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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GA05JT03-46TRANS SJT 300V 9A TO46 GeneSiC Semiconductor |
2,838 | - |
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Datasheet |
- | TO-46-3 | Bulk | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 300 V | 9A (Tc) | - | 240mOhm @ 5A | - | - | - | - | - | 20W (Tc) | -55°C ~ 225°C (TJ) | - | - | Through Hole | TO-46 |
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GA16JT17-247TRANS SJT 1700V 16A TO247AB GeneSiC Semiconductor |
3,175 | - |
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Datasheet |
- | TO-247-3 | Tube | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1700 V | 16A (Tc) (90°C) | - | 110mOhm @ 16A | - | - | - | - | - | 282W (Tc) | 175°C (TJ) | - | - | Through Hole | TO-247AB |
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GA50JT12-247TRANS SJT 1200V 100A TO247AB GeneSiC Semiconductor |
4,178 | - |
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Datasheet |
- | TO-247-3 | Tube | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 100A (Tc) | - | 25mOhm @ 50A | - | - | - | 7209 pF @ 800 V | - | 583W (Tc) | 175°C (TJ) | - | - | Through Hole | TO-247AB |
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GA50JT12-263TRANSISTOR 1200V 100A TO263-7 GeneSiC Semiconductor |
2,867 | - |
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- |
* | - | Tube | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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G2R120MT33J-TR3300V 120M TO-263-7 G2R SIC MOSF GeneSiC Semiconductor |
3,906 | - |
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Datasheet |
LoRing™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 3300 V | 33A (Tc) | 20V | 156mOhm @ 15A, 20V | 3.5V @ 4mA | 130 nC @ 20 V | +20V, -5V | 3009 pF @ 1000 V | - | 366W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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G2R120MT33JSIC MOSFET N-CH TO263-7 GeneSiC Semiconductor |
2,738 | - |
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Datasheet |
G2R™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 3300 V | 35A | 20V | 156mOhm @ 20A, 20V | - | 145 nC @ 20 V | +25V, -10V | 3706 pF @ 1000 V | - | - | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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GA100JT12-227TRANS SJT 1200V 160A SOT227 GeneSiC Semiconductor |
3,148 | - |
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- | SOT-227-4, miniBLOC | Tube | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 160A (Tc) | - | 10mOhm @ 100A | - | - | - | 14400 pF @ 800 V | - | 535W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227 |
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GA50JT17-247TRANS SJT 1700V 100A TO247 GeneSiC Semiconductor |
3,037 | - |
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Datasheet |
- | TO-247-3 | Tube | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1700 V | 100A (Tc) | - | 25mOhm @ 50A | - | - | - | - | - | 583W (Tc) | 175°C (TJ) | - | - | Through Hole | TO-247 |
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2N7636-GATRANS SJT 650V 4A TO276 GeneSiC Semiconductor |
3,011 | - |
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- | TO-276AA | Bulk | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 650 V | 4A (Tc) (165°C) | - | 415mOhm @ 4A | - | - | - | 324 pF @ 35 V | - | 125W (Tc) | -55°C ~ 225°C (TJ) | - | - | Surface Mount | TO-276 |
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2N7635-GATRANS SJT 650V 4A TO257 GeneSiC Semiconductor |
4,065 | - |
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- | TO-257-3 | Bulk | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 650 V | 4A (Tc) (165°C) | - | 415mOhm @ 4A | - | - | - | 324 pF @ 35 V | - | 47W (Tc) | -55°C ~ 225°C (TJ) | - | - | Through Hole | TO-257 |
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