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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BSC200P03LSGP-CHANNEL POWER MOSFET Infineon Technologies |
8,671 | - |
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Datasheet |
OptiMOS™ | 8-PowerTDFN | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 9.9A (Ta), 12.5A (Tc) | 10V | 20mOhm @ 12.5A, 10V | 1V @ 100µA | 48.5 nC @ 10 V | ±25V | 2430 pF @ 15 V | - | 2.5W (Ta), 63W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-6 |
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BSB053N03LPGN-CHANNEL POWER MOSFET Infineon Technologies |
5,000 | - |
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Datasheet |
OptiMOS™ | 3-WDSON | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 17A (Ta), 71A (Tc) | 4.5V, 10V | 5.3mOhm @ 30A, 10V | 2.2V @ 250µA | 29 nC @ 10 V | ±20V | 2700 pF @ 15 V | - | 2.3W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | MG-WDSON-2, CanPAK M™ |
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IPB052N04NGN-CHANNEL POWER MOSFET Infineon Technologies |
1,989 | - |
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Datasheet |
OptiMOS™ 3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 70A (Tc) | 10V | 5.2mOhm @ 70A, 10V | 4V @ 33µA | 42 nC @ 10 V | ±20V | 3300 pF @ 20 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO-263-3-2 |
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BSP179H6327XTSA1MOSFET N-CH 400V 210MA SOT223-4 Infineon Technologies |
4,929 | - |
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Datasheet |
SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 400 V | 210mA (Ta) | 0V, 10V | 18Ohm @ 210mA, 10V | 1V @ 94µA | 6.8 nC @ 5 V | ±20V | 135 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4 |
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BSF885N03LQ3GXUMA1N-CHANNEL POWER MOSFET Infineon Technologies |
240,000 | - |
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* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPP60R950C6XKSA1MOSFET N-CH 600V 4.4A TO220-3 Infineon Technologies |
2,778 | - |
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Datasheet |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 4.4A (Tc) | 10V | 950mOhm @ 1.5A, 10V | 3.5V @ 130µA | 13 nC @ 10 V | ±20V | 280 pF @ 100 V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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BSR302NL6327HTSA1MOSFET N-CH 30V 3.7A SC59 Infineon Technologies |
4,374 | - |
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Datasheet |
OptiMOS™ | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 3.7A (Ta) | 4.5V, 10V | 23mOhm @ 3.7A, 10V | 2V @ 30µA | 6.6 nC @ 5 V | ±20V | 750 pF @ 15 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SC59-3 |
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SPS03N60C3AKMA1MOSFET N-CH 650V 3.2A TO251-3-11 Infineon Technologies |
3,000 | - |
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CoolMOS™ | TO-251-3 Stub Leads, IPAK | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 3.2A (Tc) | 10V | 1.4Ohm @ 2A, 10V | 3.9V @ 135µA | 17 nC @ 10 V | ±20V | 400 pF @ 25 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3-11 |
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IPI80N04S4L04AKSA1MOSFET N-CH 40V 80A TO262-3 Infineon Technologies |
4,525 | - |
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Datasheet |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 4.5V, 10V | 4.3mOhm @ 80A, 10V | 2.2V @ 35µA | 60 nC @ 10 V | +20V, -16V | 4690 pF @ 25 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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BSF110N06NT3GXUMA1N-CHANNEL POWER MOSFET Infineon Technologies |
8,800 | - |
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Datasheet |
OptiMOS™ 3 | DirectFET™ Isometric ST | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 47A (Tc) | 10V | 11mOhm @ 30A, 10V | 4V @ 33µA | 46 nC @ 10 V | ±20V | 3700 pF @ 30 V | - | 38W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | MG-WDSON-2 |
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