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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ISCH42N04LM7ATMA1ISCH42N04LM7ATMA1 Infineon Technologies |
3,063 | - |
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Datasheet |
OptiMOS™ 7 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 61A (Ta), 541A (Tc) | 4.5V, 10V | 0.42mOhm @ 50A, 10V | 1.8V @ 130µA | 207 nC @ 10 V | ±20V | 13000 pF @ 20 V | - | 3W (Ta), 234W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TDSON-8 |
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IPL60R199CPAUMA1MOSFET N-CH 600V 16.4A 4VSON Infineon Technologies |
4 | - |
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Datasheet |
CoolMOS™ CP | 4-PowerTSFN | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 16.4A (Tc) | 10V | 199mOhm @ 9.9A, 10V | 3.5V @ 660µA | 32 nC @ 10 V | ±20V | 1520 pF @ 100 V | - | 139W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-VSON-4 |
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IMBG65R260M1HXTMA1SILICON CARBIDE MOSFET PG-TO263- Infineon Technologies |
3,373 | - |
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Datasheet |
CoolSIC™ M1 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 6A (Tc) | 18V | 346mOhm @ 3.6A, 18V | 5.7V @ 1.1mA | 6 nC @ 18 V | +23V, -5V | 201 pF @ 400 V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-12 |
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IPA105N15N3GXKSA1MOSFET N-CH 150V 37A TO220-FP Infineon Technologies |
4,635 | - |
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Datasheet |
OptiMOS™ | TO-220-3 Full Pack | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 150 V | 37A (Tc) | 8V, 10V | 10.5mOhm @ 37A, 10V | 4V @ 160µA | 55 nC @ 10 V | ±20V | 4300 pF @ 75 V | - | 40.5W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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ISC030N12NM6ATMA1OPTIMOS 6 POWER-TRANSISTOR,120V Infineon Technologies |
14 | - |
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Datasheet |
OptiMOS™ 6 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 21A (Ta), 194A (Tc) | 8V, 10V | 3.04mOhm @ 50A, 10V | 3.6V @ 141µA | 74 nC @ 10 V | ±20V | 5500 pF @ 60 V | - | 3W (Ta), 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TSON-8-3 |
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IPF019N12NM6ATMA1TRENCH >=100V Infineon Technologies |
2,550 | - |
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Datasheet |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IMZA65R040M2HXKSA1SILICON CARBIDE MOSFET Infineon Technologies |
2,212 | - |
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Datasheet |
CoolSiC™ Gen 2 | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 46A (Tc) | 15V, 20V | 36mOhm @ 22.9A, 20V | 5.6V @ 4.6mA | 28 nC @ 18 V | +23V, -7V | 997 pF @ 400 V | - | 172W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-8 |
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IPDQ65R029CFD7AXTMA1AUTOMOTIVE_COOLMOS Infineon Technologies |
5 | - |
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Datasheet |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 85A (Tc) | 10V | 29mOhm @ 35.8A, 10V | 4.5V @ 1.79mA | 139 nC @ 10 V | ±20V | 7149 pF @ 400 V | - | 463W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22-1 |
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IPW60R016CM8XKSA1IPW60R016CM8XKSA1 Infineon Technologies |
3,081 | - |
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CoolMOS™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 123A (Tc) | 10V | 16mOhm @ 62.5A, 10V | 4.7V @ 1.48mA | 171 nC @ 10 V | ±20V | 7545 pF @ 400 V | - | 521W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-U06 |
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IPW60R017C7XKSA1HIGH POWER_NEW Infineon Technologies |
2,630 | - |
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Datasheet |
CoolMOS™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 109A (Tc) | 10V | 17mOhm @ 58.2A, 10V | 4V @ 2.91mA | 240 nC @ 10 V | ±20V | 9890 pF @ 400 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-41 |
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