制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IPD04N03LB GMOSFET N-CH 30V 50A TO252-3 Infineon Technologies |
1,119 | - |
|
![]() Datasheet |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 4.1mOhm @ 50A, 10V | 2V @ 70µA | 40 nC @ 5 V | ±20V | 5200 pF @ 15 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
![]() |
BUZ31 H3045AMOSFET N-CH 200V 14.5A D2PAK Infineon Technologies |
879 | - |
|
![]() Datasheet |
SIPMOS® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 14.5A (Tc) | 10V | 200mOhm @ 9A, 10V | 4V @ 1mA | - | ±20V | 1120 pF @ 25 V | - | 95W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
![]() |
AUIRFZ44NSTRLMOSFET N-CH 55V 49A D2PAK Infineon Technologies |
800 | - |
|
![]() Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 49A (Tc) | - | 17.5mOhm @ 25A, 10V | 4V @ 250µA | 63 nC @ 10 V | - | 1470 pF @ 25 V | - | 3.8W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
![]() |
BSZ0909LSATMA1MOSFET N-CH 30V 19A/40A TSDSON Infineon Technologies |
4,678 | - |
|
![]() Datasheet |
OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 30 V | 19A (Ta), 40A (Tc) | 4.5V, 10V | 3mOhm @ 20A, 10V | 2V @ 250µA | 26 nC @ 10 V | ±20V | 1700 pF @ 15 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8 FL |
![]() |
IPP80N04S2L03AKSA1MOSFET N-CH 40V 80A TO220-3 Infineon Technologies |
4,375 | - |
|
![]() Datasheet |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 4.5V, 10V | 3.4mOhm @ 80A, 10V | 2V @ 250µA | 213 nC @ 10 V | ±20V | 6000 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
IPI80N04S303AKSA1MOSFET N-CH 40V 80A TO262-3 Infineon Technologies |
3,062 | - |
|
![]() Datasheet |
OptiMOS™ T | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 3.5mOhm @ 80A, 10V | 4V @ 120µA | 110 nC @ 10 V | ±20V | 7300 pF @ 25 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
![]() |
IPW50R399CPFKSA1MOSFET N-CH 560V 9A TO247-3 Infineon Technologies |
4,692 | - |
|
![]() Datasheet |
CoolMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 560 V | 9A (Tc) | 10V | 399mOhm @ 4.9A, 10V | 3.5V @ 330µA | 23 nC @ 10 V | ±20V | 890 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
![]() |
IPA65R225C7XKSA1MOSFET N-CH 650V 7A TO220-FP Infineon Technologies |
3,742 | - |
|
![]() Datasheet |
CoolMOS™ C7 | TO-220-3 Full Pack | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 7A (Tc) | 10V | 225mOhm @ 4.8A, 10V | 4V @ 240µA | 20 nC @ 10 V | ±20V | 996 pF @ 400 V | - | 29W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
![]() |
IRL40B215MOSFET N-CH 40V 120A TO220AB Infineon Technologies |
3,692 | - |
|
![]() Datasheet |
HEXFET®, StrongIRFET™ | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 4.5V, 10V | 2.7mOhm @ 98A, 10V | 2.4V @ 100µA | 84 nC @ 4.5 V | ±20V | 5225 pF @ 25 V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
![]() |
SPP80N03S2L04AKSA1MOSFET N-CH 30V 80A TO220-3 Infineon Technologies |
2,941 | - |
|
![]() Datasheet |
OptiMOS™ | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 4.2mOhm @ 80A, 10V | 2V @ 130µA | 105 nC @ 10 V | ±20V | 3900 pF @ 25 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |