227 | - | 535W (Tc) | -55°C ~ 175°C (TJ) |
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2N7640-GATRANS SJT 650V 16A TO276 GeneSiC Semiconductor |
4,033 | - |
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- |
- | TO-276AA | Bulk | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 16A (Tc) (155°C) | - | 105mOhm @ 16A | Surface Mount | - | - | 650 V | - | 1534 pF @ 35 V | - | - | TO-276 | - | 330W (Tc) | -55°C ~ 225°C (TJ) |
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2N7639-GATRANS SJT 650V 15A TO257 GeneSiC Semiconductor |
3,937 | - |
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Datasheet |
- | TO-257-3 | Bulk | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 15A (Tc) (155°C) | - | 105mOhm @ 15A | Through Hole | - | - | 650 V | - | 1534 pF @ 35 V | - | - | TO-257 | - | 172W (Tc) | -55°C ~ 225°C (TJ) |
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GA50JT06-258TRANS SJT 600V 100A TO258 GeneSiC Semiconductor |
3,435 | - |
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Datasheet |
- | TO-258-3, TO-258AA | Bulk | Active | - | SiC (Silicon Carbide Junction Transistor) | 100A (Tc) | - | 25mOhm @ 50A | Through Hole | - | - | 600 V | - | - | - | - | TO-258 | - | 769W (Tc) | -55°C ~ 225°C (TJ) |
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