制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IMW65R015M2HXKSA1SILICON CARBIDE MOSFET Infineon Technologies |
2,596 | - |
|
![]() Datasheet |
CoolSiC™ Gen 2 | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 93A (Tc) | 15V, 20V | 13.2mOhm @ 64.2A, 20V | 5.6V @ 13mA | 79 nC @ 18 V | +23V, -7V | 2792 pF @ 400 V | - | 341W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-3-40 |
![]() |
GS66508B-MRGS66508B-MR Infineon Technologies Canada Inc. |
2,183 | - |
|
- |
- | Die | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 6V | 63mOhm @ 9A, 6V | 2.6V @ 7mA | 6.1 nC @ 6 V | +7V, -10V | 242 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Die |
![]() |
IPA70R600P7SXKSA1MOSFET N-CH 700V 8.5A TO220 Infineon Technologies |
2,184 | - |
|
![]() Datasheet |
CoolMOS™ P7 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 8.5A (Tc) | 10V | 600mOhm @ 1.8A, 10V | 3.5V @ 90µA | 10.5 nC @ 10 V | ±16V | 364 pF @ 400 V | - | 25W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-FP |
![]() |
BSC0503NSIATMA1MOSFET N-CH 30V 22A/88A TDSON Infineon Technologies |
3,922 | - |
|
![]() Datasheet |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 22A (Ta), 88A (Tc) | 4.5V, 10V | 3mOhm @ 30A, 10V | 2V @ 250µA | 20 nC @ 10 V | ±20V | 1300 pF @ 15 V | - | 2.5W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-6 |
![]() |
IPA041N04NGXKSA1MOSFET N-CH 40V 70A TO220-FP Infineon Technologies |
10 | - |
|
![]() Datasheet |
OptiMOS™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 70A (Tc) | 10V | 4.1mOhm @ 70A, 10V | 4V @ 45µA | 56 nC @ 10 V | ±20V | 4500 pF @ 20 V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-FP |
![]() |
IPP60R360P7XKSA1MOSFET N-CH 650V 9A TO220-3 Infineon Technologies |
4,489 | - |
|
![]() Datasheet |
CoolMOS™ P7 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 9A (Tc) | 10V | 360mOhm @ 2.7A, 10V | 4V @ 140µA | 13 nC @ 10 V | ±20V | 555 pF @ 400 V | - | 41W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
![]() |
IRFS7540TRLPBFMOSFET N-CH 60V 110A D2PAK Infineon Technologies |
4,993 | - |
|
![]() Datasheet |
HEXFET®, StrongIRFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 110A (Tc) | 6V, 10V | 5.1mOhm @ 65A, 10V | 3.7V @ 100µA | 130 nC @ 10 V | ±20V | 4555 pF @ 25 V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
![]() |
IQE050N08NM5CGSCATMA1OPTIMOS LOWVOLTAGE POWER MOSFET Infineon Technologies |
2,829 | - |
|
![]() Datasheet |
OptiMOS™ 5 | 9-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 16A (Ta), 99A (Tc) | 6V, 10V | 5mOhm @ 20A, 10V | 3.8V @ 49µA | 44 nC @ 10 V | ±20V | 2900 pF @ 40 V | - | 2.5W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-WHTFN-9-1 |
![]() |
IPW95R310PFD7XKSA1MOSFET N-CH 950V 17.5A TO247-3 Infineon Technologies |
3,558 | - |
|
![]() Datasheet |
CoolMOS™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 950 V | 17.5A (Tc) | 10V | 310mOhm @ 10.4A, 10V | 3.5V @ 520µA | 61 nC @ 10 V | ±20V | 1765 pF @ 400 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-41 |
![]() |
IPDD60R150G7XTMA1MOSFET N-CH 600V 16A HDSOP-10 Infineon Technologies |
2,313 | - |
|
![]() Datasheet |
CoolMOS™ G7 | 10-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 16A (Tc) | 10V | 150mOhm @ 5.3A, 10V | 4V @ 260µA | 23 nC @ 10 V | ±20V | 902 pF @ 400 V | - | 95W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-10-1 |