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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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G3F34MT12J-TR1200V 34M TO-263-7 G3F SIC MOSFE GeneSiC Semiconductor |
800 | - |
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- |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 68A (Tc) | 18V | 45mOhm @ 26A, 18V | 4.3V @ 18mA | 104 nC @ 18 V | +22V, -10V | 2418 pF @ 800 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7 |
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G3F25MT06J-TR650V 20M TO-263-7 G3F SIC MOSFET GeneSiC Semiconductor |
800 | - |
|
- |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 108A (Tc) | 15V, 18V | 27.5mOhm @ 35A, 18V | 4.3V @ 15mA | 108 nC @ 18 V | +22V, -10V | 2939 pF @ 400 V | - | 343W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7 |
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G3F34MT12K1200V 34M TO-247-4 G3F SIC MOSFE GeneSiC Semiconductor |
600 | - |
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- |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 63A (Tc) | 18V | 45mOhm @ 26A, 18V | 4.3V @ 18mA | 104 nC @ 18 V | +22V, -10V | 2418 pF @ 800 V | - | 263W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
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G3F25MT06K650V 20M TO-247-4 G3F SIC MOSFET GeneSiC Semiconductor |
595 | - |
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- |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 100A (Tc) | 15V, 18V | 27.5mOhm @ 35A, 18V | 4.3V @ 15mA | 108 nC @ 18 V | +22V, -10V | 2939 pF @ 400 V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
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G3F25MT12J-TR1200V 25M TO-263-7 G3F SIC MOSFE GeneSiC Semiconductor |
800 | - |
|
- |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 87A (Tc) | 18V | 34mOhm @ 34A, 18V | 4.3V @ 24mA | 128 nC @ 18 V | +22V, -10V | 3325 pF @ 800 V | - | 362W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7 |
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G3F25MT12K1200V 25M TO-247-4 G3F SIC MOSFE GeneSiC Semiconductor |
595 | - |
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- |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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G3F20MT12J-TR1200V 20M TO-263-7 G3F SIC MOSFE GeneSiC Semiconductor |
800 | - |
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- |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 108A (Tc) | 18V | 26.5mOhm @ 40A, 18V | 4.3V @ 30mA | 176 nC @ 18 V | +22V, -10V | 4317 pF @ 800 V | - | 448W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7 |
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G3F20MT12K1200V 20M TO-247-4 G3F SIC MOSFE GeneSiC Semiconductor |
595 | - |
|
- |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-247-4 |
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G3F18MT12J-TR1200V 18M TO-263-7 G3F SIC MOSFE GeneSiC Semiconductor |
800 | - |
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- |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 122A (Tc) | 18V | 25mOhm @ 45A, 18V | 4.3V @ 35mA | 212 nC @ 18 V | +22V, -10V | 4962 pF @ 800 V | - | 526W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7 |
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G3F18MT12K1200V 18M TO-247-4 G3F SIC MOSFE GeneSiC Semiconductor |
595 | - |
|
- |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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