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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPP80CN10NGXKSA1PFET, 13A I(D), 100V, 0.08OHM, 1 Infineon Technologies |
5,891 | - |
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Datasheet |
OptiMOS™ 2 | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 13A (Tc) | 10V | 80mOhm @ 13A, 10V | Through Hole | 4V @ 12µA | 11 nC @ 10 V | 100 V | ±20V | 716 pF @ 50 V | - | - | PG-TO220-3-123 | - | 31W (Tc) | -55°C ~ 175°C (TJ) |
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IPD30N06S2L23ATMA1MOSFET N-CH 55V 30A TO252-3 Infineon Technologies |
2,240 | - |
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Datasheet |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 4.5V, 10V | 23mOhm @ 22A, 10V | Surface Mount | 2V @ 50µA | 42 nC @ 10 V | 55 V | ±20V | 1091 pF @ 25 V | - | - | PG-TO252-3-11 | - | 100W (Tc) | -55°C ~ 175°C (TJ) |
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IPS031N03LGAKMA1LV POWER MOS Infineon Technologies |
2,325 | - |
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Datasheet |
OptiMOS™ 3 | TO-251-3 Stub Leads, IPAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 90A (Tc) | 4.5V, 10V | 3.1mOhm @ 30A, 10V | Through Hole | 2.2V @ 250µA | 51 nC @ 10 V | 30 V | ±20V | 5300 pF @ 15 V | - | - | PG-TO251-3-11 | - | 94W (Tc) | -55°C ~ 175°C (TJ) |
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SS07N70AKMA1MOSFET N-CH Infineon Technologies |
3,016 | - |
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- |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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SPP02N60C3XKSA1LOW POWER_LEGACY Infineon Technologies |
2,668 | - |
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Datasheet |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1.8A (Tc) | 10V | 3Ohm @ 1.1A, 10V | Through Hole | 3.9V @ 80µA | 12.5 nC @ 10 V | 600 V | ±20V | 200 pF @ 25 V | - | - | PG-TO220-3-1 | - | 25W (Tc) | -55°C ~ 150°C (TJ) |
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SPB03N60C3ATMA1MOSFET N-CH 650V 3.2A TO263-3 Infineon Technologies |
2,541 | - |
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Datasheet |
CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 3.2A (Tc) | 10V | 1.4Ohm @ 2A, 10V | Surface Mount | 3.9V @ 135µA | 17 nC @ 10 V | 650 V | ±20V | 400 pF @ 25 V | - | - | PG-TO263-3-2 | - | 38W (Tc) | -55°C ~ 150°C (TJ) |
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IRFR3709ZTRRPBFMOSFET N-CH 30V 86A DPAK Infineon Technologies |
3,274 | - |
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Datasheet |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 86A (Tc) | 4.5V, 10V | 6.5mOhm @ 15A, 10V | Surface Mount | 2.25V @ 250µA | 26 nC @ 4.5 V | 30 V | ±20V | 2330 pF @ 15 V | - | - | TO-252AA (DPAK) | - | 79W (Tc) | -55°C ~ 175°C (TJ) |
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IPD06N03LAGN-CHANNEL POWER MOSFET Infineon Technologies |
25,570 | - |
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Datasheet |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 4.5V, 10V | 5.7mOhm @ 30A, 10V | Surface Mount | 2V @ 40µA | 22 nC @ 5 V | 25 V | ±20V | 2653 pF @ 15 V | - | - | PG-TO252-3-11 | - | 83W (Tc) | -55°C ~ 175°C (TJ) |
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IRFR3711TRLPBFMOSFET N-CH 20V 100A DPAK Infineon Technologies |
3,959 | - |
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Datasheet |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 4.5V, 10V | 6.5mOhm @ 15A, 10V | Surface Mount | 3V @ 250µA | 44 nC @ 4.5 V | 20 V | ±20V | 2980 pF @ 10 V | - | - | TO-252AA (DPAK) | - | 2.5W (Ta), 120W (Tc) | -55°C ~ 150°C (TJ) |
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IPB136N08N3GATMA1N-CHANNEL POWER MOSFET Infineon Technologies |
4,000 | - |
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Datasheet |
OptiMOS™ 3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 45A (Tc) | 6V, 10V | 13.9mOhm @ 45A, 10V | Surface Mount | 3.5V @ 33µA | 25 nC @ 10 V | 80 V | ±20V | 1730 pF @ 40 V | - | - | PG-TO263-3 | - | 79W (Tc) | -55°C ~ 175°C (TJ) |
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