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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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G3F45MT06J-TR650V 40M TO-263-7 G3F SIC MOSFET GeneSiC Semiconductor |
800 | - |
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- |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 56A (Tc) | 15V, 18V | 54mOhm @ 20A, 18V | Surface Mount | 4.3V @ 8mA | 55 nC @ 18 V | 650 V | +22V, -10V | 1640 pF @ 400 V | AEC-Q101 | - | TO-263-7 | Automotive | 187W (Tc) | -55°C ~ 175°C (TJ) |
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G3F65MT12J-TR1200V 65M TO-263-7 G3F SIC MOSFE GeneSiC Semiconductor |
800 | - |
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- |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 37A (Tc) | 18V | 86mOhm @ 15A, 18V | Surface Mount | 4.3V @ 10mA | 55 nC @ 18 V | 1200 V | +22V, -10V | 1298 pF @ 800 V | AEC-Q101 | - | TO-263-7 | Automotive | 171W (Tc) | -55°C ~ 175°C (TJ) |
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G3F65MT12K1200V 65M TO-247-4 G3F SIC MOSFE GeneSiC Semiconductor |
600 | - |
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- |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 35A (Tc) | 18V | 86mOhm @ 15A, 18V | Through Hole | 4.3V @ 10mA | 55 nC @ 18 V | 1200 V | +22V, -10V | 1298 pF @ 800 V | AEC-Q101 | - | TO-247-4 | Automotive | 153W (Tc) | -55°C ~ 175°C (TJ) |
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G3F45MT06D650V 40M TO-247-3 G3F SIC MOSFET GeneSiC Semiconductor |
600 | - |
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- |
- | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | - | - | - | Through Hole | - | - | 650 V | - | - | - | - | TO-247-3 | - | - | - |
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G3F33MT06J-TR650V 27M TO-263-7 G3F SIC MOSFET GeneSiC Semiconductor |
800 | - |
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- |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 80A (Tc) | 15V, 18V | 38mOhm @ 26A, 18V | Surface Mount | 4.3V @ 12mA | 81 nC @ 18 V | 650 V | +22V, -10V | 2394 pF @ 400 V | AEC-Q101 | - | TO-263-7 | Automotive | 261W (Tc) | -55°C ~ 175°C (TJ) |
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G3F45MT06K650V 40M TO-247-4 G3F SIC MOSFET GeneSiC Semiconductor |
600 | - |
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- |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 52A (Tc) | 15V, 18V | 54mOhm @ 20A, 18V | Through Hole | 4.3V @ 8mA | 55 nC @ 18 V | 650 V | +22V, -10V | 1640 pF @ 400 V | AEC-Q101 | - | TO-247-4 | Automotive | 167W (Tc) | -55°C ~ 175°C (TJ) |
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G3F40MT12J-TR1200V 40M TO-263-7 G3F SIC MOSFE GeneSiC Semiconductor |
800 | - |
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- |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 59A (Tc) | 18V | 53mOhm @ 20A, 18V | Surface Mount | 4.3V @ 16mA | 86 nC @ 18 V | 1200 V | +22V, -10V | 2023 pF @ 800 V | AEC-Q101 | - | TO-263-7 | Automotive | 270W (Tc) | -55°C ~ 175°C (TJ) |
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G3F40MT12K1200V 40M TO-247-4 G3F SIC MOSFE GeneSiC Semiconductor |
552 | - |
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- |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 55A (Tc) | 18V | 53mOhm @ 20A, 18V | Through Hole | 4.3V @ 16mA | 86 nC @ 18 V | 1200 V | +22V, -10V | 2023 pF @ 800 V | AEC-Q101 | - | TO-247-4 | Automotive | 234W (Tc) | -55°C ~ 175°C (TJ) |
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G3F33MT06K650V 27M TO-247-4 G3F SIC MOSFET GeneSiC Semiconductor |
600 | - |
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- |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 74A (Tc) | 15V, 18V | 38mOhm @ 26A, 18V | Through Hole | 4.3V @ 12mA | 81 nC @ 18 V | 650 V | +22V, -10V | 2394 pF @ 400 V | AEC-Q101 | - | TO-247-4 | Automotive | 227W (Tc) | -55°C ~ 175°C (TJ) |
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G3R40MT12J-TR1200V 40M TO-263-7 G3R SIC MOSFE GeneSiC Semiconductor |
630 | - |
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Datasheet |
G3R™, LoRing™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 66A (Tc) | 15V, 18V | 45mOhm @ 35A, 18V | Surface Mount | 2.7V @ 18mA | 88 nC @ 15 V | 1200 V | +22V, -10V | 2897 pF @ 800 V | - | - | TO-263-7 | - | 330W (Tc) | -55°C ~ 175°C (TJ) |
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