| 制造商 | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Part Status | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Style | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | FET Feature | Supplier Device Package | Grade | Power Dissipation (Max) | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BSC152N10NSFGN-CHANNEL POWER MOSFET Infineon Technologies |
9,249 | - |
|
Datasheet |
OptiMOS™ 2 | 8-PowerTDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 9.4A (Ta), 63A (Tc) | 10V | 15.2mOhm @ 25A, 10V | Surface Mount | 4V @ 72µA | 29 nC @ 10 V | 100 V | ±20V | 1900 pF @ 50 V | - | - | PG-TDSON-8 | - | 114W (Tc) | -55°C ~ 150°C (TJ) |
|
SPP06N60C3XKSA1SPP06N60 - 600V COOLMOS N-CHANNE Infineon Technologies |
3,964 | - |
|
Datasheet |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IPB22N03S4L15ATMA1MOSFET N-CH 30V 22A TO263-3 Infineon Technologies |
3,775 | - |
|
Datasheet |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 22A (Tc) | 4.5V, 10V | 14.6mOhm @ 22A, 10V | Surface Mount | 2.2V @ 10µA | 14 nC @ 10 V | 30 V | ±16V | 980 pF @ 25 V | - | - | PG-TO263-3-2 | - | 31W (Tc) | -55°C ~ 175°C (TJ) |
|
AUIRFN7107TRAUIRFN7107 - 75V-100V N-CHANNEL Infineon Technologies |
8,000 | - |
|
Datasheet |
HEXFET® | 8-PowerTDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 14A (Ta), 75A (Tc) | 10V | 8.5mOhm @ 45A, 10V | Surface Mount | 4V @ 100µA | 77 nC @ 10 V | 75 V | ±20V | 3001 pF @ 25 V | - | - | PQFN (5x6) | - | 4.4W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) |
|
SPP80N03S2-03MOSFET N-CH 30V 80A TO220-3 Infineon Technologies |
3,041 | - |
|
Datasheet |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 10V | 3.4mOhm @ 80A, 10V | Through Hole | 4V @ 250µA | 150 nC @ 10 V | 30 V | ±20V | 7020 pF @ 25 V | - | - | PG-TO220-3-1 | - | 300W (Tc) | -55°C ~ 175°C (TJ) |
|
AUIRF4104MOSFET N-CH 40V 75A TO220 Infineon Technologies |
4,232 | - |
|
Datasheet |
HEXFET® | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75A (Tc) | 10V | 5.5mOhm @ 75A, 10V | Through Hole | 4V @ 250µA | 100 nC @ 10 V | 40 V | ±20V | 3000 pF @ 25 V | - | - | TO-220 | - | 140W (Tc) | -55°C ~ 175°C (TJ) |
|
SPD03N60S5BTMA1MOSFET N-CH 600V 3.2A TO252-3 Infineon Technologies |
3,157 | - |
|
Datasheet |
CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 3.2A (Tc) | 10V | 1.4Ohm @ 2A, 10V | Surface Mount | 5.5V @ 135µA | 16 nC @ 10 V | 600 V | ±20V | 420 pF @ 25 V | - | - | PG-TO252-3-11 | - | 38W (Tc) | -55°C ~ 150°C (TJ) |
|
IRL2505PBFMOSFET N-CH 55V 104A TO220AB Infineon Technologies |
3,901 | - |
|
Datasheet |
HEXFET® | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 104A (Tc) | 4V, 10V | 8mOhm @ 54A, 10V | Through Hole | 2V @ 250µA | 130 nC @ 5 V | 55 V | ±16V | 5000 pF @ 25 V | - | - | TO-220AB | - | 200W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPI100N06S3L-03MOSFET N-CH 55V 100A TO262-3 Infineon Technologies |
4,080 | - |
|
Datasheet |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 5V, 10V | 3mOhm @ 80A, 10V | Through Hole | 2.2V @ 230µA | 550 nC @ 10 V | 55 V | ±16V | 26240 pF @ 25 V | - | - | PG-TO262-3 | - | 300W (Tc) | -55°C ~ 175°C (TJ) |
|
BTS247ZN-CHANNEL POWER MOSFET Infineon Technologies |
12,634 | - |
|
Datasheet |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |





